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4 articles for “Full adder”
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Design and Simulation of Low-power, High-speed Effective Area Mux Based One-bit Full Adder Using CMOS Technology
Abstract: Our findings reveal a novel kind of circuit capable of performing both XOR and XNOR operations in parallel. Power dissipation and delay are both greatly reduced in the proposed circuits due to their low output capacitance as well as minimal short-circuit power dissipation. We show six new hybrid 1-bit full-adder (FA) circuits that take use of the XOR-XNOR or XOR/XNOR gates' special full-swing function. Each potential circuit layout has both …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 1, Issue 1, 2023 · pp. 25–33 Read article
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Design and Implementation of High-Speed Low Power Low Area Hybrid One Bit Full Adder Using CMOS Technology
Abstract: In this article, we'll take a look at a new kind of Full Adder (FA) design that mixes traditional Complementary Metal Oxide Semiconductors (CCMOS) with Pass Transistors (PTs) and Transmission Gates (TGs). To analyze the circuit's performance, we used the Mentor Graphics software package. Since all twenty (20) varieties of Full Adder circuits were able to be measured and compared, this research was conducted. When the clock rate of the …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 1, Issue 2, 2023 · pp. 29–39 Read article
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Design and Simulation of Low Power Allow Area High Speed Carry Save Adder using CMOS 16 nm Technology.
Abstract: In this article, we propose a novel 1-bit hybrid full adder circuit that is implemented using eighteen transistors. Simulations are done using the Mentor Graphics Tool 16nm technologies. The performances are evaluated based on their speed, average power consumption, and power-delay product. The essential components of arithmetic units including compressors, comparators, parity checkers, etc. are full adders. Thus, raising the performance of the entire adder will raise the system's performance. …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 1, Issue 2, 2023 · pp. 17–28 Read article
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Spintronic Logic Circuits for Ultrafast Processing
Abstract: Spintronic logic has emerged as one of the most promising post-CMOS paradigms capable of addressing the speed, density, and energy challenges of deeply scaled silicon technologies. By relying on the intrinsic properties of electron spin and magnetization dynamics, spintronic devices—particularly Magnetic Tunnel Junctions (MTJs), Spin-Transfer Torque (STT), and Spin–Orbit Torque (SOT) structures—enable ultrafast, non-volatile data processing with significantly reduced energy consumption. Despite remarkable device-level advancements, circuit- level realization of high-speed, …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 3, Issue 2, 2025 · pp. 35–43 Read article