Search
6 articles for “FinFET technology”
-
A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications
Abstract: This has been complemented by improvements on the new layers that have surpassed the manufactures planar transistor by the new FinFET (Fin Field-Effect Transistor), which enhance modern demands on high performance, small size and low power consumption. This review is for a timely information on the latest development on FinFET technology, such as by curbing leakage currents by 50 percent and enhancing its speed by 30 percent proving that FinFETs …
Published in Journal of Semiconductor Devices and Circuits · Vol. 11, Issue 3, 2024 · pp. 1–12 Read article
-
A Comprehensive Review on FinFet Technology : Advantages, Challenges and Applications
Abstract: New devices and enhanced layers have been developed, specially the FinFET (Fin Field-Effect Transistor) which is considerably superior to the planar transistor because of its ability to meet the new demands of systems for high-performance, low-power, and dimensions reduction. Some of the recent developments in FinFETs mentioned in this review include a reduction of leakage currents by 50% and an enhancement of the speed by 30%; thus, FinFETs remain fundamental …
Published in Journal of Semiconductor Devices and Circuits Read article
-
Current Controlled Oscillator Using FinFET
Abstract: A current-controlled oscillator using 18 nm FinFET technology is proposed in this study which consists of a Current Controlled Differential Difference Current Conveyor (CCDDCC) block to control the current. FinFET technology has better scalability and lower leakage current compared to traditional CMOS, which allows it to surpass the obstacles faced by CMOS-based oscillators. The suggested oscillator is suitable for electronic applications such as Phase-Locked Loop (PLL) systems, radio frequency (RF) …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 3, 2025 · pp. 17–28 Read article
-
RTL-to-GDS Implementation of a High-Speed On-Chip 32:1 Serializer Using Open-Source Tools
Abstract: Exploring the RTL-to-GDS implementation of a high-speed on-chip 32:1 serializer, this study investigates the integration of open-source tools within VLSI design, emphasizing sustainable practices in the semiconductor industry while operating at the nanometer scale. Addressing methodologies for optimizing power consumption and chip area utilization, particularly focusing on efficient use of non-renewable resources. The study is set against the backdrop of advanced 7nm FinFET technology, critical for enabling efficient data transmission …
Published in Journal of VLSI Design Tools and Technology · Vol. 14, Issue 3, 2024 · pp. 1–10 Read article
-
High Performance Multi-Valued Logic (MVL)Gate Design Using FinFET
Abstract: CMOS scaling faces challenges such as leakage, power dissipation, and short channel effects. Multi-Valued Logic (MVL) offers higher information density and reduced interconnections. This work presents a FinFET-based MVL gate design that improves electrostatic control, switching speed, and reliability. Simulation results confirm reduced leakage power and enhanced performance compared to conventional logic. The proposed architecture demonstrates scalability for advanced technology nodes. It also shows potential for low-power applications in portable …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 34–45 Read article
-
Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article