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204 articles for “Circuit analysis”
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Development and Characterization of Rubber Composites using E-Waste Residue as Functional Filler
Abstract: In the present study, residue generated during the recycling of end-of-life printed circuit boards (PCBs) was utilized as a functional filler in natural rubber to fabricate eco-friendly composites using mixing and molding techniques. Chemical analysis of the residue revealed the presence of several metals, including copper, iron, lead, tin, and zinc. The presence of these metals highlights the need for proper recycling and safe management of PCB residues, as their …
Published in Journal of Polymer & Composites · Vol. 14, Issue 3, 2026 · pp. 512–523 Read article
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GDI Logic Implementation of Variable Sized CSLA Architectures Using 45 nm SOI Technology
Abstract: Carry select adder (CSLA) is an efficient adder used in modern processors. But, the CMOS logic implementation at the transistor level makes it complex. The use of smaller transistor size has shrunk the overall design but the transistor count was retained. Hence, in this paper the transistor level implementation of variable sized CSLA architecture is done using gate diffusion input (GDI) logic. This implementation drastically simplifies the CSLA in terms …
Published in Journal of VLSI Design Tools and Technology · Vol. 6, Issue 1, 2016 · pp. 78–88 Read article
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Analysis and Comparison of Space Vector and Sinusoidal PWM Controlled Two Level Inverter Fed 3- Induction Motor
Abstract: The current generation of variable speed drives is typically based around the real-time digital generation of Pulse-Width Modulated (PWM) waveforms using either microprocessors or application-specific integrated circuits in many ways. PWM generation techniques for getting the control of inverters have the major advantages that component drift and tolerance problems associated with earlier analog implementations. Of all the various PWM techniques Sinusoidal and Space vector PWM techniques are more prominent. The …
Published in Trends in Electrical Engineering · Vol. 3, Issue 1, 2013 · pp. 1–11 Read article
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Time Domain Analysis in an On-chip High Speed RLCG Interconnection Network at 0.18 µm Technology
Abstract: In this model, the time domain waveform is evaluated for calculation of delay time, peak time, settling time, damping ratio and natural frequency for a second order RLCG interconnect network. It can also be used for multiple interconnect systems but for higher order systems it is ignored due to accurate analysis. The model is applied to a single resistance-inductance-capacitance-conductance model which can also be extended to multi-interconnect systems to analyze …
Published in Journal of VLSI Design Tools and Technology · Vol. 1, Issue 1-2-3, 2011 · pp. 57–67 Read article
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Design of Low Power Folded Cascode Current Mirror CMOS OTA and Implementation of 2nd Order Gm-C IF Filter with Analysis of S-Parameter
Abstract: This paper deals with design and optimization of a cascode current mirror folded cascode operational transconductance amplifier is done in order to optimize MOS transistor sizing. The design of folded cascode OTA, which works for frequencies that lead to a base band circuit design for RF application, is based on transistor sizing methodology and Simulation results are performed using SPICE software and BSIM3V3 model for CMOS 0.18μm process, show that …
Published in Journal of VLSI Design Tools and Technology · Vol. 3, Issue 2, 2013 · pp. 12–23 Read article
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Design of Universal Coil for Medium Voltage Switchgear
Abstract: In the market, currently multiple ratings of D.C. voltages are available for the auxiliary supply of medium voltage switchgear. There is a wide range of D.C. supplies used in the medium voltage segment like 24 V, 30 V, 48 V, 60 V, 110 V, 125 V and 220 V. Normally the closing coil and tripping coil of a circuit breaker are designed for a specific auxiliary supply voltage which leads …
Published in Recent Trends in Sensor Research & Technology · Vol. 4, Issue 2, 2017 · pp. 26–30 Read article
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Carbon Nanotube Transistor Based Novel Ring Oscillator with Minimum Power Consumption at 32 nm Technology Node
Abstract: In this article an analysis of carbon nanotube field effect transistor based ring oscillator is performed. After analysis it was found that carbon nanotube transistor consumes less power in comparison to silicon transistor. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 51–54 Read article
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Carbon Nanotube Transistor Based Novel Ring Oscillator with Minimum Power Consumption at 32 nm Technology Node
Abstract: In this article an analysis of carbon nanotube field effect transistor based ring oscillator is performed. After analysis it was found that carbon nanotube transistor consumes less power in comparison to silicon transistor. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 51–54 Read article
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Impact analysis of CuSCN in Perovskite (CH3NH3PbI3) Solar Cell as Hole Transport Layer
Abstract: The comprehensive modelling and numerical simulation of perovskite solar cell’s were carried out utilizing perovskite materials such “methyl ammonium lead iodide (MAPbI3, MA= CH3NH3)” with the help of SCAPS tools and measured the measurements like "open-circuit voltage (Voc), fill factor (FF), power conversion efficiency (PCE), and short-circuit current density (Jsc) of the MAPbI3 material used as active layer, respectively.” In the modelled structure of the perovskite solar (Fig 1 as …
Published in Journal of Microcontroller Engineering and Applications · Vol. 10, Issue 1, 2023 · pp. 1–7 Read article
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Current Controlled Oscillator Using FinFET
Abstract: A current-controlled oscillator using 18 nm FinFET technology is proposed in this study which consists of a Current Controlled Differential Difference Current Conveyor (CCDDCC) block to control the current. FinFET technology has better scalability and lower leakage current compared to traditional CMOS, which allows it to surpass the obstacles faced by CMOS-based oscillators. The suggested oscillator is suitable for electronic applications such as Phase-Locked Loop (PLL) systems, radio frequency (RF) …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 3, 2025 · pp. 17–28 Read article
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Deep Learning-Based Thermal Prediction Models for Solid-State Electronic Devices
Abstract: The rapid advancement of solid-state electronic devices in high-performance computing, communication systems, automotive electronics, and renewable energy applications has significantly increased concerns related to thermal management and device reliability. Excessive heat generation in semiconductor devices adversely affects operational efficiency, switching performance, lifespan, and overall system stability. Traditional thermal prediction methods often require complex numerical computations and extensive simulation time, making them less suitable for real-time monitoring and adaptive control applications. …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
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Comparative Analysis of Different SRAM Cells Architecture at 70 nm
Abstract: There are severe constraints which affect the real time operation of SRAM cells. With increasing demand of device scaling, the performance parameters of SRAM cells are affected. Our main purpose is to maintain performance of memory cells in real time operation. Here, we considered three basic parameters stability, leakage current and delay for compression of various SRAM cell architectures. In this paper, we considered conventional 6T, asymmetric 7T, asymmetric 8T …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 33–41 Read article
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Design and Performance Analysis of Full Adder Cell using FinFET Technique at 32nm Technology
Abstract: AbstractIn this paper, discussed is the comparative analysis of complementary MOS (CMOS) and dual gate-FinFET (fin shaped field effect transistor) based full adder cell design. To reduce the average power, average current and maximum current of 1-bit full adder circuit a new high DG-FinFET technique is presented. Use of double-gate FinFET technology provides low leakage and high performance operation. For MOSFET transistor model, a predictive technology model (PTM) BSIM4 and …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 1–8 Read article
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A Comparative Analysis of GSM-Dependent Women Safety Devices in the Market
Abstract: The right to be free from abuse, harassment, and discrimination applies to women. Women may achieve their full potential as individuals and contributors to the workforce, communities, and economies by removing the barriers created by unsafe environments. However, according to the World Health Organisation, one in three (35%) women worldwide have encountered non-partner sexual assault or intimate relationship abuse in their lives. This study defines a Device for Women Safety …
Published in Recent Trends in Sensor Research & Technology · Vol. 10, Issue 1, 2023 · pp. 21–29 Read article
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The Time and Frequency Response of Shielded Transformer Windings
Abstract: A distributed-parameter model is presented for the transient and frequency analysis of power transformers’ windings in the presence of electrostatic shielding, a technique occasionally applied for improving their initial voltage distribution. The s-domain solution takes into account the windings’ circuit parameters with special emphasis on the additional distributed capacitances between the windings’ conductors and the conducting shield which is connected to the windings’ line terminal. The closeness of the resulting …
Published in Journal of Power Electronics and Power Systems · Vol. 4, Issue 2, 2014 · pp. 33–47 Read article
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Impact Analysis of Different Active Layer (CH3NH3PbI3) Thickness Using Cu2O as Hole Transport Layer in Perovskite Solar Cell
Abstract: AbstractThickness of active Layer (CH3NH3PbI3) shows important role in term of stability and efficiency of perovskite solar cells. In this paper the numerical simulation and extensive modeling have been performed on perovskite solar cell using perovskite material such as methyl ammonium lead Iodide (MAPbI3, MA=CH3NH3) at different thickness with the help of SCAPS tool. The electrical properties of the MAPbI3 material used as active layer, have been calculated for different …
Published in Trends in Opto-electro & Optical Communication · Vol. 10, Issue 2, 2020 · pp. 15–20 Read article
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Errors-in-Variables Model for Photovoltaic Cell
Abstract: AbstractThe contribution of solar energy to the world's total energy supply has grown significantly. Energy from the sun is the most abundant and freely available energy on the planet. So, the importance of modelling the photovoltaic cell also increased remarkably. Many models for photovoltaic cell had been proposed since the beginning of the solar energy exploitation. Electronic equivalent circuit models, first-principles models and empirical models are the different modelling techniques …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 3, 2019 · pp. 8–15 Read article
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Design and Simulation of a Transformer Coupled Push-Pull Inverter and Matrix Converter Types Smart Solar Grid System
Abstract: This research paper deals with the design and simulation of facile and robust AC voltage originator using a solar power. PV technology is used for generating DC voltage as solar power is very reliable source. Push-pull inverter is used to convert the DC to AC as well as enhanced the magnitude of single phase signal. Matrix converter is also used to convert the single phase AC to three-phase AC signal. …
Published in Trends in Electrical Engineering · Vol. 9, Issue 1, 2019 · pp. 1–16 Read article
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Audio Amplifier with Improved SNR and high Bass control
Abstract: A class-AB amplifier is analysed and modified. Performance analysis of class-AB amplifiers was conducted, which happens to be the most successful topologies in the audio amplifier segment with regard to fidelity. The manufacturer’s rating of 20dB was increased to 200dB with certain circuit modifications as presented.
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 6, Issue 2, 2018 · pp. 30–32 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 28–34 Read article