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59 articles for “Threshold voltage”
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Investigation and Dependency Analysis of Silicon Film Thickness on Performance of Surrounding Gate MOSFET at Subthreshold Regime
Abstract: The characteristics of cylindrical gate all around MOSFET have been studied in terms of the dependence of various device performance metrics on silicon film thickness (Tsi). In this work, the effect of silicon film thickness on numerous performance metrics like threshold voltage (Vt), On current (Ion), subthreshold leakage current (Ioff), On-Off current ratio (Ion/Ioff) and DIBL of cylindrical GAA are comprehensively evaluated and analysed. It has been observed that cylindrical …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 49–54 Read article
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Power-delay Product Optimal Design of Sequential Circuits Using Carbon Nanotubes
Abstract: This paper presents a power-aware high-performance design of ternary combinational and sequential circuits based on carbon nanotube field effect transistor (CNFET) using ternary logic. Carbon nanotube based field effect transistor (CNFET) are being studied extensively as a possible and promising choice for nanoscale integration and as successor to complementary metal oxide semiconductor (CMOS) devices. Ternary logic circuit has attracted substantial interest due to its simplicity, energy efficiency, and reduced interconnect …
Published in Journal of VLSI Design Tools and Technology · Vol. 3, Issue 3, 2013 Read article
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A Survey on Recent Approaches for Leakage Power Reduction in MOS Integrated Circuits
Abstract: Today the integrated circuit’s functionalities are increasing day by day with increase in the number of transistors in it. However, the scaling of the transistors, top increase its number, for the same area of an IC reduces its sub-threshold voltage with its increase in the leakage power consumption. Scaling at different scales (45, 60, 90 nm, etc.) leads to major losses, both at static and dynamic phases of the circuits. …
Published in Journal of VLSI Design Tools and Technology · Vol. 4, Issue 2, 2014 · pp. 24–31 Read article
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Low Power High Speed Eight-Transistor (8T) SRAM Cell with Enhanced Data Stability
Abstract: The demand of static random access memory cell in embedded memories is rapidly increasing. To design SRAM is continuously becoming difficult due to limitation of weaker write margin, degraded data stability and higher leakage power consumption. In order to overcome these limitations, new 8T SRAM has been explored. The simulation results depicts better data stability, low access delay and decreased leakage power consumption. Alternatively, proposed cell with sleep transistor and …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 35–44 Read article
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Designing and Analysis of a Negative Bias Temperature Instability Sensing Circuit
Abstract: Scale down the size of devices introduce the effect of negative bias temperature instability (NBTI), positive bias temperature instability (PBTI), and hot carrier injection (HCI) in very-large-scale integration (VLSI) chip design and the major concern is to minimize these effects to a nominal value. In the paper, authors focus in minimization of NBTI effect and develop a noble degradation monitoring sensor circuit named SCHIMOS. A comparison is stated between an …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 8, Issue 1, 2020 · pp. 6–11 Read article
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Design and Verification of Low Power High Speed Voltage Level Shifter Based on Pass Transistor Methodology
Abstract: This study explains how a voltage level shifter (LS) can be built using a Wilson current mirror level shifter (WCMLS) with a mirrored output. The proposed fix avoids WCMLS's typical issue of requiring a mirror with a size ratio that is too large. It's a space- and cost-saver. The proposed LS requires less components than its modern versions and uses only tiny components, taking up even less space. The proposed …
Published in Journal of Control & Instrumentation · Vol. 14, Issue 2, 2023 · pp. 30–37 Read article
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A New High Speed Low Power 1 Bit Full Adder
Abstract: This paper proposes a low power, low area and high speed 1-bit full adder compared to earlier 1bit full adder designs. The adder comprises of eight transistors with some modifications over the other existing design, so that it can invariably be used in the device with least nano device dimensions. The proposed design exhibits lower threshold loss and works faithfully in sub-threshold regime with appreciable voltage swing at lower power …
Published in Journal of VLSI Design Tools and Technology · Vol. 3, Issue 1, 2013 · pp. 8–13 Read article
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Design and Implementation of Low Power and Area Efficient Sub Threshold Level Shifter Using 16 nm CMOS Technology
Abstract: An efficient method of modifying subthreshold voltages is proposed here. As an alternative to static power dissipation, the suggested design allows for charging of internal nodes through VDDH. The force of the pull-down mechanism may be increased by connecting a second auxiliary circuit. The transition energy for input frequencies between 1 and 5 MHz is 84 fJ, the propagation delay is 46 ns, the dynamic power dissipation is 0.3 mW, …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 1, Issue 1, 2023 · pp. 16–24 Read article
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IoT-Based Battery Health Monitoring for Electric Vehicles Using Machine Learning
Abstract: With increasing utilization of the Electric Vehicles (EV)s in global scale, battery health management becomes a critical factor which has great impact on vehicle performance, safety and longevity. Battery materials, such as NMC LFP lithium-ion batteries and lithium-ion batteries, degrade over time from charging behaviour, heat stress, discharging voltage profiles and environmental limits. Conventional BMS only offer threshold based health diagnostics and cannot perform accurate degradation prediction. This work presents …
Published in International Journal of Machine Systems and Manufacturing Technology · Vol. 4, Issue 1, 2026 Read article
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Improved Performance Characteristics of a Designed 1050 nm Bottom Emitting MQW VCSEL using Al0.25Ga0.22In0.53As/InP Materials
Abstract: AbstractIn this work, the design and performance characteristics of a bottom emitting Al0.25Ga0.22In0.53As/InP Multi-Quantum Well (MQW) Vertical-Cavity Surface-Emitting Lasers (VCSEL) have been presented for operation at a wavelength of 1050 nm. The transparency carrier density and bandgap energy of the QW and barrier materials are computed. An improved performance of the designed VCSEL has been obtained by selecting a material with high gain and lower transparency carrier density in the …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 3, 2013 · pp. 22–30 Read article
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Improved Unified Power Quality Conditioner Design and Numerical Simulation for Power Quality Improvement
Abstract: Harmonic currents can distort the waveform voltage, resulting in a weak signal. There is also an increase in the number of loads requiring enough sinus tension to function properly. As electronic devices become more power-sensitive, people are becoming increasingly interested in power conditioning solutions. Therefore, if the amount of electricity being generated falls below a certain threshold, some type of compensation must be provided. Unified Power Quality Controller (UPQC) is …
Published in Journal of Microwave Engineering and Technologies Read article
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Improved Unified Power Quality Conditioner Design and Numerical Simulation For Power Quality Improvement
Abstract: Harmonic currents can distort the waveform voltage, resulting in a weak signal. There is also an increase in the number of loads requiring enough sinus tension to function properly. As electronic devices become more power-sensitive, people are becoming increasingly interested in power conditioning solutions. Therefore, if the amount of electricity being generated falls below a certain threshold, some type of compensation must be provided. Unified Power Quality Controller (UPQC) is …
Published in Journal of Microwave Engineering and Technologies · Vol. 8, Issue 3, 2021 · pp. 52–60 Read article
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On a Nanocomposite Metal Oxide Thin-film Transistor with Nanofilm Gate Dielectric Material: Material Chemistry, Sol–Gel Process and Electronic Worthiness
Abstract: ABSTRACT : ILO based MOTFT is fabricated with PBZ gate dielectric. PBZ is formed over doped Si substrate by cheap sol-gel process. Thin film PBZ is analysed with XRD, UV-Vis and AFM. IZO is used as bottom gate to contact TFT. This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent e-mobility 4.5cm2/V/s, with on/off ratio 5x105 and sub-threshold swing 0.35V/decade.
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 6, Issue 3, 2019 · pp. 8–12 Read article
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Memristor Modelling for Common Source Amplifier Using 180 nm Technology
Abstract: The objective of this research paper is on memristor modeling for common source amplifier circuit using cadence virtuoso tool at gpdk 180 nm technology. A memristor is the fourth element count after resistor, inductor and capacitor in fundamental electrical circuits assumption is proposed by Leon Chua, its characteristics is based on already occurred principles of voltages (V), current (I), flux (ᵩ) and charge (q). Ohm’s law states relation voltage to …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 3, 2015 · pp. 45–54 Read article
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Real-Time IR Intensity Measurement and Computation for Systems
Abstract: In contemporary defense mechanisms, infrared (IR) sensing has become a fundamental technology for identifying and neutralizing heat-seeking threats, especially concerning aircraft protection. Conventional IR detection systems, such as single-channel radiometers and basic thermal sensors, frequently face restrictions due to low spatial resolution, sluggish data processing, and inadequate user engagement. These constraints can impede the prompt identification of dangers like missile launches or flare activations, potentially endangering mission safety. Additionally, numerous …
Published in Journal of Microwave Engineering and Technologies · Vol. 12, Issue 3, 2025 · pp. 8–13 Read article
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Distributed Load Shedding in Energy Distribution System with IoT
Abstract: This project is designed to develop a modern power distribution and control system which is a very thoughtful one in reducing unwanted power usage in modern times. It is a microcontroller operated system where we fix a maximum power limit for each consumer. Night time is considered to be the peak time for energy consumption, to be precise from 6pm to 11 pm. Here we program the microcontroller to cut …
Published in Trends in Electrical Engineering · Vol. 14, Issue 2, 2024 · pp. 1–9 Read article
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Design of High-Speed TIQ Comparator for Flash-Type ADC for (WPMOS/LPMOS) > 1
Abstract: Comparator is the circuit that compares an analog signal with the reference signal and produces the binary output based on comparison. A Comparator is the main block in the ADC design as it directly affects the conversion rate of an ADC. Depending on the type and architecture of the comparator, the comparator can have significant impact on the performance of the target application. The speed and resolution of an ADC …
Published in Journal of VLSI Design Tools and Technology · Vol. 4, Issue 2, 2014 · pp. 47–52 Read article
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A Survey on Ultra Low Power Design Techniques for IOT Application
Abstract: AbstractInternet of Things (IOT) is evolving as technology’s megatrend, unlocking new opportunities and questions for the semiconductor industry. IOT sensing and actuation devices essentially should be low cost and also should deliver a complete System on Chip (SOC) solution capable of computation, security and wireless communication at very low power levels. The sub-threshold operation, Radio Frequency (RF) redesign, and extreme optimization techniques can minimize power consumption of IOT devices. This …
Published in Current Trends in Information Technology · Vol. 7, Issue 3, 2017 · pp. 9–16 Read article
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A Circuit Approach for CMOS VLSI Circuit Leakage Power Reduction
Abstract: Despite the fact that scaling CMOS technology boosted speed, leakage currents always remained an issue. The issue has gotten worse as the scaling has gone into the UDSM (ultra-deep-submicron) range. In order for the circuit to function effectively, these unwanted leakage currents must be reduced to a minimum. It is challenging to create these leakage-free nano-scale CMOS circuits. In this work, the issue of leakage power is addressed, which occurs …
Published in Research & Reviews: A Journal of Embedded System & Applications · Vol. 10, Issue 3, 2022 · pp. 7–18 Read article