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32 articles for “short channel effect”
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Suitability of Various Low Power Strategies for SRAM Design: A Survey
Abstract: In very high performance system on chip, static power dissipation plays a dominant role compared to dynamic component and it increases with technology scaling. Scaling of bulk MOSFET faces more and more challenges at 45 nm technology or below by producing short channel effect (SCE) which leads to increase in leakage current. An obstacle with bulk MOSFET at 45 nm or below gate length includes SCE, subthreshold leakage and gate …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 6–13 Read article
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3D Simulation of Multi-Gate Mosfet Analysis for Analog Circuit Design Parameters
Abstract: Chip density and performance improvements of semiconductor devices have been driven by their aggressive scaling. The performance of multi-gate FET for analog applications is explored in this paper. Analog operation of CMOS devices and its parameters are very important for future cutting edge technologies. The multi-gate technology shows excellent scalability and better immunity to short channel effects in MOSFETs. They are being easily assessed for CMOS applications beyond the 45 …
Published in Journal of Semiconductor Devices and Circuits · Vol. 1, Issue 2, 2014 · pp. 1–8 Read article
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Comparative study of Drain current of Symmetric and Asymmetric DGMOSFET with simulation in Silvaco_TCAD Software
Abstract: For nano regime devices the double gate MOSFET is one of the most promising and attractive devices. The main idea of a Double Gate MOSFET is to control the Si channel very efficiently by choosing the Si channel width to be very small and by applying a gate contact to both sides of the channel. This concept helps to suppress short channel effects and leads to higher currents as compared …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 1–13 Read article
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Detailed Study of Working and Applications of FinFET Technology and Its Adaptability in Current Era
Abstract: The CMOS technology is following Moore’s law since almost 25 years. The scaling of CMOS transistor has increased packaging density, speed and decreased power dissipation in the integrated circuits. However, CMOS dimension when scaled to nanometer dimension, many physical barriers arise. In sub-100 nm scale, MOSFET has new variants as SOI implementation and double gate. Keywords: Silicon on insulator (SOI), short channel effect (SCE) [2], buried oxide (BOX)
Published in Journal of VLSI Design Tools and Technology · Vol. 2, Issue 1-2-3, 2012 · pp. 52–58 Read article
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Evaluation of OTA Amplifier Using EEG Signals
Abstract: AbstractOver the last few years, there has been a tremendous exploration in VLSI industries in response to scaling trends towards deep submicron technology. Demand for low power and efficient amplification are rising in day-to-day life. In the process of scaling the CMOS nanometer demand low supply, which is helped to design digital circuit realization at very low power consumption. But it is not valid for analog circuit realization. The related …
Published in Trends in Opto-electro & Optical Communication · Vol. 10, Issue 2, 2020 · pp. 5–14 Read article
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Advanced Mathematical Modelling of Nanoscale Semiconductor Devices for Low-Power Microelectronic Applications
Abstract: With the ongoing scaling down of semiconductor devices, there is an increasing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. As the sizes of semiconductors continue to decrease, there is a growing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. In this work, a common mathematical modelling approach …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 2, 2026 Read article
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FDTD-based Time Domain Analysis of CMOS Gate Driven Interconnects
Abstract: Accurate time domain analysis of CMOS gate driven interconnects is important for the design and analysis of high performance VLSI systems. Conventionally, CMOS driver is approximated as a constant resistance instead of non-linear and time-varying MOS resistance, which causes inaccurate modeling of CMOS driver. This paper presents a new method for FDTD-based transient analysis of CMOS gate driven interconnect line using a generalized model. The generalized model of CMOS inverter …
Published in Journal of Electronic Design Technology · Vol. 5, Issue 1, 2014 · pp. 16–21 Read article
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Short Review on the Probability of Carbon Nanotube Based Nanofluidics in Fluid Mechanics
Abstract: In this short review, author has briefly introduced the subject named as nanofluidics. Also, author has provided a short review on passive (surface-driven) capillary flow related to microfluidics. The effects of channel aspect ratio, surface wettability, liquid viscosity, effective viscosity, centrifugal force, and bend angle, are described to control the passive capillary flow in microfluidic devices and systems. Author has demonstrated the difference between leaky-device and non-leaky device in microfluidics. …
Published in Journal of Microwave Engineering and Technologies · Vol. 7, Issue 3, 2020 · pp. 14–17 Read article
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Intelligent Paradigms in Subsea Connectivity: A Comprehensive Review of Artificial Intelligence in Underwater Communications
Abstract: Underwater wireless communication (UWC) plays a critical role in ocean exploration, environmental monitoring, offshore energy operations, disaster management, and naval defense. However, the underwater environment presents significant communication challenges, including severe signal attenuation, multipath propagation, Doppler effects, limited bandwidth, high latency, and energy constraints. Recent advancements in Artificial Intelligence (AI) and Machine Learning (ML) have emerged as promising solutions to address these limitations and enhance the efficiency, reliability, and adaptability …
Published in Journal of Artificial Intelligence Research & Advances · Vol. 13, Issue 3, 2025 Read article
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Short Review on the Materials for Microfluidics with the Experiments to Record the Surface-Driven Capillary Flow of Dyed Water in Fabricated Microfluidic Device for Bioengineering Applications
Abstract: In this review, dominant features of suitable materials for the fabrication of microfluidic devices are briefly mentioned. Surface modification techniques are useful to vary the flow-speed in microfluidic devices. Surface modification techniques are dependent on the choice of device materials. In this present paper, a single polymeric microfluidic device as sudden expansion microchannel is fabricated by author using maskless lithography, hot embossing lithography and direct bonding technique. Also, the surface-driven …
Published in Recent Trends in Fluid Mechanics · Vol. 7, Issue 3, 2020 · pp. 1–4 Read article
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Performance Analysis of Fully Flexible Organic Humidity Sensor with Top-Contact and Bottom-Contact OTFTs
Abstract: Abstract: Organic field-effect transistor (OFET) based humidity sensors are extensively used nowadays due to their low cost, mechanically flexible and compatibility with lower temperature fabrication techniques that support the plastic substrate based device and circuit applications. This paper investigates the humidity dependence of performance of organic humidity sensor with Top-Contact and Bottom-Contact OTFTs. Subsequently, impact of channel length on sensor performance is analyzed. The humidity sensitivity of organic sensor drain …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 26–34 Read article
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Use of the Visible Spectrum of Light and Light Transmission: A Review
Abstract: Almost everyone uses the internet today, either over a wired or wireless network, to complete their tasks. Everyone, including businesses, organisations, entrepreneurs, and institutions, is concerned about accessing the right information at the right time and place, so internet speed is a significant issue. Then you need technology, a wide range of channels, and quick internet connectivity. According to 1EEE 802.11n specifications, wireless fidelity (Wi-Fi) provides a speed of 150 …
Published in Trends in Opto-electro & Optical Communication · Vol. 12, Issue 3, 2022 · pp. 31–36 Read article