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5 articles for “gate tunnelling”
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A Dual Material Control Gate Tunnel Field Effect Transistor for an Asymmetric Doping at Source and Drain Regions
Abstract: Double-Gate tunnel FET devices, which uses high-κ gate dielectric, are explored using realistic design parameters, showing an ON-current as high as 0.23 mA, a gate voltage of 1.8 V, an OFF-current of not more than 1 fA (neglecting gate leakage), an improved ordinary subthreshold swing of 57 mV/dec, and a lower point slope of 11 mV/dec. A dual material control gate tunnel field effect transistor for an asymmetric doping at …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 3, 2018 · pp. 45–53 Read article
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MOS Capacitor: A Processing Tool
Abstract: In this modern world of technology, life without electronics is unimaginable. We are now living in the age of electronics. It is hard to find an electrical item in your home that does not have electronics part in it. The electronic devices give better efficiency and reliability in terms of power loss, speed and cost; the fundamental component of each Integrated Circuit (IC) chip, namely the MOSFET (metal oxide semiconductor …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 27–32 Read article
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Spintronic Logic Circuits for Ultrafast Processing
Abstract: Spintronic logic has emerged as one of the most promising post-CMOS paradigms capable of addressing the speed, density, and energy challenges of deeply scaled silicon technologies. By relying on the intrinsic properties of electron spin and magnetization dynamics, spintronic devices—particularly Magnetic Tunnel Junctions (MTJs), Spin-Transfer Torque (STT), and Spin–Orbit Torque (SOT) structures—enable ultrafast, non-volatile data processing with significantly reduced energy consumption. Despite remarkable device-level advancements, circuit- level realization of high-speed, …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 3, Issue 2, 2025 · pp. 35–43 Read article
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A Review on Tunnel Field Effect Transistor for Ambipolar Suppression, Higher ON Current and a Lower Subthreshold Swing
Abstract: Modern IC technology force on the ICs design considering more area optimization and low power techniques. We study herein the effect of hetero gate dielectric materials on the OFF-current (IOFF) and ON-current (ION) of the heterogate (high-k/low-k) tunnel field-effect transistor for which the simulations give significant improvements as compared to single-gate devices using an SiO2 gate dielectric. The ambipolar behavior is suppressed and radio frequency (RF) parameters are enhanced by …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 55–66 Read article
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Influence of Dielectric and Active layer Thickness on MgZnO Thin Film Transistor Electrical Characteristics
Abstract: From last decades, Thin Film Transistors Technology uses low-k dielectric material as an insulator. Insulator thickness plays an important role in device dimension. The insulating layer also known as the gate oxide separates the gate electrode from the channel region of the transistor. If the insulating layer is too thin, there is a greater chance that electrons can tunnel through the oxide layer, leading to leakage current. To mitigate this …
Published in Journal of Polymer & Composites · Vol. 11, Issue 5, 2023 · pp. 17–26 Read article