Search
11 articles for “Wide bandgap”
-
The Comprehensive Study of Gallium Nitride (GaN) Semiconductor Technology
Abstract: Silicon is an important material in the field of semiconductors because of its special qualities. It has good semiconductor properties, is affordable, and can be found easily. However, it is becoming clear that silicon-based devices are reaching their limits in terms of what they can do. As a result, the search of alternative materials has been initiated. Gallium Nitride (GaN) is one such material. GaN is a type of semiconductor …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 2, 2023 · pp. 1–11 Read article
-
Recent Innovations in Semiconductor Materials for Smart Electronic Devices
Abstract: Recent advancements in semiconductor materials have significantly transformed the design, performance, and functionality of smart electronic devices such as smartphones, wearable systems, IoT devices, autonomous systems, and biomedical electronics. With the continuous demand for higher processing speed, lower power consumption, improved thermal stability, and extreme miniaturization, traditional silicon-based semiconductor technology is facing major limitations. As device dimensions shrink to the nanometer scale, challenges such as leakage current, heat dissipation, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 · pp. 1–11 Read article
-
Impact of Semiconductor Material Properties on Device Behavior and Circuit Performance: A Comprehensive Review
Abstract: Semiconductor materials play a fundamental role in determining the performance, efficiency, and reliability of modern electronic devices and circuits. This review presents a comprehensive analysis of how intrinsic and engineered material properties influence device behavior and overall circuit functionality. Key parameters such as bandgap energy, carrier mobility, thermal conductivity, and defect density are examined to understand their direct impact on switching speed, power consumption, and operational stability. The paper explores …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 · pp. 19–26 Read article
-
Advances and Challenges in the Development of High-performance Silicon Carbide (SiC) Power Devices
Abstract: Due to its distinct features, silicon carbide (SiC), a wide-bandgap semiconductor material, has attracted a lot of attention lately. SiC has superior electrical characteristics compared to silicon, making it an attractive material for high-performance power electronic devices. SiC-based devices can operate at higher temperatures, higher voltages, and higher switching frequencies, which can result in increased power density and efficiency. Recent advances in SiC device technology have led to the development …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 3, 2022 · pp. 15–20 Read article
-
Theoretical Study of Surface Waves in Hexagonal Boron Nitride (hBN)
Abstract: Hexagonal boron nitride (hBN) is a wide bandgap semiconductor material in which Boron (B) and Nitrogen (N) atoms form hexagonal structure and has number of robust properties of technological importance. Boron nitride nanotubes (BNNTs) are very nice area of research in recent years. Its structure is similar to carbon nanotubes (CNTs) where carbon atoms are arranged in hexagon. hBN is also known as White Graphene. Various methods are employed to …
Published in Research & Reviews : Journal of Physics · Vol. 13, Issue 1, 2024 Read article
-
The Next Era of Solid-State Innovation: Beyond Silicon
Abstract: The semiconductor industry is getting close to the physical and economic boundaries of silicon-based technology. A new era of solid-state innovation is beginning. Beyond Silicon: The Next Era of Solid-State Innovation looks at the materials, device layouts, and manufacturing methods that are about to change the way electronics and energy work. The article talks about improvements in wide- and ultra-wide-bandgap semiconductors, two- dimensional materials, and quantum and neuromorphic systems that …
Published in International Journal of Solid State Innovations & Research · Vol. 3, Issue 2, 2025 · pp. 19–23 Read article
-
Development and Thermal-Soiling Performance Evaluation of Boron-Nitride Reinforced Polymer Nanocomposite Coatings for Solar Photovoltaic Applications
Abstract: Surface heating, dust buildup, and weakening triggered by ultraviolet (UV) light all have a vast effect on the long-term performance of solar photovoltaic (PV) modules. These issues all lower power conversion efficiency in real-world open-air circumstances. A nanocomposite coating built on fluoropolymer (FEP) that is reinforced with hexagonal boron nitride (h-BN) nanoparticles is invented by this study to enhance thermal dissipation, optical transmission, and resistance to dirt at the same …
Published in Journal of Polymer & Composites · Vol. 14, Issue 2, 2026 · pp. 218–223 Read article
-
Advances in Energy Systems and Solid State Electronics
Abstract: Solid state technology has become a game changer in the field of modern electronics and energy systems providing faster, safer and more energy efficient solutions for several industries. The performance and dependability of electronic systems have been considerably improved by recent advances in solid state materials, semiconductor devices, and energy storage technologies. Progress in solid-state batteries, wide-bandgap semiconductors, and next-generation integrated circuits is transforming applications in electric vehicles, renewable energy …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
-
Influence of SiO2 Nanoparticles on the Structural, Morphological, and Optical Properties of CsPbBr3 Quantum Dots
Abstract: This work mainly investigates the structural and optical property differences between CsPbBr3/SiO2 quantum dots (QDs) and CsPbBr3 QDs thin films deposited on fluorine-doped tin oxide (FTO) glass. X-ray diffraction of CsPbBr3/SiO2 QD thin film showed a polycrystalline cubic nanostructure with (200) as a dominant phase and did not show any peak of SiO2. Scanning and transmission electron microscopy images show that it is very small spherical or semi-spherical particles with …
Published in Journal of Polymer & Composites · Vol. 11, Issue 2, 2023 · pp. 62–69 Read article
-
Comparison of 11-Atom Armchair Graphene Nanoribbons and Zig-Zag Carbon Nanotubes in Polymer Composites Under Various Bias Voltages: A Study of Electronic and Transmission Properties
Abstract: In this research, 11-atom zig-zag carbon nanotubes (ZCNTs) and 11-atom armchair graphene nanoribbons (AGNRs) were studied under applied bias voltages at 50, 150, and 300 millivolt levels. The focus was on understanding their behaviour concerning transmission qualities, current-voltage (I-V) characteristics, and energy-momentum (E-K) diagrams. The Non-Equilibrium Green's Function (NEGF) approach was employed to analyse various electronic properties for ZCNTs and AGNRs, including transmission, E-K relationships, and I-V characteristics. The results …
Published in Journal of Polymer & Composites · Vol. 13, Issue 2, 2025 · pp. 126–134 Read article
-
Structural, Morphological, Optical, and Electrical Properties of Sol–Gel Synthesized Bismuth Ferrite Nanoparticles for Photovoltaic Applications
Abstract: Solar cells are a promising renewable energy source, converting solar energy into electrical power. The performance and efficiency of solar cells can be enhanced by incorporating multiferroic materials, which have the potential to improve energy conversion. Bismuth ferrite (BFO) is one such material that has attracted attention for photovoltaic applications due to its bandgap energy, which ranges from 2 eV to 2.7 eV. However, its practical efficiency is currently low …
Published in Journal of Materials & Metallurgical Engineering · Vol. 16, Issue 2, 2026 · pp. 28–41 Read article