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43 articles for “Semiconductor device model”
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Nonlinear Semiconductor Device Modeling using Neural Networks
Abstract: This paper describes the nonlinear semiconductor (transistor) of small and large signal modeling using a single neural network. Multilayer perceptron (MLP) with back-propagation (BP) learning is adopted in this work to model the drain current (ID) and the transconductance (gm) of the transistor. MLP modeling performance in terms of mean square error (MSE) and complexity of the network are illustrated briefly. Artificial neural network (ANN) model outcome for nonlinear function …
Published in Journal of VLSI Design Tools and Technology · Vol. 4, Issue 3, 2014 · pp. 1–6 Read article
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Transient Analysis of Electronic Circuits Including Zener Diodes
Abstract: This paper addresses the transient analysis of the electronic circuits incorporating Zener diodes. It starts with suggesting a new Zener diode model. The model is based on efficiently utilized step functions of the applied voltage. It includes also the diode’s main technical parameters such as its resistances in both the forward and reverse current directions as well as its Zener’s breakdown voltage. The sharp discontinuities of the step-functions are dealt …
Published in Journal of VLSI Design Tools and Technology · Vol. 11, Issue 3, 2021 · pp. 1–9 Read article
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Mathematical Modelling of Semiconductor Device Physics: An Analytical Approach
Abstract: Semiconductor device physics forms the foundation of modern electronic and optoelectronic technologies. Mathematical modelling provides a rigorous framework for understanding, predicting, and optimizing the behavior of semiconductor devices by linking physical principles with device-level performance. This work presents an analytical approach to the mathematical modelling of semiconductor devices, emphasizing the derivation and interpretation of governing equations that describe charge transport and electrostatic behavior. The model is based on fundamental physical …
Published in Research & Reviews: Discrete Mathematical Structures · Vol. 13, Issue 1, 2026 · pp. 36–42 Read article
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Advanced Mathematical Modelling of Nanoscale Semiconductor Devices for Low-Power Microelectronic Applications
Abstract: With the ongoing scaling down of semiconductor devices, there is an increasing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. As the sizes of semiconductors continue to decrease, there is a growing need for accurate mathematical models of electrostatic control, carrier transport, leakage current, and power consumption at the nanometer scale. In this work, a common mathematical modelling approach …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 2, 2026 Read article
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Novel Technique for the Analysis of Electronic Circuits Including Zener Diodes
Abstract: This paper addresses the analysis of electronic circuits including Zener diodes. It starts with a modified Zener diode model, which is based on expressions involving step-functions, its parameters such as the resistances in both current directions as well as its breakdown (or Zener) voltage. In contrast to the earlier approaches expressing the sharp discontinuities characterizing the step-functions in terms of inverse hyperbolic tangent terms, this paper adopts more concise and …
Published in Journal of VLSI Design Tools and Technology · Vol. 11, Issue 3, 2021 · pp. 31–41 Read article
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Analysis of Six-Pulse Bridge Circuits Including Zener and Semiconductor Diodes – Part Two
Abstract: The present study offers a generic method for simulating and modelling six-pulse rectifier bridge circuits in the time domain. These circuits can include Zener and/or semi-conductor type diodes or even a mixture of them. The governing system of simultaneous algebraic and differential equations are listed and solved numerically using a computer code written in Mathematica. The flexibly written program can handle voltage sources of any time waveform, frequency or internal …
Published in Journal of VLSI Design Tools and Technology · Vol. 12, Issue 2, 2022 · pp. 13–21 Read article
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Unified Mathematical Framework for Semiconductor Devices, Junction Dynamics, and Circuit Analysis
Abstract: Semiconductor devices form the fundamental building blocks of modern electronic and integrated circuit systems, where their electrical behavior is governed by coupled carrier transport, electrostatic, and circuit-level phenomena. This work presents a unified mathematical framework for modeling semiconductor devices, junction dynamics, and their interaction with electronic circuits. The formulation integrates fundamental semiconductor relations, carrier concentration, drift–diffusion transport, Poisson’s equation, continuity equations, PN-junction behavior, diode characteristics, bipolar junction transistor operation, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 · pp. 37–47 Read article
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Analysis of Six-Pulse Bridge Circuits Including Zener and Semiconductor Diodes Part One
Abstract: This paper addresses the analysis of electronic bridge circuits including Zener and/or semiconductor diodes. The analysis is based on recently suggested models for these diodes. A compact Mathematica code written in the Versions 7.0, 11.3 and 12.2 simulating a six-pulse rectifier bridge circuit is then derived and mathematically implemented. It investigates the time-domain transient and steady-state analysis of several representative case studies. In principle, the computer simulation can yield the …
Published in Journal of VLSI Design Tools and Technology · Vol. 12, Issue 1, 2022 · pp. 14–22 Read article
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A Review of Semiconductor Solar PV Cell and Development of Solar Radiation Estimation Models
Abstract: Today’s life could not be imagined without energy (Power). It has become an integral part of day to day life. Traditionally, dependency was there on conventional sources of energy like coal, hydroelectric etc. But they are limited resources; also, they offer residue or pollution to the environment which is not desirable. These are the main reasons that the researchers inclined themselves towards the maximum exploration and make optimal use of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 20–26 Read article
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Fabrication, Numerical Simulation and Compact Modeling of Ph-BTBT-C10 Organic Thin Film Transistor
Abstract: Flexible and cost-effective electronics have been necessitated by the advent of organic thin-film transistors (OTFTs). This study aims to study the performance of OTFT using a 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10) organic semiconductor. The paper also explore accurate device modeling for technology optimization and circuit design that supports device improvement. This research includes device fabrication, numerical simulation using TCAD, compact modeling, and parameter extraction. By combining temperature-dependent bandgap narrowing with existing theories, this …
Published in Journal of Polymer & Composites · Vol. 12, Issue 5, 2024 · pp. 1–18 Read article
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Deep Learning-Based Thermal Prediction Models for Solid-State Electronic Devices
Abstract: The rapid advancement of solid-state electronic devices in high-performance computing, communication systems, automotive electronics, and renewable energy applications has significantly increased concerns related to thermal management and device reliability. Excessive heat generation in semiconductor devices adversely affects operational efficiency, switching performance, lifespan, and overall system stability. Traditional thermal prediction methods often require complex numerical computations and extensive simulation time, making them less suitable for real-time monitoring and adaptive control applications. …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
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Computational Modeling of Polymer Semiconductors for Electronic Applications
Abstract: Polymer semiconductors have become important materials in modern electronic applications because they combine semiconducting behavior with mechanical flexibility, low-cost processing, and tunable molecular structure. Their growing use in organic field-effect transistors, organic photovoltaics, organic light-emitting diodes, and flexible sensing devices has increased the need for accurate computational approaches that can predict material properties and device performance before experimental fabrication. This paper reviews the major computational modeling techniques used for polymer …
Published in Journal of Polymer & Composites · Vol. 14, Issue 3, 2026 · pp. 132–146 Read article
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SPICE Modeling of LDMOSFET Transistor
Abstract: AbstractHigh voltage integrated circuits, these days are the most viable alternatives to discrete circuits for various applications. The popular amongst them is the lateral double diffused MOS transistor (LDMOS). It is based on the lightly doped drain (LDD) concept. The constraint that occurred in modeling LDMOS is to minimize the on-resistance along with maintaining a high breakdown voltage. To achieve the objective, the help of RESURF (Reduced Surface Field) concept …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 42–57 Read article
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Errors-in-Variables Model for Photovoltaic Cell
Abstract: AbstractThe contribution of solar energy to the world's total energy supply has grown significantly. Energy from the sun is the most abundant and freely available energy on the planet. So, the importance of modelling the photovoltaic cell also increased remarkably. Many models for photovoltaic cell had been proposed since the beginning of the solar energy exploitation. Electronic equivalent circuit models, first-principles models and empirical models are the different modelling techniques …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 3, 2019 · pp. 8–15 Read article
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Modeling and Simulation of Pentacene based Organic Thin Film Transistors with Organic Gate Dielectrics
Abstract: AbstractTwo structures of pentacene organic thin film transistors (OTFT) with organic dielectrics, polymethyl methacrylate (PMMA) and polyvinyl alcohol (PVA) have been numerically simulated with TCAD ATLAS tool. Output and transfer characteristics were simulated and mobility, threshold voltage, sub threshold swing (SS) and current on/off ratio that play a part in the increment of conductivity of device were extracted. The authors show that the semiconductor-insulator interface actively affects the performance of …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 13–18 Read article
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Numerical Simulation and Modeling of Self Heating in SOI MOSFET
Abstract: Abstract As the device size has been reduced the temperature increment of high-performance very large scale integrations (VLSIs) becomes a major issue. The self-heating effect and non-uniform power distribution in VLSIs, affect the performance of device. In this paper numerical simulation of self heating in SOI MOSFET has been performed. Poisson's equation, continuity equation, energy balance equation and heat flow equations have been solved self consistently using finite element method …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 18–23 Read article
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Physics of Semiconductors and Electronic Circuits
Abstract: This study talks about the basic ideas behind semiconductor physics and how important they are for making and running modern electronic circuits. It starts with a look at intrinsic and extrinsic semiconductors, going into how charge carriers move, energy band theory, and how doping affects how well the electricity flows. Next, the conversation turns to semiconductor devices like diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). The focus is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 9–17 Read article
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Modeling of In0.53Ga0.47As Quantum Dot Solar Cell
Abstract: AbstractQuantum dot solar cells have received tremendous attention for the next generation solar cell technology in the last decade. This paper exhibits the influence of In0.53Ga0.47As/GaAs quantum dots in a conventional p-i-n GaAs solar cell. The study reveals that insertion of In0.53 Ga0.47As/GaAs quantum dots in the p-i-n solar cell increases the short circuit current density as well as the overall conversion efficiency. When comparing a p-i-n cell with a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 27–31 Read article
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Emerging Trends in Applications of Semiconductor Alloys in Wireless Communications
Abstract: AbstractArsenide semiconductor alloys provide a natural means of tuning the magnitude of the forbidden gap and other material parameters so as to optimise and widen the application of semiconductor devices. With the advent of small-structure systems, for instance quantum wells and superlattices, the special effects of alloy composition, size, device geometry, doping and controlled lattice strain can be collective to accomplish maximum tunability. In this article, the concepts and ideas …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 31–41 Read article
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A Review on Reliability Modeling, Performance and Cost-benefit Analysis of Optical Fiber Network in DCRUST
Abstract: AbstractThis paper includes the survey of optical fiber network layer in the Deenbandhu Chhotu Ram University of Science and Technology (DCRUST) and its reliability modeling aspects to evaluate reliability of that optical fiber network. To find out reliability is important part of a system is important to know its period of working, failure rates and cost benefit analysis. Optical fiber which are buried are significantly more vulnerable to human related …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 8–13 Read article