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21 articles for “Random Access Memory”
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Implementation of STATIC-RANDOM-ACCESS-MEMORY-Based In-Memory Computing-architecture for improving Energy Efficiency
Abstract: The in-memory-computing architecture the improvement of big data and high-performance computing. In memory-computing (IMC) as reduces the latency and power consumption of data processing. Proposed research paper static random-access memory-based IMC architecture. By completing internal write-back, NMOS transistors increase computational efficiency and eliminate the need to read the computational output right away. A 128×128 STATIC-RANDOM-ACCESS-MEMORY-IMC macro chip is designed using the 78-nm technology. The energy efficiency of 55.3TOPS/W with supply …
Published in Journal of VLSI Design Tools and Technology · Vol. 15, Issue 1, 2025 · pp. 25–35 Read article
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Power-Efficient Design Strategies for Static Random Access Memory with Memory Blocks: A Review
Abstract: For many years, CMOS technology has been able to achieve high integration density and great performance by scaling down its feature size and threshold voltage. Power consumption has been a major concern in VLSI design due to the ongoing drop in aspect ratio and the related improvements in chip density and operation frequency. SRAM is a type of random-access memory in which an interruption in power causes data loss. For …
Published in Journal of Microcontroller Engineering and Applications · Vol. 10, Issue 3, 2023 · pp. 23–32 Read article
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Performance Analysis of Fe/SiO2/Fe MTJ and Ni/Al2O3/Ni MTJ-based Magnetoresistive Random Access Memories (MRAMs)
Abstract: This paper reports the first principle simulations of Fe/SiO2/Fe and Ni/Al2O3/Ni magnetic tunnel junctions (MTJs). A performance analysis has been done based upon the device-level simulations of the two magnetic tunnel junctions followed by the circuit level simulations of magnetoresistive random access memory (MRAM) cell operating with the two MTJs respectively. From the device-level simulations, the two MTJs have been compared with regard to the bias dependence of TMR ratios, …
Published in Journal of VLSI Design Tools and Technology · Vol. 2, Issue 1-2-3, 2012 · pp. 92–100 Read article
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Designing and Modeling of Giant Magnetoresistance (GMR) Materials based Devices in Electrical Power and Biomedical Systems
Abstract: This paper presents Designing and Modeling of Giant Magnetoresistance (GMR) Devices in Electrical Power and Biomedical Systems and the related materials. The GMR, inverse GMR, and Spin valve using exchange bias have been analytically derived and discussed from the designing point of view for optimizing the performance of the GMR based Devices in Electrical systems. More recently, GMR has been used in sensors, magnetic memory chips, and hard-disk read-heads. The …
Published in Research & Reviews : Journal of Physics · Vol. 14, Issue 1, 2025 · pp. 22–32 Read article
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Design and Implementation of Low Power and High Speed 10T SRAM with High SNM
Abstract: The project introduces a low standby power 10T (LP10T) SRAM cell that focuses on achieving high read stability and write-ability while minimizing power consumption. The LP10T SRAM cell utilizes a strong cross-coupled structure that combines a standard inverter with a stacked transistor and a Schmitt-trigger inverter with a double-length pull-up transistor. One of the key advantages of the LP10T SRAM cell is that it separates the read path from the …
Published in Journal of Microcontroller Engineering and Applications · Vol. 10, Issue 1, 2023 · pp. 40–65 Read article
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A Reliable Low Standby Power 6T SRAM Cell
Abstract: The project introduces a low standby power 10T (LP10T) SRAM cell that focuses on achieving high read stability and write-ability while minimizing power consumption. The LP10T SRAM cell uses a robust cross-coupled design that combines a Schmitt-trigger inverter with a double-length pull-up transistor and a regular inverter with a stacking transistor. One of the key advantages of the LP10T SRAM cell is that it separates the read path from the …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 1, 2023 · pp. 33–59 Read article
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Development of Polymer Based SRAM Cell with Enhance Low Power Performance
Abstract: Low-power memory technologies are in high demand with the rapid growth of portable electronics and energy-efficient computing systems. Static random-access memory (SRAM) plays a crucial role in processors, cache memories, and system-on-chip applications due to their speed and reliability. Static Random Access Memory (SRAM) is typically implemented using complementary MOS (CMOS) technology, which integrates both PMOS (P-channel Metal–Oxide–Semiconductor) and NMOS (N-channel Metal–Oxide–Semiconductor) transistors. However, as technology scales to deep submicron …
Published in Journal of Polymer & Composites · Vol. 14, Issue 1, 2026 · pp. 1439–1448 Read article
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Reduce the Leakage Current and Power in VLSI Technology
Abstract: Demand for portability Reduce and increase in size, low cost, low dynamic power, low leakage current, low sub threshold current, and the necessity to minimise at least one of these. Circuit complexity increases with circuit integration. Memory and microprocessors are included in mass-produced chips. Microcomputer systems central system memory uses dynamic random-access memory (DRAM). One benefit of DRAM memory is its high speed and capacity integration. The examination of DRAM …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 3, 2023 · pp. 19–25 Read article
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Ferroelectric Materials for Next-Generation Non-Volatile Memory Applications
Abstract: The continuous scaling of conventional memory technologies is increasingly constrained by limitations in power consumption, speed, endurance, and integration density. As data-intensive applications such as artificial intelligence, Internet of Things, and edge computing demand fast and energy-efficient memory solutions, alternative non-volatile memory technologies have gained significant attention. Ferroelectric materials, characterized by their reversible spontaneous polarization, offer a promising pathway toward next-generation non-volatile memory due to their intrinsic non-volatility, low operating …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 1–9 Read article
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Designing and Testing of various types of SRAM topologies with 90nm Technology
Abstract: VLSI technology provides a way for designing compact devices which are useful to human for leading their day to day, the advancement in the technology provides high speed and power consuming appliances. In this category, intend to design an application with high data rate and low power, memory efficient device and Static Random-Access Memory (SRAM) is structured. Improvement in the technology comprises of scaling down the design process and impact …
Published in Journal of Electronic Design Technology · Vol. 13, Issue 1, 2022 · pp. 12–16 Read article
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Electrical Measurements on La-modified Four-Layered Aurivillius Ceramics
Abstract: Bismuth layered structure ferroelectric (BLSF) of Aurivillius family is found to be attractive owing to its scientific and technological point of view. These materials have potential ferroelectric applications owing to the fact of its high Curie temperature, high temperature piezo-devise and ferroelectric random access memory (FRAM), applications. In addition, Bi-modified compounds have shown improved ferroelectric properties. However, the plausible reason for improving ferroelectric properties in Bi-modified is still unclear. The …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 157–170 Read article
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Performance and Analysis of 6T, 8T & 10T SRAM Cell in 28nm Technology
Abstract: Technology scaling into deep sub-micron regimes has significantly increased the design challenges of Static Random Access Memory (SRAM), particularly at the 28 nm technology node. As transistor dimensions shrink, SRAM cells become more vulnerable to stability degradation, leakage current, process variations, and reduced noise margins, which adversely affect overall memory performance and reliability. The conventional 6T SRAM cell remains widely used due to its compact structure and high storage density; …
Published in Journal of VLSI Design Tools and Technology · Vol. 16, Issue 2, 2026 Read article
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Design of 10T SRAM Cell for Low Power and High Speed Applications
Abstract: AbstractThis paper presents techniques for designing a low-power and higher read speed Static Random Access Memory (SRAM) cell. The cell achieves low power dissipation due to Virtual Ground (VGND) scheme and provides higher read performance due to Forward Body Biasing (FBB). Design metrics of the proposed SRAM cell was studied and compared with that of CON 6T, CON D10T, TG 8T, 9T, and ST-10T SRAM cells. It was observed that …
Published in Journal of Electronic Design Technology · Vol. 8, Issue 2, 2017 · pp. 16–27 Read article
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A Review of Home Automation Technology Installation with the help of Raspberry Pi and Internet of Things
Abstract: AbstractHome Automation is creating a system of electronic devices that are able to work together to create a system that gives someone total control over all the electronic devices in their house from anywhere. IOT (Internet of Things) is a network of devices that are connected to the internet are able to hold and accept information with each other. The IOT consists of multiple devices, interfacing with a microcontroller to …
Published in Journal of Microwave Engineering and Technologies · Vol. 7, Issue 2, 2020 · pp. 16–20 Read article
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Characterization of a Single-Ended Schmitt-Trigger based 9T SRAM Cell
Abstract: Data stability is a prime concern in submicron regime. This work presents a single-ended Schmitt- trigger (ST) based 9T static random-access memory (SRAM) cell. Proposed design provides enhanced read stability as it uses ST based inverters. Low power dissipation is achieved by employing just a single bit line. Simulation is carried out on gpdk 180nm CMOS technology on Cadence. Proposed design offers 1.36x improvement in read static noise margin (RSNM) …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 26–31 Read article
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Schmitt-Trigger Based 12T SRAM Cell with Enhanced Stability
Abstract: In this work, we present a single-ended Schmitt-trigger (ST) based 12T static random access memory (SRAM) cell. The proposed cell employs cross-point data aware write structure, and thus supports bit interleaving architecture to mitigate soft errors. The proposed cell does not suffer from read disturbance as bit line is completely isolated from bit storage node. Simulation is done on 180 nm CMOS technology on Cadence. Read static noise margin (RSNM) …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 5–10 Read article
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Design and Implementation of Array for Scaling Power and Area in 4t SRAM Cell
Abstract: In this article in order to reduce the power and area of the Static Random-Access Memory (SRAM) array while maintaining the competitive performance. By using the CMOS technology, the design structure is made to for desired configuration of SRAM array by utilizing the SRAM cell and six-transistor (6T), In order to reduce the number of switches for enhancing performance working with the deep submicron of values 130nm, 90nm and 65nm …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 29–33 Read article
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The Emerging Technologies in the Field of Semiconductors Along with the Use of the System on Chip
Abstract: An entire electronic or computer system can be combined onto a single platform using a system on chip, which is effectively an integrated circuit. The primary objectives underlying the development of this system on chip are to decrease energy waste, cut costs, and decrease the area occupied by massive systems. Students can understand and experience many methods utilised at each level of the design hierarchy using this strategy. The expansion …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 1, 2024 · pp. 8–15 Read article
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Low Power High Speed Eight-Transistor (8T) SRAM Cell with Enhanced Data Stability
Abstract: The demand of static random access memory cell in embedded memories is rapidly increasing. To design SRAM is continuously becoming difficult due to limitation of weaker write margin, degraded data stability and higher leakage power consumption. In order to overcome these limitations, new 8T SRAM has been explored. The simulation results depicts better data stability, low access delay and decreased leakage power consumption. Alternatively, proposed cell with sleep transistor and …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 35–44 Read article
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Power Analysis Comparison of Gated Diode Dram Cell Design on 32 nm Technology
Abstract: In this paper power consumption of Gated diode DRAM (Dynamic Random Access Memory) cells are carried out. This analysis is carried out on 32 nm scale. The DRAM cell used here are 3T1D and 2T1D DRAM cell. Static, total average and transient power for both types of cells are simulated in order to have a comparison of their performance on the same technology. A comparative study of different types of …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 1, 2015 · pp. 19–23 Read article