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44 articles for “Quantum well”
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DC and RF Analysis on Specific Quantum-Well Heterostructures
Abstract: Polarization-graded AlGaN back-barrier nano-layer is introduced in high electron mobility transistor (HEMT) structure to have an improved drain current characteristics and better radio-frequency performance, using two-dimensional drift-diffusion simulation by SILVACO-ATLAS physical simulator. In this work, the AlGaN/AlN/GaN/AlGaN/GaN double heterojunction HEMT structure is optimised with graded back barrier layer to study the DC and RF performances. Investigation of this structure with graded back barrier layer is the novelty of this work. …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 1–13 Read article
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High Modulation Performance of a Designed InGaN Based 405 nm Multi-Quantum Well Violet Laser
Abstract: AbstractIn this work, the modulation performance characteristics of a designed 405 nm InGaN based multi-quantum well (MQW) Violet Laser are optimized and presented by varying injection current and differential gain. A maximum output power of 222.53 mW and a maximum resonance frequency of 18.79 GHz of the laser are obtained for 117 mA injection current, where, the differential gain is 4x10-16cm2. The differential quantum efficiency of the laser is obtained …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 7–13 Read article
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Design and Performance Analysis of a 635 nm Ga0.5In0.5P/(Al0.7Ga0.3)0.5In0.5P Multiple Quantum Well Separate Confinement Heterostructure Red Laser Considering Thermal Limitations
Abstract: AbstractIn this work, the performance characteristics of a GaInP - based 635 nm multiple quantum well (MQW) separate confinement heterostructure (SCH) Red laser has been obtained through computations. The material gain of Ga0.5In0.5P/(Al0.5Ga0.5)0.5In0.5P MQW edge emitting laser (EEL) has been theoretically obtained. The peak material gain obtained from the analysis has been used for analyzing the performance of the designed double-heterostructure laser. A maximum output power of 71.18 mW and …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 1, 2013 · pp. 11–17 Read article
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Experimental Investigations to Improve the Electrical Characteristics of Nitride-Based Nanoelectronic High Electron Mobility Transistors
Abstract: In this work, the DC and RF performances of conventional nanoelectronic high electron mobility transistor (HEMT) are compared with those of two individually modified HEMT structures in a nano-scale regime. All simulation results are produced by the SILVACO- ATLAS physical simulator according to the performed designs of HEMT structures. In each of these HEMT structures, the formation of quantum well is demonstrated at unbiased condition. In the DC analysis of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 14–30 Read article
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Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
Abstract: AbstractWe report the drain characteristics of AlGaN/GaN/AlGaN double heterojunction (DH) high electron mobility transistors (HEMTs) with the associated quantum well depths. The drain current is higher corresponding to the larger doping concentration of AlGaN nano-layer. The drain current is higher with the larger gate voltage at any particular drain voltage. The quantum well depth is significantly higher with the increasing doping concentration of AlGaN nano-layer. About the novelty of this …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 6–18 Read article
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Simulation Studies on the Electrical Characteristics of High Electron Mobility Transistors
Abstract: AbstractSimulation studies have been performed on the AlGaN/GaN high electron mobility transistor (HEMT) with AlN spacer layer. The current-voltage characteristics have been studied with respect to different gate voltages and different doping concentrations. Studies have been performed on the quantum well depth variation corresponding to the designed HEMTs.Keywords: Doping, drain current, drain voltage, quantum wellCite this ArticleSanjib Kalita, Ashish Prajapati, Susanta Sinha Roy, Jyoti Prasad Banerjee, James Andrew McLaughlin, Subhadeep …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 32–36 Read article
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Performance Analysis of a 1550nm MQW VCSEL by Varying Injection Current
Abstract: AbstractIn this work, the performance of a 1550nm top emitting multi quantum well (MQW) vertical cavity surface emitting laser (VCSEL) has been obtained for the selected quaternary compound In0.53Ga0.47As0.88P0.12 quantum well material the peak material gain is obtained as 1425cm-1. The optical output power of 31.35dBm and the resonance frequency of 5.8GHz are obtained at 6.1mA of injection current. Further by increasing the injection current up to 12mA a maximum …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 25–29 Read article
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Analysis of Saturation Power based on Device Structural Parameters of a 1550 nm Symmetrical MQW Semiconductor Optical Amplifier
Abstract: AbstractThis paper presents the effect of device structure parameters on the saturation power of a 1550 nm symmetrical Multi Quantum Well (MQW) Semiconductor Optical Amplifier (SOA) for a small signal amplifier gain of 30 dB. Expressions are given to assess this dependency and the results indicate that saturation power decreases with the increase of the number of wells, well thickness and length but increases with the increase of barrier thickness. …
Published in Trends in Opto-electro & Optical Communication · Vol. 5, Issue 1, 2015 · pp. 13–18 Read article
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Improved Performance Characteristics of a Designed 1050 nm Bottom Emitting MQW VCSEL using Al0.25Ga0.22In0.53As/InP Materials
Abstract: AbstractIn this work, the design and performance characteristics of a bottom emitting Al0.25Ga0.22In0.53As/InP Multi-Quantum Well (MQW) Vertical-Cavity Surface-Emitting Lasers (VCSEL) have been presented for operation at a wavelength of 1050 nm. The transparency carrier density and bandgap energy of the QW and barrier materials are computed. An improved performance of the designed VCSEL has been obtained by selecting a material with high gain and lower transparency carrier density in the …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 3, 2013 · pp. 22–30 Read article
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The Role of Symmetry in Topological Insulators and Superconductors
Abstract: Topological insulators and superconductors constitute a class of quantum materials characterized by insulating bulks and symmetry-protected conducting boundaries. Symmetry principles, notably time-reversal (TRS), particle-hole (PHS), and chiral symmetry, play a fundamental role in determining the topological phases and their classification within the Altland-Zirnbauer scheme. TRS protects gapless surface states in topological insulators, while PHS stabilizes Majorana modes in topological superconductors. Symmetry-protected topology extends this framework by considering partial symmetry breaking, …
Published in Emerging Trends in Symmetry · Vol. 1, Issue 2, 2025 · pp. 01–05 Read article
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Effects of Variation of Differential Gain and Injection Current on the Performance Characteristics of the Designed 405 nm MQW Violet Laser
Abstract: AbstractIn this work the Designing and Performance Analysis of a 405 nm InGaN based multi quantum well (MQW) Violet Laser have been presented. The internal designing of 405nm Violet Laser has been done with appropriate calculation. The desired wavelength of 405nm was obtained by adjusting the exact concentration of In0.0979Ga0.9021N / Al0.07Ga0.93N. The effects on Rate Equations by varying the differential gain and Injection current have been observed. Also the …
Published in Trends in Opto-electro & Optical Communication · Vol. 4, Issue 1, 2014 · pp. 13–22 Read article
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Emerging Trends in Applications of Semiconductor Alloys in Wireless Communications
Abstract: AbstractArsenide semiconductor alloys provide a natural means of tuning the magnitude of the forbidden gap and other material parameters so as to optimise and widen the application of semiconductor devices. With the advent of small-structure systems, for instance quantum wells and superlattices, the special effects of alloy composition, size, device geometry, doping and controlled lattice strain can be collective to accomplish maximum tunability. In this article, the concepts and ideas …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 31–41 Read article
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Analysis of Modulation Response of a 450 nm True Blue Semiconductor Laser by Varying Differential Gain
Abstract: AbstractIn this work the analysis of modulation response of a 450 nm InGaN based multi-quantum well (MQW) true blue semiconductor laser have been presented. The internal designing of 450 nm blue laser has been done before. but the desired wavelength of 450 nm was obtained by adjusting the exact concentration of In0.211Ga0.789N/Al0.07Ga0.93N in this work. The effects on modulation response by varying the differential gain have been observed. Also, the …
Published in Trends in Opto-electro & Optical Communication · Vol. 5, Issue 1, 2015 · pp. 1–8 Read article
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Performance Enhancement of Laser based Modern Railway Mobile Platform Crossing System
Abstract: AbstractIn this work, the modern railway mobile platform crossing system is improved through the proper computation of GaInP based 635 nm multiple quantum well red laser maintaining the perfect peak intensity of the power which is achieved at 635 nm. By analyzing the performance of the designed Ga0.5In0.5P/ (Al0.5Ga0.5)0.5In0.5P edge emitting laser the peak material gain is obtained. Sustaining threshold current of 6.7 mA, a maximum resonance frequency of 10 …
Published in Trends in Opto-electro & Optical Communication · Vol. 4, Issue 1, 2014 · pp. 23–28 Read article
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Effects of Variation of Active Region Radius on the Performance Characteristics of a Designed 1550 nm Al0.09Ga0.38In0.53As/InP MQW VCSEL
Abstract: AbstractIn this work, the performance characteristics of a designed Al0.09Ga0.38In0.53As/InP based 1550 nm top emitting multi quantum well (MQW) vertical cavity surface emitting laser (VCSEL) has been obtained. By evaluating the attained result of different parameters of selected MQW VCSEL the peak material gain is obtained as 1652.3 cm-1. For 6.1 mA of injection current and 5.65 µm of active region radius, the optical output power of 31.37 dBm and …
Published in Trends in Opto-electro & Optical Communication · Vol. 4, Issue 3, 2014 · pp. 8–13 Read article
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Performance Analysis and Optimization of a 1550 nm MQW VCSEL by Varying Differential Gain and Injection Current
Abstract: AbstractIn this work, the performance characteristics of a 1550 nm top emitting multi quantum well (MQW) vertical cavity surface emitting laser (VCSEL) using AlGaInAs/InP are presented. Using this material the peak material gain is obtained as 1652.3 cm-1. A high performance designed VCSEL is obtained with the optimized value of differential gain and injection current. The optical output power of 31.37 dBm and the resonance frequency of 2.5 GHz are …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 3, 2013 · pp. 31–37 Read article
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String Theory: Simplified Insights into Reality
Abstract: "String Theory: Simplified Insights into Reality" explores the fascinating realm of theoretical physics, delving into the profound principles of string theory and its implications for our understanding of the fundamental nature of the universe. The paper begins with an overview of the historical context, tracing the evolution of string theory from its inception as a theoretical framework to its current status as a leading candidate for a unified theory of …
Published in Research & Reviews : Journal of Space Science & Technology · Vol. 13, Issue 1, 2024 · pp. 1–11 Read article
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Size Dependent Fluorescence Decay Dynamics of MoS2 Nanoflakes
Abstract: This paper reports a profound method to prepare MoS2, and the effect of ultraviolet light irradiation on its emission characteristics. The exfoliation of molybdenum di-sulfide (MoS2) in a liquid phase has been achieved successfully via probe sonication for different time intervals followed by centrifugation method. Ultraviolet–visible (UV–vis) spectra of the obtained MoS2 dispersions at different exfoliation time indicate that the concentration of MoS2 nanosheets as well as MoS2 quantum dots …
Published in Journal of Polymer & Composites · Vol. 8, Issue 1, 2020 · pp. 71–76 Read article
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Chlorophyll-Mimicking Ti₃C₂Tₓ MXene-Conjugated Polymer Nanocomposites: Nature-Inspired Exciton Funneling Architecture for Ultrahigh Photon-to-Electron Conversion in Organic Solar Cells
Abstract: Green plant photosynthetic machinery is one of the most efficient natural systems for harvesting solar energy and converting it into useable electronic charge. Specifically, chlorophyll molecules in the Light-Harvesting Complex II (LHC-II) achieve nearly unity quantum yield via a well-organized Förster Resonance Energy Transfer (FRET) mechanism that enables excitons to migrate towards reaction centers. This study presents a bio-inspired nanocomposite architecture using two-dimensional Ti₃C₂Tₓ MXene nanosheets functionalized with chlorophyll-mimicking porphyrin …
Published in Journal of Polymer & Composites · Vol. 14, Issue 4, 2026 · pp. 114–130 Read article
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Differential Equations in Quantum Mechanics and Schrödinger Equation
Abstract: In this study we investigate how differential equations play a role in quantum mechanics, focusing mainly on the role of a prominent one, Schrödinger's equation, which governs the behavior of quantum systems. In time two the mathematical picture of the wave nature of particles at quantum scales is provided, and the resulting equations are Schrödinger's equation, both in its time dependent as well as in its time independent form. The …
Published in Emerging Trends in Symmetry · Vol. 1, Issue 1, 2025 · pp. 15–25 Read article