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6 articles for “PWE (plane wave expansion )”
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Analysis of Braggs Grating for photonics application
Abstract: The plane wave expansion approach was used to optimise reflectance in a Braggs grating on a silicon on insulator structure at wavelength 1.55µm. When the results were compared to the experimental results, it was discovered that they agreed better than any other present results. Aside from the inherent benefits of FBGs, such as low cost, low losses, polarisation insensitivity, and full compatibility with fiber-optic systems, they have demonstrated that by …
Published in Journal of Microwave Engineering and Technologies · Vol. 9, Issue 1, 2022 · pp. 32–35 Read article
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Asymmetrical Light Propagation in 2D Photonic Crystal Structure
Abstract: In this work, using Plane Wave Expansion (PWE) and two-dimensional Finite Difference Time Domain (2D-FDTD) methods, we design a structure that shows the high asymmetry in propagation of light. Structure is based on two-dimensional Photonic Crystal (2D-PC) consisting of square lattice (39 X 39) of infinitely long circular rods of refractive index 2.9 in the background of refractive index 1. Radius of rods is 0.15a, where a is the lattice …
Published in Journal of Polymer & Composites · Vol. 11, Issue 7, 2023 · pp. 69–74 Read article
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Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application
Abstract: AbstractOptical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power.Keywords: SG-SOI, PWE, power
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 22–24 Read article
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Understanding of optical power in semiconductor based SOI Structure at the signal 1550 nm
Abstract: A silicon-on-insulator (SOI) structure consists of a single crystalline silicon layer separated from the bulk substrate by a thin insulator layer. The insulator in SOI wafers is usually always a thermal silicon oxide (SiO2) layer, with a silicon wafer as the substrate. The silicon sheet can be very thin (50 nm for fully depleted transistors) or tens of micrometres thick, depending on the application. Similarly, the thickness of buried oxide …
Published in Trends in Opto-electro & Optical Communication · Vol. 12, Issue 1, 2022 · pp. 19–23 Read article
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Optimization of reflectance based on SAG Structure using Plane Wave Expansion
Abstract: For future filter applications, we examine the silicon-based ternary grating SAG (silicon on air on glass) structure. Grating is accomplished by a one-dimensional grating structure composed of ternary periodic structure, where ternary period is realized by combining silicon-air-silicon dioxide layers. The plane wave expansion method (PWE) is utilized to mimic the reflections from such periodic structures. The simulation outcome divulges that the number of layers in the periodic structures have …
Published in Journal of Microcontroller Engineering and Applications · Vol. 9, Issue 1, 2022 · pp. 40–45 Read article
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Realization of Braggs Grating for SOI Application using PWE Method
Abstract: AbstractThis paper presents the optimization of reflectance in Braggs grating on silicon-on-insulator (SOI) structure at wavelength 1.55 μm using plane wave expansion method. It is seen that reflectance’s differ on different SOI structures. Simulation result reveals that polymer-air grating SOI structure having a period of 0.5 mm, grating length of 2 cm is matched with experimental results and it is found that better agreement than any other results in literature.Keywords: …
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 30–35 Read article