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1 article for “Noise Margin”
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R-M and M-R Model for Interpreting Logic State of Memristor Aided NOR with Enhanced Noise Margin
Abstract: Memristive crossbar arrays are one of the fascinating subjects in the field of nanoelectronics and memory devices. The arrangement of arrays consists of grid-like structure with rows and columns of memristors which are resistive devices that can preserve their resistance state even after power is turned OFF. They have now emerged as a promising alternative to traditional memory technologies due to their high density, non-volatility and low power consumption. This …
Published in Recent Trends in Mathematics · Vol. 1, Issue 1, 2024 · pp. 35–41 Read article