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9 articles for “Nanoelectronics”
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Nanoelectronics Based on Carbon Nanotubes
Abstract: Nanoelectronics, the study and application of electronic components and systems at the nanometer scale, plays a pivotal role in advancing modern technology toward faster, smaller, and more energy-efficient devices. Among the various nanomaterials explored for these applications, carbon nanotubes (CNTs) have emerged as one of the most promising candidates due to their exceptional electrical conductivity, mechanical strength, and thermal stability. This project report presents an in-depth exploration of the role …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 15, Issue 3, 2025 · pp. 40–53 Read article
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Spintronic Logic Device Modeling and Energy Optimization for Beyond-CMOS Computing Systems
Abstract: The continuous scaling limitations of conventional CMOS technology have accelerated the exploration of alternative computing paradigms for next-generation low-power and high-performance systems. Spintronic logic devices have emerged as a promising solution due to their non-volatility, ultra-low switching energy, high integration density, and compatibility with beyond-CMOS architectures. This research presents a comprehensive modeling and energy optimization framework for spintronic logic devices applied in beyond- CMOS computing systems. The proposed work investigates …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 4, Issue 1, 2026 Read article
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Recent Innovations in Semiconductor Materials for Smart Electronic Devices
Abstract: Recent advancements in semiconductor materials have significantly transformed the design, performance, and functionality of smart electronic devices such as smartphones, wearable systems, IoT devices, autonomous systems, and biomedical electronics. With the continuous demand for higher processing speed, lower power consumption, improved thermal stability, and extreme miniaturization, traditional silicon-based semiconductor technology is facing major limitations. As device dimensions shrink to the nanometer scale, challenges such as leakage current, heat dissipation, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 Read article
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A Comprehensive Review of FinFet Technology: Advantages, Challenges and Applications
Abstract: This has been complemented by improvements on the new layers that have surpassed the manufactures planar transistor by the new FinFET (Fin Field-Effect Transistor), which enhance modern demands on high performance, small size and low power consumption. This review is for a timely information on the latest development on FinFET technology, such as by curbing leakage currents by 50 percent and enhancing its speed by 30 percent proving that FinFETs …
Published in Journal of Semiconductor Devices and Circuits · Vol. 11, Issue 3, 2024 · pp. 1–12 Read article
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R-M and M-R Model for Interpreting Logic State of Memristor Aided NOR with Enhanced Noise Margin
Abstract: Memristive crossbar arrays are one of the fascinating subjects in the field of nanoelectronics and memory devices. The arrangement of arrays consists of grid-like structure with rows and columns of memristors which are resistive devices that can preserve their resistance state even after power is turned OFF. They have now emerged as a promising alternative to traditional memory technologies due to their high density, non-volatility and low power consumption. This …
Published in Recent Trends in Mathematics · Vol. 1, Issue 1, 2024 · pp. 35–41 Read article
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Current-Voltage Characteristics of 15-Atom Agnrs and Zcnts at Various Bias Voltages: Insights for Polymer Nanocomposite Applications
Abstract: The present research investigates the electronic properties of 15-atom Armchair Graphene Nanoribbons (AGNRs) and 15-atom Zig-Zag Carbon Nanotubes (ZCNTs) under applied bias voltages of 100, 200, 300, 400, 500, and 600 millivolts. Using the Non-Equilibrium Green's Function (NEGF) technique, the study analyzes various electrical features, including current-voltage (I-V) characteristics, to understand the behavior of these nanostructures. The findings reveal that AGNRs exhibit a larger bandgap than ZCNTs, which have a …
Published in Journal of Polymer & Composites · Vol. 13, Issue 2, 2025 · pp. 135–144 Read article
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Comparison of 11-Atom Armchair Graphene Nanoribbons and Zig-Zag Carbon Nanotubes in Polymer Composites Under Various Bias Voltages: A Study of Electronic and Transmission Properties
Abstract: In this research, 11-atom zig-zag carbon nanotubes (ZCNTs) and 11-atom armchair graphene nanoribbons (AGNRs) were studied under applied bias voltages at 50, 150, and 300 millivolt levels. The focus was on understanding their behaviour concerning transmission qualities, current-voltage (I-V) characteristics, and energy-momentum (E-K) diagrams. The Non-Equilibrium Green's Function (NEGF) approach was employed to analyse various electronic properties for ZCNTs and AGNRs, including transmission, E-K relationships, and I-V characteristics. The results …
Published in Journal of Polymer & Composites · Vol. 13, Issue 2, 2025 · pp. 126–134 Read article
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Optical properties of Carbon quantum dots for AI enhanced flexible bioelectronics and nanomedicine
Abstract: Carbon nanodots are the emerging nanomaterials of 20 th century. Carbon nanodots is the family of carbon based material with distinguished bio-physical properties. In this paper, the optical properties of carbon nanodots are presented. One of the developments Nanoscale physics and nanotechnology is the ability of converting optical signals into meaning full information. This innovation is accelerated and improved by incorporating nanoscale materials including carbon quantum dot, carbon nanotube, and …
Published in International Journal of Photochemistry and Photochemical Research · Vol. 3, Issue 1, 2025 · pp. 19–30 Read article
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Photonic-Assisted Spintronic Solid-State Switching Model for High-Speed Memory Devices
Abstract: The rapid advancement of high-speed computing and data-centric applications has intensified the demand for energy-efficient and ultra-fast memory technologies. This paper proposes a Photonic-Assisted Spintronic Solid-State Switching Model for next-generation high-speed memory devices. The proposed framework integrates photonic excitation mechanisms with spintronic switching dynamics to enhance data transfer speed, minimize switching delay, and reduce power dissipation in solid-state memory architectures. By combining optical pulse-assisted spin polarization with magnetic tunnel junction-based …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article