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193 articles for “transistor”
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A Review of Electrical Conduction, Optical Sensing, and Semiconductor Device Innovations
Abstract: Electrical conduction and semiconductor device technologies form the backbone of modern electronic and sensing systems. This review presents a comprehensive analysis of conduction mechanisms across different materials, including conductors, semiconductors, and insulators, with particular emphasis on charge carrier behavior, resistivity, and energy band structures. The study highlights how variations in material properties and external conditions influence electrical performance and device efficiency. The paper further explores advancements in semiconductor devices, focusing …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 · pp. 10–18 Read article
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Silicon Symphony: The Science of Semiconductors Circuits
Abstract: Modern electronics are built on the foundation of semiconductor circuits, which precisely and efficiently control the flow of electrical impulses. This article takes a look at the underlying physics of semiconductor materials and how their unique electrical properties allow the design and functioning of diodes, transistors and integrated circuits. This study links microscopic scientific principles to the behaviour of real circuits. It considers essential concepts such as charge carriers, doping …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
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Computational Modeling of Polymer Semiconductors for Electronic Applications
Abstract: Polymer semiconductors have become important materials in modern electronic applications because they combine semiconducting behavior with mechanical flexibility, low-cost processing, and tunable molecular structure. Their growing use in organic field-effect transistors, organic photovoltaics, organic light-emitting diodes, and flexible sensing devices has increased the need for accurate computational approaches that can predict material properties and device performance before experimental fabrication. This paper reviews the major computational modeling techniques used for polymer …
Published in Journal of Polymer & Composites · Vol. 14, Issue 3, 2026 · pp. 132–146 Read article
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Performance Analysis of DG FinFET for Ultralow-power Subthreshold Applications
Abstract: Subthreshold operating region of transistor shows huge potential toward satisfying demand of ultralow power (ULP) consumption from handheld portable devices. However, operating device with such small subthreshold leakage current as a switching current gives huge penalty in their operating frequency. For subthreshold operating region key design goal is to boost the speed of the device. DG FinFET device shows excellent device characteristics in subthreshold operating region. In this paper, 1-bit …
Published in Journal of Electronic Design Technology · Vol. 1, Issue 1-3, 2011 · pp. 26–33 Read article
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Performance Analysis of 1-Bit Full Adder using GDI and CMOS Logic
Abstract: The adder is one of the most essential part in math processor, multiplier, and in various scientific applications. Full adder plays important role in multiplier architecture. In this paper a 1-bit full adder using GDI and CMOS logic has been implemented and comparative analysis has been done. The less delay and low power consumption is achieved for this implementation. This paper presents comparison of number of transistors have been used …
Published in Journal of Electronic Design Technology · Vol. 6, Issue 2, 2015 · pp. 18–22 Read article
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Design and Optimization of Nano scale Double Gate SOI-MOSFET for Analog Applications Using SILVACO TCAD
Abstract: In this paper the structure effect on electrical characteristics of 60-nm double-gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor (DG-SOI-MOSFETs) is explored. These structures enable more aggressive device scaling in nano scale region because of their ability to control short channel effects. Established a scaling theory which gives guidance for the device optimization (Silicon film thickness Tsi (20nm); gate oxide thickness Tox (3nm); buried oxide thickness Tbox (200nm) and gate length LG …
Published in Journal of Electronic Design Technology · Vol. 1, Issue 1-3, 2011 · pp. 7–17 Read article
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Design Considerations of Si-NW FET Based Biosensor: A Review
Abstract: Nano-technology is blooming in all the fields. The use of nano-transistors in bio-sensing applications has enhanced the scope of bio-molecules detection. The traditional chemical detection of bio-molecules leads to later side-affects. In order to overcome this, electronic detection of bio-molecules is much required. Despite its advantages in detection, this technology has not reached its peak because of its design considerations and its constraints. In this study we discuss about various …
Published in Journal of Electronic Design Technology · Vol. 11, Issue 3, 2020 · pp. 1–5 Read article
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Graphene for Next Generation Green Electronics-A Sustainable Future
Abstract: The amount of e-waste or electronic waste is increasing worldwide due to the rapid development of the electronics industry and the profound usage of electronic products although it has enormous detrimental effects on the environment and humans. It has become an evolving problem due to a lack of knowledge and infrastructure for e-waste disposal and recovery. Researchers around the world are in search of environment-friendly, sustainable ‘green electronic’ material which …
Published in Journal of Energy, Environment & Carbon Credits · Vol. 12, Issue 3, 2022 · pp. 35–41 Read article
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Swing Restored Low Power and Area Efficient 8-bit Arithmetic Logic Unit Using Modified Gate Diffusion Input Technique
Abstract: AbstractThe arithmetic logic unit (ALU) is one of the most fundamental operational units in any processor. The ALU is the heart of any system or any processor and the core component of the central processing unit because mainly all the fundamental operations are performed by the help of ALU only. So, it can be defined as the combinational unit that is used to perform its logical and arithmetic units. The …
Published in Journal of Microcontroller Engineering and Applications · Vol. 5, Issue 2, 2018 · pp. 19–29 Read article
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A Survey on the various Adibatic Logic Styles used for Circuit Design in IOT & WSN Applications
Abstract: Abstract— This paper describes about different adiabatic logics are used which are all used to provide low power and high speed. Low power circuits and designs are the need of the hour as they find applications in electronic components which have power efficient processing capabilities. For IOT based applications we need to design low power VLSI circuits that utilize adiabatic logic in order to enhance the security and reduce the …
Published in Journal of Microcontroller Engineering and Applications · Vol. 9, Issue 2, 2022 · pp. 1–5 Read article
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Power-Efficient Design Strategies for Static Random Access Memory with Memory Blocks: A Review
Abstract: For many years, CMOS technology has been able to achieve high integration density and great performance by scaling down its feature size and threshold voltage. Power consumption has been a major concern in VLSI design due to the ongoing drop in aspect ratio and the related improvements in chip density and operation frequency. SRAM is a type of random-access memory in which an interruption in power causes data loss. For …
Published in Journal of Microcontroller Engineering and Applications · Vol. 10, Issue 3, 2023 · pp. 23–32 Read article
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Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm
Abstract: AbstractIn this work, total 2367 individual simulation-outputs are reported. We have studied the drain characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) having the AlGaN thickness of 22 nm. According to this study, the drain current increases with drain voltage. Also, the drain current increases with gate voltage. The drain current is observed as higher at larger aluminium mole fraction. Also, the drain current is higher at larger doping concentration. …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 1–12 Read article
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Impact of Spacer Engineering on SOI Junctionless FET Performance Using TCAD Simulation
Abstract: In this paper, the impact of spacer engineering on 10 nm gate length planar SOI (Silicon On Insulator) junctionless transistor performance is studied using Sentaurus TCAD simulator. Spacer length and spacer permittivity of the device are taken as two controllable parameters. DC performance metrics, ION, IOFF, ION/IOFF ratio, unity gain frequency (fT) and non quasi static delay (NQS) are investigated for various spacer lengths and spacer permittivity. The simulation results …
Published in Journal of Materials & Metallurgical Engineering · Vol. 6, Issue 2, 2016 · pp. 42–52 Read article
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Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTs
Abstract: AbstractIn this simulation work, a series of simulation outputs are reported related to the AlGaN/GaN single-heterojunction high electron mobility transistors (HEMTs). The effect of aluminium nitride nucleation layer on the drain characteristics is significant in single-heterojunction AlGaN/GaN HEMTs. The effects of drain voltage and gate voltage on the drain current are studied in the designed and simulated device structures. This simulation work may be a useful prediction to fabricate the …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 9–12 Read article
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Optimizing the Ratio of Number of Tubes in PCNTFET to NCNTFET for Digital Circuits
Abstract: AbstractCarbon nanotube Field Effect Transistors (CNTFET) offer various benefits as compared to other FETs. Many circuits can be constructed using PCNTFETs (P-type CNTFET) and NCNTFETs (N-type CNTFET) similar to the PMOS and NMOS of the CMOS technology. The CNTFETs employ carbon nanotubes in the channel of the device to provide a path for the ballistic conduction of electrons. The different ratios of number of tubes in channel of the PCNTFET …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 1, 2018 · pp. 34–40 Read article
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A Comparative Analysis of Various Flipped Voltage Follower Cells
Abstract: Flipped voltage follower (FVF) cell is used for designing low-voltage/low-power analog circuits. It can operate with a single supply voltage, less than the sum of the threshold voltages of a PMOS and NMOS transistor. The three different configurations of the FVF cell namely conventional FVF, FVF using level shifter (FVFLS) and FVF using bulk driven technique (FVFBD) are presented. Various parameters such as input/output swing, gain, bandwidth and power dissipation …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 2, 2017 · pp. 1–8 Read article
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A high Regulated Low Ripple DC Power Supply based on LC Filter and IGBT
Abstract: Filaments operating at a high temperature region would require ripple free current constant power source for their heating purposes. Introduction of ripple in the power supply would result in high power loss, aberrant, unpredictable temperature rise etc. High current ripple can also extenuate the life of electrolytic capacitors used in the circuit. In this paper we propose a scheme in which we would not only use simple, low cost, easily …
Published in Journal of Power Electronics and Power Systems · Vol. 2, Issue 2, 2012 · pp. 1–10 Read article
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A Hybrid Cascaded Multilevel Inverter using Space Vector Pulse Width Modulation
Abstract: This paper proposes a topology of hybrid cascaded multilevel inverter consisting of two inverters namely main inverter and auxillary inverter. Main inverter consists of three-leg inverter with single DC source and auxillary inverter consists of three H-bridge two-leg inverter with separate DC sources for each H-bridge. Switches used in our proposed method are IGBT (insulated-gate bipolar transistor). The proposed model consists of 18 switches. The switches are controlled by space …
Published in Journal of Power Electronics and Power Systems · Vol. 5, Issue 1, 2015 · pp. 14–19 Read article
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Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
Abstract: The drain characteristics are investigated with respect to electrical variables (drain voltage, gate voltage) and structural parameters of high electron mobility transistors (HEMTs). Total 10526 individual simulation-outputs are reported in this work. The maximum drain current of 553 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is higher at shorter gate length. The drain current is higher at larger aluminium …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 11–20 Read article
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Reduction of Short Channel Effects with the Variation of Poly Doping and Source/Drain Doping
Abstract: In this paper, the concentration of poly-silicon doping and source/drain doping has been varied to obtain the approximation the OFF state leakage current for N channel MOSFET. A lightly doped NMOS has been designed using 45 nm technology in ATHENA and simulated in ATLAS of SILVACO TCAD tool. After simulation results, it has been observed that as the poly-silicon doping and source drain doping concentrations are decreased, there is a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 35–42 Read article