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781 articles for “voltage (V)”
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Power and Delay Comparison of Different Low Power SRAM Cells
Abstract: This paper evaluates the performance of a various SRAMs cells for low power application. The power dissipations and delay at different supply voltage are calculated. At 32 nm, technology performance of SRAM 9T is appreciable than those of SRAM 6T and SRAM 8T. The simulation has been done in 32 nm CMOS technology by using PTM model. Tanner tool is used for schematic and simulation
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 1, 2015 · pp. 23–30 Read article
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3D Simulation of Multi-Gate Mosfet Analysis for Analog Circuit Design Parameters
Abstract: Chip density and performance improvements of semiconductor devices have been driven by their aggressive scaling. The performance of multi-gate FET for analog applications is explored in this paper. Analog operation of CMOS devices and its parameters are very important for future cutting edge technologies. The multi-gate technology shows excellent scalability and better immunity to short channel effects in MOSFETs. They are being easily assessed for CMOS applications beyond the 45 …
Published in Journal of Semiconductor Devices and Circuits · Vol. 1, Issue 2, 2014 · pp. 1–8 Read article
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Smart Solar-based Inverter
Abstract: Unavoidable shortage of fossil fuel sources in the future, renewable types of energy have become important source of energy in this generation. This Research consists of the solar panel which use solar energy and is environmentally friendly. We have performed the movement of solar tracker system using Arduino and converting the solar energy into electrical energy and this energy is stored in the battery. The DC energy stored in battery …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 3, 2020 · pp. 14–18 Read article
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Using Wireless Power System in Electric Vehicles
Abstract: The most important challenge in implementation of Electric vehicles is the limited range of EVs. The two biggest issues with wireless power transfer for electric vehicles are charging times and transfer efficiency. Charge the car while it's going is one of the possibilities, and it's called "Dynamic Wireless Power Transfer". Charging a vehicle while it is driving can dramatically impair the battery's capacity to store energy. The transformer induction concept …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 2, 2022 · pp. 10–16 Read article
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Equivalent Linear Circuit for Thevenin and Norton Representation Using Superposition Theorem
Abstract: Using superposition theorem and knowing the Thevenin representation consisting of resistor, independent DC source of a network an equivalent DC network is obtained using SPICE software with linear circuit elements and independent sources and is verified. Also, similarly from the Norton representation, equivalent circuit is obtained. A procedure with Pspice methods to obtain unknown circuit elements using reciprocity theorem is described. Possible examples for (a) only resistive networks and (b) …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 2, 2024 · pp. 1–6 Read article
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Modelling and Electrical Characterization of Single Electron Transistor
Abstract: A nano-electronic device with low power consumption, high performance, and quantum effects is the single electron transistor (SET). It's used in charge sensor applications, infrared radiation detectors, and spectroscopy. However, it faces limitations in lithography, co-tunneling effect, low gain, high output impedance, and background charges. Therefore, prior simulation is needed to optimize SET's work function and understanding physics concepts. A master equation approach is used to propose a new model …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 3, 2024 · pp. 19–25 Read article
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Experimental Investigation of Dilution Control Using Advanced Gas Metal Arc Welding Process
Abstract: This work investigates the amount of reduction in dilution by using Advanced Gas Metal Arc Welding (AGMAW) process. Dilution is the ratio of area of the base metal melted to the total area of weld bead measured across a given weld bead cross section. Dilution is one of the most important factors governing the success of any surfacing operation and is expressed in percentage. The AGMAW is a self-coined word …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 1, Issue 3, 2014 · pp. 1–7 Read article
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On a Nanocomposite Metal Oxide Thin-film Transistor with Nanofilm Gate Dielectric Material: Material Chemistry, Sol–Gel Process and Electronic Worthiness
Abstract: ABSTRACT : ILO based MOTFT is fabricated with PBZ gate dielectric. PBZ is formed over doped Si substrate by cheap sol-gel process. Thin film PBZ is analysed with XRD, UV-Vis and AFM. IZO is used as bottom gate to contact TFT. This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent e-mobility 4.5cm2/V/s, with on/off ratio 5x105 and sub-threshold swing 0.35V/decade.
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 6, Issue 3, 2019 · pp. 8–12 Read article
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Thin Film Gum Arabic Doping byPotassium BromideSolar Cells
Abstract: Three solar cell were made using Gum Arabic treated with potassium bromide with three types of dyes (Saffron dye, Henna dye and Blue 8GX dye) by using Spin Coating. Powder of gum Arabic and amount of potassium bromide was made by heated in temperature 100OC firstly, and using USB 2000 spectrometer device to calculated optical energy band gap of Gum Arabic before and after doping It was found to be …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 7, Issue 2, 2020 · pp. 23–29 Read article
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Effect of Annealing Temperature on the Structural, Morphological and Electrochemical Properties of Ruthenium Oxide Electrodes
Abstract: Transition metal oxide thin films are in great demand for a variety of technical applications, Ruthenium oxide is one of them having distinct structural, optical, chemical, and electrical properties. The structural and morphological characterization of Ruthenium oxide thin film electrodes created using the sol-gel spin coating process is covered in this work. For annealing, temperatures between 200°C and 900°C were employed. To examine electrochemistry, cyclic voltage measurement and chronopotentiometry were …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 10, Issue 2, 2023 · pp. 15–24 Read article
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Mitigation of Harmonics in Industries using a Multilevel Shunt Active Power Filter
Abstract: The vast development in power electronic equipments causes higher harmonics in the distribution line in order to reduce the harmonics. This work proposes a design of Multi-Level Inverter (MLI) based Shunt Active Filter (SAF) intended to sort out the presence of harmonics in the distribution line. This proposed SAF utilizes three level diodes clamped MLI as VSI. d-q theory is employed for reference signal generation. In order to regulate the …
Published in Journal of Telecommunication, Switching Systems and Networks · Vol. 8, Issue 3, 2021 · pp. 39–50 Read article
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Low Power High Speed Eight-Transistor (8T) SRAM Cell with Enhanced Data Stability
Abstract: The demand of static random access memory cell in embedded memories is rapidly increasing. To design SRAM is continuously becoming difficult due to limitation of weaker write margin, degraded data stability and higher leakage power consumption. In order to overcome these limitations, new 8T SRAM has been explored. The simulation results depicts better data stability, low access delay and decreased leakage power consumption. Alternatively, proposed cell with sleep transistor and …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 35–44 Read article
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Performance Analysis of 3T DRAM Using FinFET Based with Leakage Reduction Techniques at 45 nm Technology
Abstract: The proposed area of research is to reduce the power consumption, leakage voltage, leakage current and leakage power of DRAM while maintaining the competitive performance. The Fin FET approach is used in DRAM for high performance. Fin type field effect transistors (Fin FET) are capable substitutes for bulk CMOS at the nano-scale. Fin FET are double gate device. A Fin FET uses an intrinsic body. It greatly suppresses the device-performance …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 28–34 Read article
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Investigation and Dependency Analysis of Silicon Film Thickness on Performance of Surrounding Gate MOSFET at Subthreshold Regime
Abstract: The characteristics of cylindrical gate all around MOSFET have been studied in terms of the dependence of various device performance metrics on silicon film thickness (Tsi). In this work, the effect of silicon film thickness on numerous performance metrics like threshold voltage (Vt), On current (Ion), subthreshold leakage current (Ioff), On-Off current ratio (Ion/Ioff) and DIBL of cylindrical GAA are comprehensively evaluated and analysed. It has been observed that cylindrical …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 2, 2018 · pp. 49–54 Read article
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Design of Active Filter using CMOS based IInd Generation Current Conveyor in Current Mode
Abstract: Traditional design techniques used in VLSI are in voltage mode, but these have drawbacks like low bandwidth, non-linearity and less gain. Current conveyors act similar to operational amplifiers but are advantageous over older VLSI design techniques because of high bandwidth-gain product, reduced power consumption etc. This paper consists of two parts: circuit diagram of current conveyor (which is a three terminal analog device) is discussed first and its working is …
Published in Journal of VLSI Design Tools and Technology · Vol. 9, Issue 1, 2019 · pp. 15–21 Read article
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Characterization of High Speed Phase Frequency Detector Circuit
Abstract: In this paper the performance of high speed phase frequency detector (PFD) is analysed. A high-speed PFD reduces the power consumption of traditional PFD to 0.423 nW at 1 GHz clock frequency and dead zone to 2 ps. It is suitable for low power applications. A PFD uses only 18 transistors. This PFD operates up to 1 GHz at 1.2 V supply voltage. The proposed architecture of the PFD has …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 1, 2015 · pp. 51–58 Read article
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Comparative Study of (Operational Transconductance Amplifier) OTA to Design Low Pass Filter
Abstract: Basic building block to design an analog circuit is amplifier and it is used for such applications like analog to digital and digital to analog converter, sensor network and many more. Amplifier with lofty gain and high bandwidth will increase the efficiency of design. Present time is talking about development of VLSI technology and everything is related to size of transistor and decreasing power supply in a circuit. Operational transconductance …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 2, 2015 · pp. 11–15 Read article
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4-Bit Magnitude Comparator Design using Different Logic Styles
Abstract: 4-Bit Magnitude Comparator using various logic styles is explained here. Comparison is one of the common arithmetic operations that is used to determine which number is greater, equal to, or less. Every device from OP-AMP to ALU needs to perform comparison operations. At designing level, comparator can be designed by using different logic styles. Here, comparison is done for simple 4-Bit combinational comparator and cascaded comparator which we have designed …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 2, 2015 · pp. 16–22 Read article
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A Review on Charge Pump Circuits for PLL Applications
Abstract: This paper presents a review on various architectures of charge pumps (CP) for high speed Phase-locked loop (PLL) applications. The different nonlinear marvels that influence the execution of PLL in view of the CPs circuit are examined. The various high performance CP circuits with reference voltage source, reference current source are analyzed that reduces the problems associated with the traditional charge pump circuit that consists leakage current, clock feed-through, charge …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 3, 2015 · pp. 1–11 Read article
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A New High Speed Low Power 1 Bit Full Adder
Abstract: This paper proposes a low power, low area and high speed 1-bit full adder compared to earlier 1bit full adder designs. The adder comprises of eight transistors with some modifications over the other existing design, so that it can invariably be used in the device with least nano device dimensions. The proposed design exhibits lower threshold loss and works faithfully in sub-threshold regime with appreciable voltage swing at lower power …
Published in Journal of VLSI Design Tools and Technology · Vol. 3, Issue 1, 2013 · pp. 8–13 Read article