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71 articles for “Gate voltage”
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Performance Comparison of Noise-Tolerant, High- Performance CMOS Domino Logic Configurations
Abstract: In high-performance VLSI chip design, domino logic configuration is often preferred over static logic due to its faster operation and smaller area footprint, especially in deep submicron (DSM) technology. However, DSM noise has become a significant challenge in domino-based circuits, leading to compromises in the reliability and signal integrity of integrated circuits (ICs). The switching threshold of domino logic, defined as the input voltage level at which the gate output …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 35–50 Read article
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Optimization of a Digital Adder Design Using MOSFET and FinFET Technology
Abstract: AbstractIn this study, a very low power high speed Adder is presented by using short gate mode technique and voltage scaling system for FinFET. MOSFET and FinFET technique is used on 32 nm by adders which compare delay and average power. Parametric study of fins vs. power is also performed in the study. Synopsys HSPICE software is used for obtaining the simulation results. Simulation results show that low power is …
Published in Journal of Electronic Design Technology · Vol. 9, Issue 2, 2018 · pp. 30–33 Read article
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Investigation of FPGA based PWM Control Technique for AC Motors
Abstract: This paper proposes a Random Frequency PWM synchronized for a three phase inverter implemented with use of Field Programmable Gate Array (FPGA) and applied to a 1-hp induction motor drive system for the reduction of harmonics and improvement of fundamental peak voltage. For providing alternating output voltage with a specific magnitude and frequency to industrial applications, three-phase inverter is preferred. The gating signals to the inverter are produced by means …
Published in Journal of Power Electronics and Power Systems · Vol. 3, Issue 2, 2013 · pp. 16–22 Read article
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Numerical Simulation and Parameter Analysis for Pentacene based Organic thin Film Transistor with HfO2 Gate Dielectric
Abstract: This paper explains 2D numerical simulation and Characterization of Electrical parameter of Pentacene (Organic semiconductor) based Organic thin film transistor (OTFT) devices with HfO2 as a gate dielectric and Electrical parameters including; Threshold Voltage (Vt), Mobility (µ),Ion/Ioff, and Transconductance (gm), Sub threshold slope (SS) are extracted. The numerical simulation includes model for defect density of state and field dependent mobility model.
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 2, 2019 · pp. 28–34 Read article
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Power-delay Product Optimal Design of Sequential Circuits Using Carbon Nanotubes
Abstract: This paper presents a power-aware high-performance design of ternary combinational and sequential circuits based on carbon nanotube field effect transistor (CNFET) using ternary logic. Carbon nanotube based field effect transistor (CNFET) are being studied extensively as a possible and promising choice for nanoscale integration and as successor to complementary metal oxide semiconductor (CMOS) devices. Ternary logic circuit has attracted substantial interest due to its simplicity, energy efficiency, and reduced interconnect …
Published in Journal of VLSI Design Tools and Technology · Vol. 3, Issue 3, 2013 Read article
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A Neuromorphic-Inspired, Low-Power VLSI Architecture for Edge AI in IoT Sensor Nodes
Abstract: As the proliferation of Internet of Things (IoT) devices continues to rise, there is an increasing demand for real-time, energy-efficient artificial intelligence (AI) processing directly at the network edge. Traditional edge AI accelerators, often based on deep learning models like convolutional neural networks (CNNs), struggle to meet the ultra-low-power requirements of battery-constrained IoT sensor nodes. In response to this challenge, this study introduces a neuromorphic-inspired, low-power very- large-scale integration (VLSI) …
Published in Journal of Microelectronics and Solid State Devices · Vol. 12, Issue 2, 2025 · pp. 41–47 Read article
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Modelling of Grid Tied 3-Level Diode Clamped Inverter Using Sinusoidal PWM for Solar Application
Abstract: AbstractIn this paper the AC Loads are fed from solar energy by means of Three-level Diode Clamped Inverter. The entire system is three phase supply system. To make the system more efficient Maximum Power Point Tracking (MPPT) is used. The Perturb & Observe method is used to obtain voltage at maximum power. In this work Sinusoidal Pulse Width Modulation (SPWM) technique is implemented to generate gate pulses to make the …
Published in Journal of Power Electronics and Power Systems · Vol. 5, Issue 3, 2015 · pp. 9–16 Read article
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Design and Optimization of Nano scale Double Gate SOI-MOSFET for Analog Applications Using SILVACO TCAD
Abstract: In this paper the structure effect on electrical characteristics of 60-nm double-gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field Effect Transistor (DG-SOI-MOSFETs) is explored. These structures enable more aggressive device scaling in nano scale region because of their ability to control short channel effects. Established a scaling theory which gives guidance for the device optimization (Silicon film thickness Tsi (20nm); gate oxide thickness Tox (3nm); buried oxide thickness Tbox (200nm) and gate length LG …
Published in Journal of Electronic Design Technology · Vol. 1, Issue 1-3, 2011 · pp. 7–17 Read article
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3D Simulation of Multi-Gate Mosfet Analysis for Analog Circuit Design Parameters
Abstract: Chip density and performance improvements of semiconductor devices have been driven by their aggressive scaling. The performance of multi-gate FET for analog applications is explored in this paper. Analog operation of CMOS devices and its parameters are very important for future cutting edge technologies. The multi-gate technology shows excellent scalability and better immunity to short channel effects in MOSFETs. They are being easily assessed for CMOS applications beyond the 45 …
Published in Journal of Semiconductor Devices and Circuits · Vol. 1, Issue 2, 2014 · pp. 1–8 Read article
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Study of Scaling of MOSFET on Various Electrical Characteristics using Silvaco TCAD Tool
Abstract: MOSFETs are the driving work horse of semiconductor industry. Over the years, the MOSFET device density has been continuously increasing owing to the reduction in channel length of MOSFET device. This article discusses the effect of scaling i.e. channel length and gate oxide thickness on various parameters like threshold voltage, transconductance, maximum drain current and subthreshold slope. It is important to consider that with scaling of the channel length; the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 1, 2018 · pp. 11–19 Read article
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Adaptive Neuro-Fuzzy Inference System (ANFIS) Control for Total Harmonic Distortions Reduction of Multi-Pulse STATCOM
Abstract: In this paper proposed ANFIS System is adapted for controllable mitigation of Total harmonic distortions of STATCOM with Multiple pulse technology. Integrated power electronics device, Gate Turn Off (GTO) is used in switching mode with Voltage source convertor during application of distinct load conditions. The proportional and integrated Controller is replaced by a smart fuzzy logic controller that offers great support for harmonic mitigation by redefining the electrical magnitudes of …
Published in Journal of Mechatronics and Automation · Vol. 9, Issue 2, 2022 · pp. 17–31` Read article
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A simulation based study of Capacitor-less Low-Dropout Regulator (LDO)
Abstract: Low-dropout (LDO) regulators have become an essential part of IC design for managing power consumption, this used large capacitors which increases the pin count and also occupies more space in chip. As the order of electronics items increses the the demand of LDO also increases.This is used used with switching regulators to defeat the value of noise and various unwanted signals and provided a low noise output In this work …
Published in Journal of Microelectronics and Solid State Devices · Vol. 8, Issue 3, 2021 · pp. 11–15 Read article
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A Transformer-based Multilevel Inverter with Lesser Components
Abstract: This paper presents a multilevel inverter topology with lesser number of components than a conventional multilevel inverter, thereby reducing the overall cost of the same. Here, a nine-level transformer-based multilevel inverter topology is proposed which uses only 8 switches while a conventional transformer-less multilevel inverter uses 16 switches for achieving the same voltage level. The structure consists of a single dc source feeding two standard H-bridges. The process of intermediate …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 1–12 Read article
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Current Fed Push-Pull Converter for High Voltage Gain Applications
Abstract: AbstractAn isolated high step up voltage gain with appropriate duty ratio with application on energy storage system is proposed. As push pull converters are step down converters, here, this topology will help in step up the voltage. This converters semiconductor device maintains zero current switching (ZCS). Push pull converter has only two devices with common ground with source requiring simple gate driving circuitry.Keywords: Current fed push-pull, variable frequency modulation, zero …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 2, 2018 · pp. 33–42 Read article
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Simulation of Three Section Multilevel Inverter with Reduced Range of Switches
Abstract: Because of high generation development, the demand and excellent of electric strength ishigher than earlier than. Furthermore, due to the advancement of semiconductor, thespecification of electricity devices and strength conversion method turn out to be stricter. Oneof the energy converters that may remodel DC to AC is called inverter. An inverter is the intermedium to transmit the electricity to other electric device such as an uninterruptibleelectricity supply, servo motor, air-conditioner …
Published in Journal of VLSI Design Tools and Technology · Vol. 10, Issue 1, 2020 · pp. 15–36 Read article
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Influence of Graded Channel on Performance of Symmetric Double Material Gate Insulator FDSOI MOSFET
Abstract: Abstract: In this paper, we investigate the effect on the linearity, analog and RF performance of graded channel in case of hetero-gate-dielectric FDSOI MOSFET with higher doping at source end and low doping at drain end. The major figure of merits (FOMs) studied are on-state drive current (ION), transconductance (gm), total gate capacitance (Cgg), cut-off frequency (fT), higher order derivative of transconductance (gm’, gm’’), intermodulation distortion (IMD3) and third- order …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 1, 2019 · pp. 12–17 Read article
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Analysis of Cascaded Multilevel Inverter Induction Motor Drives
Abstract: The goal of this thesis is to use harmonic analysis to learn more about the performance of various cascaded multilevel inverters. To handle the high power demands of large electric drives and utility applications, innovative power electronics converters are required. As a result, in high power and medium voltage conditions, multiple power converter structures have been offered as an option. A multilayer converter not only achieves high power ratings, but …
Published in Journal of Microwave Engineering and Technologies · Vol. 8, Issue 3, 2021 · pp. 22–42 Read article
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On a Nanocomposite Metal Oxide Thin-film Transistor with Nanofilm Gate Dielectric Material: Material Chemistry, Sol–Gel Process and Electronic Worthiness
Abstract: ABSTRACT : ILO based MOTFT is fabricated with PBZ gate dielectric. PBZ is formed over doped Si substrate by cheap sol-gel process. Thin film PBZ is analysed with XRD, UV-Vis and AFM. IZO is used as bottom gate to contact TFT. This device needs only 5V as operating voltage, and so is good for lower electronics <40V. It shows excellent e-mobility 4.5cm2/V/s, with on/off ratio 5x105 and sub-threshold swing 0.35V/decade.
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 6, Issue 3, 2019 · pp. 8–12 Read article
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GaN-based Double Gate MOSFET (DG-MOSFET)
Abstract: AbstractGaN is auspicious for high-power, high-temperature devices because of its large bandgap, and high saturation velocity compared with Si. Gallium nitride (GaN) based devices are expected to play an important role to develop the next-generation devices. The performance of GaN-based double gate (DG) MOSFETs have been explored with gate length (Lg) 10.6 nm. The ON-current (ION) and OFF-current (IOFF) are found to be 8.11´10–3 and 6.38605´10–9A/µm respectively, respectively with an …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 24–28 Read article
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Detection of Fault and Protection of Faulted Distribution Feeder with Field Programmable Gate Array Using State Diagrams
Abstract: A hardware-efficient algorithm for fast fault-detection in feeders radiating out of a distribution substation and its subsequent clearance from the system for safe operation of the healthy parts has been presented in the paper. State diagrams used to design the circuit.The general purpose SPARTANE 3AN FPGA kit has been employed for developing the protective over-current relay. All the coding has been done using the hardware description language VERILOG. To avoid …
Published in Journal of Microcontroller Engineering and Applications · Vol. 2, Issue 2, 2015 · pp. 5–12 Read article