Search
45 articles for “CMOS”
-
Development of Polymer Based SRAM Cell with Enhance Low Power Performance
Abstract: Low-power memory technologies are in high demand with the rapid growth of portable electronics and energy-efficient computing systems. Static random-access memory (SRAM) plays a crucial role in processors, cache memories, and system-on-chip applications due to their speed and reliability. Static Random Access Memory (SRAM) is typically implemented using complementary MOS (CMOS) technology, which integrates both PMOS (P-channel Metal–Oxide–Semiconductor) and NMOS (N-channel Metal–Oxide–Semiconductor) transistors. However, as technology scales to deep submicron …
Published in Journal of Polymer & Composites · Vol. 14, Issue 1, 2026 · pp. 1439–1448 Read article
-
A well-planned strategy for a career path in VLSI design
Abstract: Very Large Scale Integration (VLSI) design is still one of the most active and important areas of the semiconductor industry. It is behind new developments in AI, 5G, automotive electronics, and high-performance computing. As companies like Intel, TSMC, and NVIDIA work to improve advanced-node technology, the need for qualified VLSI engineers is growing. However, people who want to work in this industry typically don't know what technical skills, tools, and …
Published in Journal of VLSI Design Tools and Technology · Vol. 16, Issue 1, 2026 · pp. 28–39 Read article
-
An Efficient Counter Using Modified Upper and Lower SVL Techniques and TSPCL
Abstract: Low power VLSI has emerged as the fundamental building block of the modern electronic era. This leads to a substantial paradigm shift where both power dissipation, performance and area of utmost importance. In the earlier time of fabrication, power dissipation was mainly neglected due to low device density and low operating frequency needed for computation. But in modern technological era, the need for high device density, higher operating frequency, proliferation …
Published in Research & Reviews : Journal of Physics · Vol. 13, Issue 2, 2024 · pp. 37–43 Read article
-
Comparison Analysis of Transformer Boosting and Induced Degeneration Topology Design of LNA for Millimeter Wave Frequency Range Using Polymeric Substrates
Abstract: In this study, a comparison between transformer boosting and source degeneration LNA topologies is conducted using two polymeric substrates—Polyimide (PI) and Liquid Crystal Polymer (LCP)—for millimeter-wave (mmWave) applications. With growing interest in flexible and high-frequency electronics, polymeric materials offer unique advantages such as low dielectric constants, mechanical flexibility, and thermal stability. The analysis explores gain, return loss, and noise figure performance while evaluating the influence of dielectric properties on the …
Published in International Journal of Electrical and Communication Engineering Technology · Vol. 3, Issue 2, 2025 · pp. 1–24 Read article
-
Physics of Semiconductors and Electronic Circuits
Abstract: This study talks about the basic ideas behind semiconductor physics and how important they are for making and running modern electronic circuits. It starts with a look at intrinsic and extrinsic semiconductors, going into how charge carriers move, energy band theory, and how doping affects how well the electricity flows. Next, the conversation turns to semiconductor devices like diodes, bipolar junction transistors (BJTs), and field-effect transistors (FETs). The focus is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 2, 2025 · pp. 9–17 Read article
-
Current Controlled Oscillator Using FinFET
Abstract: A current-controlled oscillator using 18 nm FinFET technology is proposed in this study which consists of a Current Controlled Differential Difference Current Conveyor (CCDDCC) block to control the current. FinFET technology has better scalability and lower leakage current compared to traditional CMOS, which allows it to surpass the obstacles faced by CMOS-based oscillators. The suggested oscillator is suitable for electronic applications such as Phase-Locked Loop (PLL) systems, radio frequency (RF) …
Published in Journal of Semiconductor Devices and Circuits · Vol. 12, Issue 3, 2025 · pp. 17–28 Read article
-
A Review of Electrical Conduction, Optical Sensing, and Semiconductor Device Innovations
Abstract: Electrical conduction and semiconductor device technologies form the backbone of modern electronic and sensing systems. This review presents a comprehensive analysis of conduction mechanisms across different materials, including conductors, semiconductors, and insulators, with particular emphasis on charge carrier behavior, resistivity, and energy band structures. The study highlights how variations in material properties and external conditions influence electrical performance and device efficiency. The paper further explores advancements in semiconductor devices, focusing …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 Read article
-
Design of Decoder Using Domino Logic Circuit for VLSI
Abstract: Dissipation of power from a circuit is the major issue in the design of any VLSI circuit, which decreases the life span of a device/system. NMOS and PMOS circuits are very slow while switching the state from low to high. The speed of the circuit can be increased by decreasing resistance. This process in turn increases the static power dissipation. So, because of these disadvantages, CMOS circuits are used in …
Published in Journal of VLSI Design Tools and Technology Read article
-
Spintronic Logic Circuits for Ultrafast Processing
Abstract: Spintronic logic has emerged as one of the most promising post-CMOS paradigms capable of addressing the speed, density, and energy challenges of deeply scaled silicon technologies. By relying on the intrinsic properties of electron spin and magnetization dynamics, spintronic devices—particularly Magnetic Tunnel Junctions (MTJs), Spin-Transfer Torque (STT), and Spin–Orbit Torque (SOT) structures—enable ultrafast, non-volatile data processing with significantly reduced energy consumption. Despite remarkable device-level advancements, circuit- level realization of high-speed, …
Published in International Journal of VLSI Circuit Design & Technology · Vol. 3, Issue 2, 2025 · pp. 35–43 Read article
-
High Performance Multi-Valued Logic (MVL)Gate Design Using FinFET
Abstract: CMOS scaling faces challenges such as leakage, power dissipation, and short channel effects. Multi-Valued Logic (MVL) offers higher information density and reduced interconnections. This work presents a FinFET-based MVL gate design that improves electrostatic control, switching speed, and reliability. Simulation results confirm reduced leakage power and enhanced performance compared to conventional logic. The proposed architecture demonstrates scalability for advanced technology nodes. It also shows potential for low-power applications in portable …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 34–45 Read article
-
Photonic-Assisted Spintronic Solid-State Switching Model for High-Speed Memory Devices
Abstract: The rapid advancement of high-speed computing and data-centric applications has intensified the demand for energy-efficient and ultra-fast memory technologies. This paper proposes a Photonic-Assisted Spintronic Solid-State Switching Model for next-generation high-speed memory devices. The proposed framework integrates photonic excitation mechanisms with spintronic switching dynamics to enhance data transfer speed, minimize switching delay, and reduce power dissipation in solid-state memory architectures. By combining optical pulse-assisted spin polarization with magnetic tunnel junction-based …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
-
Short Report to Describe the Surface-driven Microfluidic Flow in Fluid Mechanics
Abstract: In this short report, a brief review on surface-driven microfluidic flow is provided. Also, the maskless lithography and indirect bonding technique are used to fabricate a single SU-8 based glass microfluidic device. Dyed ethylene glycol is prepared as working liquid to test the fabricated device. The surface-driven microfluidic flow of dyed ethylene glycol is recorded by a CMOS camera catching 25 frames per second with a corresponding time-scale resolution of …
Published in Recent Trends in Fluid Mechanics Read article
-
Semiconductor Physics and Micron Scale Fluid Mechanics towards the Microelectromechanical Systems Associated with Nanotechnology
Abstract: Interrelations among semiconductor physics, microfluidics, nanofluidics and nanotechnology are briefly described. A single microchannel bend is designed and fabricated by author using the maskless lithography, hot embossing lithography and direct bonding. Dyed water is the selected and prepared working liquid in this work. Surface-driven (passive) capillary flow of working liquid is recorded in the fabricated microchannel bend using a CMOS camera. This work may be useful in applied chemistry.
Published in Research & Reviews : Journal of Physics Read article
-
High-speed Data Converter Architectures: Latched Comparator Design & Performance Comparison
Abstract: This paper focuses on the design and optimization of latch comparators for high-speed data converter applications. The performance of different comparator architectures is compared in terms of speed, power consumption, and noise performance. The proposed latch comparator architecture uses a preamplifier to boost gain and sensitivity, and a latch to store the output signal. The latch comparator design is optimized for low power consumption and high speed, and is implemented …
Published in Journal of VLSI Design Tools and Technology · Vol. 14, Issue 1, 2024 · pp. 23–32 Read article
-
A Study on Polymer-Based FinFET Applications and Logic Circuit Implementation with FinFET
Abstract: Nano devices play a crucial role in the semiconductor industry and can work as the solution for the problems like scaling of MOSFET. The FinFET can serve as the substitute of bulk CMOS in nanoscale. It mainly consists of two gate terminals which can be either shorted or kept independent.The shorted gate (SG-FinFET) configuration provides higher Ion and Ioff whereas the Independent Gate (IG-FinFET) configuration reduces the transistor count and …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 312–340 Read article
-
A Neuromorphic-Inspired, Low-Power VLSI Architecture for Edge AI in IoT Sensor Nodes
Abstract: As the proliferation of Internet of Things (IoT) devices continues to rise, there is an increasing demand for real-time, energy-efficient artificial intelligence (AI) processing directly at the network edge. Traditional edge AI accelerators, often based on deep learning models like convolutional neural networks (CNNs), struggle to meet the ultra-low-power requirements of battery-constrained IoT sensor nodes. In response to this challenge, this study introduces a neuromorphic-inspired, low-power very- large-scale integration (VLSI) …
Published in Journal of Microelectronics and Solid State Devices · Vol. 12, Issue 2, 2025 · pp. 41–47 Read article
-
A High Frequency and Power Efficient Memristor Emulator and Its Application
Abstract: This study presents a small, energy-efficient memristor emulator made for use at high frequencies. The proposed circuit has a simple design that only includes three n-type MOSFETs and a grounded capacitor. This means that there is no need for active components or DC biasing. This streamlined architecture not only makes things easier, but it also uses very little power, with dynamic and static power measured at 15.82 μW and 65.6 …
Published in International Journal of Electrical and Communication Engineering Technology · Vol. 3, Issue 2, 2025 · pp. 45–52 Read article
-
Employment of Solid-State Technology in Sensor Design: A Study
Abstract: The rapid evolution of sensor technologies has been driven by the demand for more precise, durable, and compact systems to meet the needs of modern industries, healthcare, and consumer electronics. Solid state technologies have emerged as a transformative force in sensor design, offering unprecedented performance, reliability, and integration potential. Unlike traditional sensors, which often rely on mechanical, electrochemical, or piezoelectric principles, solid state sensors leverage the intrinsic properties of materials …
Published in International Journal of Solid State Innovations & Research · Vol. 3, Issue 2, 2025 · pp. 31–41 Read article
-
The Next Era of Solid-State Innovation: Beyond Silicon
Abstract: The semiconductor industry is getting close to the physical and economic boundaries of silicon-based technology. A new era of solid-state innovation is beginning. Beyond Silicon: The Next Era of Solid-State Innovation looks at the materials, device layouts, and manufacturing methods that are about to change the way electronics and energy work. The article talks about improvements in wide- and ultra-wide-bandgap semiconductors, two- dimensional materials, and quantum and neuromorphic systems that …
Published in International Journal of Solid State Innovations & Research · Vol. 3, Issue 2, 2025 · pp. 19–23 Read article
-
Synergistic Integration of MEMS and Spintronics for Precision Data Analytics in Cheminformatics
Abstract: The transformational potential of merging spintronics and Micro-Electromechanical Systems (MEMS) technologies in cheminformatics is investigated in this work. Recent advancements in MEMS, particularly through the use of microbeam sensors and accelerometers, enhance the precision of data collection and processing, especially in biomedical applications such as drug delivery systems and chemical sensing. The synchronization of oscillations in MEMS devices leads to improved reliability and data accuracy, enabling the development of sophisticated …
Published in International Journal of Cheminformatics · Vol. 2, Issue 1, 2024 · pp. 20–26 Read article