A Field Effect Transistor Synthesized using Multiple Al-doped ZnO Nanorods

Manoj Kumar; Vijay Kumar Lamba

doi:10.37591/rrjophy.v7i2.938

Abstract

The different Al-doped ZnO nanorods and a SiO2 gate insulator has been used to make nanorod ﬁeld-effect transistors (FETs). The utilization of numerous nanorods gives higher on-current without signiﬁcant declination in threshold voltage move and subthreshold inclines. It has been recorded that the on-current of the different ZnO nanorod FETs increases around directly with the quantity of nanorods, with on-current flows of roughly 1.8uA for each nanorod and little change in off-current roughly 4.2 pA. The subthreshold slopes and on–off current ratio of 5x102 regularly enhance as the quantity of nanorods inside the channel is expanded, reﬂecting great consistency of properties from nanorod to nanorod. The electrical and optical properties were studied by using deposition parameters and the optimal conditions were defined. A comparison between conventional and Al-doped ZnO nanorods FETs shows that a conventional nanorod FET has a low conductivity in contrast with Al-doped ZnO nanorods FET. It has also been shown that temperature-dependent current-voltage relationship of single ZnO nanorod FETs affects the actuation energy of the drain current at gate voltages both above and below a certain limit. Keywords: Nanorod, transistor, ZnO, Al-dopantCite this ArticleManoj Kumar, Vijay Kumar Lamba. A Field Effect Transistor Synthesized using Multiple Al-doped ZnO Nanorods. Research & Reviews: Journal of Physics. 2018; 7(2): 72–79p