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A Field Effect Transistor Synthesized using Multiple Al-doped ZnO NanorodsBy Manoj Kumar, Vijay Kumar Lamba
Abstract: The different Al-doped ZnO nanorods and a SiO2 gate insulator has been used to make nanorod field-effect transistors (FETs). The utilization of numerous nanorods gives higher on-current without significant declination in threshold voltage move and subthreshold inclines. It has been recorded that the on-current of the different ZnO nanorod FETs increases around directly with the quantity of nanorods, with on-current flows of roughly 1.8uA for each nanorod and little change …
Published in Research & Reviews : Journal of Physics · Vol. 7, Issue 2, 2018 · pp. 72–79 Read article →