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12 articles for “carbon nanotube field effect transistor”
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Electrical Performance of the Silicon Nanowire Double Gate FET
Abstract: Silicon nanowire (SiNW) metal-oxide-semiconductor field-effect transistor (MOSFET) is a promising candidate of future CMOS device for further scaling. As the cross-sectional dimensions of SiNW channel is very small, cross-sectional shapes should affect electrical characteristics of SiNW FETs. In this work, effects of cross-sectional shapes of gate stack formation on (i) properties of double gate of SiNW FET; (ii) carrier transport properties including on-current, effective carrier mobility and inversion charge density; …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 22, Issue 3, 2020 · pp. 5–11 Read article
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Power-delay Product Optimal Design of Sequential Circuits Using Carbon Nanotubes
Abstract: This paper presents a power-aware high-performance design of ternary combinational and sequential circuits based on carbon nanotube field effect transistor (CNFET) using ternary logic. Carbon nanotube based field effect transistor (CNFET) are being studied extensively as a possible and promising choice for nanoscale integration and as successor to complementary metal oxide semiconductor (CMOS) devices. Ternary logic circuit has attracted substantial interest due to its simplicity, energy efficiency, and reduced interconnect …
Published in Journal of VLSI Design Tools and Technology · Vol. 3, Issue 3, 2013 · pp. 27–36 Read article
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Carbon Nanotube Transistor Based Novel Ring Oscillator with Minimum Power Consumption at 32 nm Technology Node
Abstract: In this article an analysis of carbon nanotube field effect transistor based ring oscillator is performed. After analysis it was found that carbon nanotube transistor consumes less power in comparison to silicon transistor. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 51–54 Read article
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Carbon Nanotube Transistor Based Novel Ring Oscillator with Minimum Power Consumption at 32 nm Technology Node
Abstract: In this article an analysis of carbon nanotube field effect transistor based ring oscillator is performed. After analysis it was found that carbon nanotube transistor consumes less power in comparison to silicon transistor. CNFET is one possible candidate to substitute silicon-based integrated circuit (IC) technology, as the performance increase of conventional transistors witnessed during the last decades will arrive at its ultimate limits in the near future. Its present progress …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 51–54 Read article
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A Review: Carbon Nanotube Structures, Properties, Growth and Applications
Abstract: In this paper, basic issues regarding carbon nanotube are discussed since CNT is the soul of carbon nanotube field-effect transistor, which is one of devices for future nanoelectronic applications. In this paper, the structure, properties, growth process and applications of carbon nanotube are presented in small and easy description. This paper investigates the bits of knowledge of the most exceptional use of carbon nanotube in electronic field, the carbon nanotube …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 18, Issue 3, 2016 · pp. 10–22 Read article
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Ternary Logic Design Approach - From CMOS to CNTFET
Abstract: The goal of this review is to offer a broad study on the ternary logic designs based on CMOS (complementary metal-oxide-semiconductor) and CNTFET (carbon nanotube field effect transistor) suitable for energy efficient and high-performance VLSI design. Performance investigation of the ternary logic-based designs will be the primary emphasis as the ternary logic is a good substitute for the conventional binary logic among all the multiple-valued logics because it permits simple …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 8, Issue 2, 2018 · pp. 20–30 Read article
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Design of a Multipurpose Ternary Arithmetic Circuit Using CNTFET
Abstract: AbstractIn this paper, a multipurpose ternary arithmetic circuit is presented for ternary processors based on carbon nanotube field effect transistors (CNTFETs). Both addition and subtraction can be performed using same circuit’s configuration, which is the special feature of the proposed circuit. The combination of pseudo and complimentary logic structure are employed to blend the binary and ternary logic techniques. The propagation delay and power delay product are 139.5 pico second …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 13–24 Read article
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Review Paper To Design a Low Power CNTFET Based XOR Gate
Abstract: The continuous scaling down of Silicon technology leads to various critical challenges and reliability issues such as short channel effect, high leakage current, interconnect problems, etc. CNTFET is the most probable substitutes to traditional MOSFET. The CNTFET device based circuits portray advantages with its better control over the device channel, reduced leakage current, reduced short channel effects. The CNTFET based XOR gate circuits incur the minimum power and energy dissipation. …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 48–53 Read article
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Energy Minimization by Nanotechnology Structures based on CNTFET GaAs
Abstract: AbstractIn this study, we will compare the carbon nanotube-based field effect transistors with the conventional MOSFET (metal–semiconductor field-effect transistor) on the basics of various parameters like effect of temperature, its channel length, its capacitance, and its operating frequency. The purpose of this comparison between these two transistors is that due to the reason of scaling down of size of the transistor in nanometers so that more components can be fabricated …
Published in Journal of Web Engineering & Technology · Vol. 6, Issue 3, 2019 · pp. 23–28 Read article
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Optimizing the Ratio of Number of Tubes in PCNTFET to NCNTFET for Digital Circuits
Abstract: AbstractCarbon nanotube Field Effect Transistors (CNTFET) offer various benefits as compared to other FETs. Many circuits can be constructed using PCNTFETs (P-type CNTFET) and NCNTFETs (N-type CNTFET) similar to the PMOS and NMOS of the CMOS technology. The CNTFETs employ carbon nanotubes in the channel of the device to provide a path for the ballistic conduction of electrons. The different ratios of number of tubes in channel of the PCNTFET …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 1, 2018 · pp. 34–40 Read article
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Synthesis, Properties and Applications of Amorphous Carbon Nanotube and MoS2 nanosheets: A Review
Abstract: Recently, carbon nanotube have been showing great interest in the field of nanotechnology for its exceptional physical, electronic properties. The synthesis procedure of crystalline carbon nanotube are immensely tough for which researchers are focused on amorphous carbon nanotube. Furthermore the presence of dangling bonds in amorphous carbon nanotube makes it easily reactable with other nanomaterial to form into nanohybrids. This nanohybrids are quite challengeable to crystalline carbon nanotube in various …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 21, Issue 1, 2019 · pp. 36–52 Read article
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Nanoelectronics Based on Carbon Nanotubes
Abstract: Nanoelectronics, the study and application of electronic components and systems at the nanometer scale, plays a pivotal role in advancing modern technology toward faster, smaller, and more energy-efficient devices. Among the various nanomaterials explored for these applications, carbon nanotubes (CNTs) have emerged as one of the most promising candidates due to their exceptional electrical conductivity, mechanical strength, and thermal stability. This project report presents an in-depth exploration of the role …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 15, Issue 3, 2025 · pp. 40–53 Read article