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7 articles for “TCAD”
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
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Comparative Study of Drain Current of Symmetric and Asymmetric DG-MOSFET with Simulation in Silvaco TCAD Software
Abstract: One of the most attractive and promising devices for the nanoscale devices is the double gate MOSFET. The double gate MOSFET can control the Si channel very efficiently and it chooses a very small width of the Si channel. It controls the Si channel by applying gate contact to either side of the channel. The idea of controlling the S channel in such a way reduces the short channel effects …
Published in Journal of Semiconductor Devices and Circuits Read article
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Performance Analysis of Dual Junction Solar Cell Devices utilizing Subcells of In0.51Ga0.49P and GaAs to Study Key Solar Cell Parameters via TCAD based Simulation
Abstract: In the present work, a multi-junction solar cell was designed to obtain better performance over single-junction solar cells. The proposed structure is composed of different layers of diverse semiconductor materials stacked on each other. Here, an In0.51Ga0.49P/GaAs double-junction solar cell was outlined as having a distinctive composite material (GaAs) as the tunneling junction. To optimize the solar cell's effectiveness, In0.47Ga0.15Al0.37P was used in the window layer and the back-surface field …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 829–837 Read article
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Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET
Abstract: we carry out the performance of symmetric oxide (HfO2+HfO2) and asymmetric oxide (SiO2+HfO2) n-type junction less field-effect transistor (JLFET) based on two- dimensional Poisson equation. This study is accomplished by simulating a symmetric and asymmetric double gate JLFET on Sentaurus, Technology Computer Aided Design (TCAD) simulator for Silicon (Si) material at room temperature and varying temperature in between 300-360 k. Based on device simulation we find that the asymmetric oxide …
Published in Journal of Semiconductor Devices and Circuits Read article
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Investigating the effect of Anodes workfunction on the Opto-electronics Performance of Organic Light Emitting Diode
Abstract: The research aims to assess the performance of organic light-emitting diodes (OLEDs) by exploring how various anode materials affect their optoelectronic properties. OLEDs are crucial for modern displays and lighting, and their efficiency and functionality are heavily influenced by the materials used in their design.This study examines four different anode materials: Indium Tin Oxide (ITO), Zinc Oxide (ZnO), Aluminum-doped Zinc Oxide (AZO), and Poly(3,4-ethylenedioxythiophene) Polystyrene Sulfonate (PEDOT: PSS). These materials …
Published in Research & Reviews : Journal of Physics · Vol. 13, Issue 2, 2024 · pp. 27–37 Read article
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Influence of Dielectric and Active layer Thickness on MgZnO Thin Film Transistor Electrical Characteristics
Abstract: From last decades, Thin Film Transistors Technology uses low-k dielectric material as an insulator. Insulator thickness plays an important role in device dimension. The insulating layer also known as the gate oxide separates the gate electrode from the channel region of the transistor. If the insulating layer is too thin, there is a greater chance that electrons can tunnel through the oxide layer, leading to leakage current. To mitigate this …
Published in Journal of Polymer & Composites · Vol. 11, Issue 5, 2023 · pp. 17–26 Read article
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Fabrication, Numerical Simulation and Compact Modeling of Ph-BTBT-C10 Organic Thin Film Transistor
Abstract: Flexible and cost-effective electronics have been necessitated by the advent of organic thin-film transistors (OTFTs). This study aims to study the performance of OTFT using a 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10) organic semiconductor. The paper also explore accurate device modeling for technology optimization and circuit design that supports device improvement. This research includes device fabrication, numerical simulation using TCAD, compact modeling, and parameter extraction. By combining temperature-dependent bandgap narrowing with existing theories, this …
Published in Journal of Polymer & Composites · Vol. 12, Issue 5, 2024 · pp. 1–18 Read article