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7 articles for “MOSFET-only design”
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An Overview on MOSFET based Sensor Design
Abstract: In the past two decades the MOSFET has transformed from a simple switch in digital logic to an analog powerhouse that can be cofabricated with the sensing material on a single chip. MetalOxideSemiconductor FieldEffect Transistors (MOSFETs) have silently become the beating heart of modern sensor platforms, translating the faint whispers of physical, chemical, and biological phenomena into robust electrical signatures. This abstract surveys the latest advances that have turned the …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 20–26 Read article
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A High Frequency and Power Efficient Memristor Emulator and Its Application
Abstract: This study presents a small, energy-efficient memristor emulator made for use at high frequencies. The proposed circuit has a simple design that only includes three n-type MOSFETs and a grounded capacitor. This means that there is no need for active components or DC biasing. This streamlined architecture not only makes things easier, but it also uses very little power, with dynamic and static power measured at 15.82 μW and 65.6 …
Published in International Journal of Electrical and Communication Engineering Technology · Vol. 3, Issue 2, 2025 · pp. 45–52 Read article
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A Study on Polymer-Based FinFET Applications and Logic Circuit Implementation with FinFET
Abstract: Nano devices play a crucial role in the semiconductor industry and can work as the solution for the problems like scaling of MOSFET. The FinFET can serve as the substitute of bulk CMOS in nanoscale. It mainly consists of two gate terminals which can be either shorted or kept independent.The shorted gate (SG-FinFET) configuration provides higher Ion and Ioff whereas the Independent Gate (IG-FinFET) configuration reduces the transistor count and …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 312–340 Read article
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
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Cold Plasma Enhanced Medical Waste Disposal System
Abstract: Biomedical waste generated in hospitals and laboratories often contains infectious materials that must be treated before disposal to prevent environmental contamination and health risks. Conventional treatment methods such as Incineration are effective but require high temperatures and may produce harmful emissions if not properly controlled. This paper presents the design of a compact biomedical waste disposal system based on Cold Plasma technology. Plasma is generated using a high- voltage circuit …
Published in Journal of Instrumentation Technology & Innovations · Vol. 16, Issue 2, 2026 Read article
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A Review of Electrical Conduction, Optical Sensing, and Semiconductor Device Innovations
Abstract: Electrical conduction and semiconductor device technologies form the backbone of modern electronic and sensing systems. This review presents a comprehensive analysis of conduction mechanisms across different materials, including conductors, semiconductors, and insulators, with particular emphasis on charge carrier behavior, resistivity, and energy band structures. The study highlights how variations in material properties and external conditions influence electrical performance and device efficiency. The paper further explores advancements in semiconductor devices, focusing …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 Read article
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A Review on Solar Multilevel Inverter for the Production of Free Energy Due to the Structure with Long-life Feature
Abstract: Multilevel inverters play a major role in medium voltage, high power and renewable applications. It is also used in certain applications where high switching frequency, and high output voltage gain are required. The switching transient period of a MOSFET should be minimal because a high dv/dt rate could result in permanent damage to the MOSFET. The harmonics present could cause many problems and so it has to be minimized. The …
Published in Journal of Nuclear Engineering & Technology · Vol. 14, Issue 1, 2024 · pp. 13–18 Read article