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6 articles for “Hall voltage”
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Investigate the origin of the Hall Effect
Abstract: The Hall Effect was first recorded by a scientist named E. H. Hall. Detailed information on how the Hall effect is produced and what needs to be done to understand it is also provided here. After a brief introduction of the Hall operating rule and the basic characteristics of Hall devices, the most recent developments in the field are reviewed. It outlines: better information about the influence of device geometry …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 11, Issue 2, 2021 · pp. 8–13 Read article
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Voltage Sag Mitigation Using DVR and Ultra Capacitor
Abstract: Due to the rising integration of renewable energy sources into the power system, power quality issues have recently become more significant. Voltage sags and swells are among the biggest issues with a power system, and a lot of research has been done to try to solve these issues. Equipment for power conditioning can enhance the quality of the power. Dynamic voltage restorers (DVR) are used to shield sensitive loads from …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 3, 2022 · pp. 21–31 Read article
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Analysis of MEMS Electrostatic Actuator using SIMULINK Software Tool
Abstract: The study includes Micro-Electro-Mechanical System (MEMS) electrostatic actuator using SIMULINK software tool considering equivalent mathematical model. This paper deals with the equation of motion, electrostatic force for the analysis of pull in voltage and displacement of an electrostatic cantilever with respect to the changes in applied force (voltage). Considering these equation, we have developed SIMULINK model to analyze pull in voltage, and displacement for the various applied input voltage.Keywords: MEMS, …
Published in Journal of Instrumentation Technology & Innovations · Vol. 5, Issue 1, 2015 · pp. 32–35 Read article
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Analysis of Pull-in Voltage with Respect to Changes in Dielectric Material and their Thickness
Abstract: Micro Electromechanical Systems (MEMS) actuators experience pull-in effect in their actuation range. MEMS actuating elements are thin parallel plate capacitor electrodes separated with air gap. Parallel plate electrostatic micro actuators are known to have the pull-in effect, where electrostatic attractive force exceeds the mechanical restoring force of the suspending spring, and that the movable plate spontaneously pulled into physical contact with the opposite electrode. In our model the effect of …
Published in Recent Trends in Electronics Communication Systems · Vol. 2, Issue 1, 2015 · pp. 1–5 Read article
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Investigation of the Hall and Nernst-Ettingshausen Effects in Diluted Magnetic Semiconductors
Abstract: This review explores the Hall and Nernst-Ettingshausen effects in various magnetic systems, including diluted magnetic semiconductors (DMS), topological insulators, superconductors, and novel composite materials. In DMS, the interplay of ferromagnetism and magnetic impurities introduces unique transport behaviors, particularly influencing the anomalous Hall effect (AHE) and thermomagnetic phenomena. We also examine the Nernst-Ettingshausen effect (NE) in topological insulators and superconductors, revealing the influence of band topology and vortex-like excitations. Special attention …
Published in Research & Reviews : Journal of Physics · Vol. 13, Issue 3, 2024 · pp. 1–5 Read article
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article