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Research & Reviews : Journal of Physics Review Article

Investigation of the Hall and Nernst-Ettingshausen Effects in Diluted Magnetic Semiconductors

  1. B. Goswami Metallurgical Engineering, RVS College of Engineering and Technology

Abstract

This review explores the Hall and Nernst-Ettingshausen effects in various magnetic systems, including diluted magnetic semiconductors (DMS), topological insulators, superconductors, and novel composite materials. In DMS, the interplay of ferromagnetism and magnetic impurities introduces unique transport behaviors, particularly influencing the anomalous Hall effect (AHE) and thermomagnetic phenomena. We also examine the Nernst-Ettingshausen effect (NE) in topological insulators and superconductors, revealing the influence of band topology and vortex-like excitations. Special attention is given to the thermoelectric properties of graphene and its potential for tuning electronic transport via gate voltage. Furthermore, we delve into recent advancements in cryogenic applications utilizing NE-based coolers and the emerging field of composite spin-Seebeck effects, demonstrating their promise for efficient thermoelectric power generation. This comprehensive review synthesizes experimental and theoretical developments, emphasizing the significance of these effects in advancing future electronic and energy conversion technologies.

Keywords

References (1)

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