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6 articles for “GPDK”
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Designing and Testing of various types of SRAM topologies with 90nm Technology
Abstract: VLSI technology provides a way for designing compact devices which are useful to human for leading their day to day, the advancement in the technology provides high speed and power consuming appliances. In this category, intend to design an application with high data rate and low power, memory efficient device and Static Random-Access Memory (SRAM) is structured. Improvement in the technology comprises of scaling down the design process and impact …
Published in Journal of Electronic Design Technology · Vol. 13, Issue 1, 2022 · pp. 12–16 Read article
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Methodology of Standard Cell Library Design in .LIB Format
Abstract: The importance of standard cell library design methodology is growing with very-large-scale integration (VLSI) technology advancement due to its usage in VLSI EDA synthesis flows. In this paper, to best of our knowledge and information in any published literature no systematic method of standard cell and creating appropriate co-laterals. In this paper the standard cell design methodology, layout topology, methodology for creating characterized timing table has been developed using 250 …
Published in Journal of VLSI Design Tools and Technology · Vol. 4, Issue 1, 2014 · pp. 30–38 Read article
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Design and Validation of Low Power High Speed area effective comparator using CMOS Technology
Abstract: The most fundamental arithmetic comparisons in a digital comparator involve comparing two numbers that are greater than, less than, or equal to each other. While doing enormous level arithmetic comparisons, a digital comparator needs more space, which results in higher power consumption and a delayed response. This can be solved by using N-bit comparator with two modules using 45GPDK CMOS Technology. An N-bit comparator can operate at extremely high speeds …
Published in Recent Trends in Electronics Communication Systems · Vol. 10, Issue 2, 2023 · pp. 20–29 Read article
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Memristor Modelling for Common Source Amplifier Using 180 nm Technology
Abstract: The objective of this research paper is on memristor modeling for common source amplifier circuit using cadence virtuoso tool at gpdk 180 nm technology. A memristor is the fourth element count after resistor, inductor and capacitor in fundamental electrical circuits assumption is proposed by Leon Chua, its characteristics is based on already occurred principles of voltages (V), current (I), flux (ᵩ) and charge (q). Ohm’s law states relation voltage to …
Published in Journal of VLSI Design Tools and Technology · Vol. 5, Issue 3, 2015 · pp. 45–54 Read article
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Characterization of a Single-Ended Schmitt-Trigger based 9T SRAM Cell
Abstract: Data stability is a prime concern in submicron regime. This work presents a single-ended Schmitt- trigger (ST) based 9T static random-access memory (SRAM) cell. Proposed design provides enhanced read stability as it uses ST based inverters. Low power dissipation is achieved by employing just a single bit line. Simulation is carried out on gpdk 180nm CMOS technology on Cadence. Proposed design offers 1.36x improvement in read static noise margin (RSNM) …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 26–31 Read article
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High Speed and Low Power Basic Digital Logic Gates, Half-Adder and Full-Adder Using Modified Gate Diffusion Input Technology
Abstract: In this paper, modified gate diffusion input (MGDI) technology has been used for the design and implementation of digital integrated circuits (ICs). In today’s digital world, IC plays a vital role in high-performance computing, communication, and many consumer electronics. IC manufacturing technology has scaled down to smaller device dimensions. This scaling has a great impact on the design of digital ICs. The main objective of the IC manufacturing technology is …
Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 1, 2018 · pp. 34–42 Read article