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1862 articles for “electronic”
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Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
Abstract: AbstractA maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction AlGaN/GaN/AlGaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool in this work. The drain current is observed as higher at shorter gate length. The drain current is found as higher at larger aluminium mole fraction. Also, the drain current is found as higher at larger thickness of AlGaN barrier layer. The drain current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 7–17 Read article
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Optimization of FLOTOX in EEPROM Design
Abstract: Abstract: Electrically Erasable Programmable Read-Only Memory (EEPROM) is a non-volatile memory (NVM) which is used in computers, integrated into microcontrollers for smart cards and remote keyless system, and other electronic devices to store relatively small amounts of data but allowing individual bytes to be erased and reprogrammed. Here the sizes of the floating gate & control gate have been altered to find the impacts for programming events and determine the …
Published in Journal of Semiconductor Devices and Circuits · Vol. 6, Issue 1, 2019 · pp. 1–9 Read article
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Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer
Abstract: AbstractIn this work, the simulation studies are performed on high electron mobility transistor (HEMT) structures using the SILVACO-ATLAS software tool. The drain characteristics of HEMT structures is investigated with respect to the Aluminium mole fraction, drain voltage, gate voltage, and gate length at 30 nm thickness of AlGaN nano-layer. The simulation studies on the effect of gate length to control the drain characteristics are a novelty of this work. The …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 8–16 Read article
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Case Study of Multipulse Converter System for IGBT Based Inverter in Induction Melting Furnace
Abstract: AbstractHarmonic mitigation is an important aspect for the smooth operation of modern power electronics converters, medical equipment, and home appliances which are generally fed by a common grid supply. In large power equipment such as induction furnaces, it becomes necessary to reduce or eliminate harmonics from the supply. In order to cater dynamic load cycle during complete melting cycles in induction furnaces, power needs to vary. This can be achieved …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 17–23 Read article
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Emerging Trends in Applications of Semiconductor Alloys in Wireless Communications
Abstract: AbstractArsenide semiconductor alloys provide a natural means of tuning the magnitude of the forbidden gap and other material parameters so as to optimise and widen the application of semiconductor devices. With the advent of small-structure systems, for instance quantum wells and superlattices, the special effects of alloy composition, size, device geometry, doping and controlled lattice strain can be collective to accomplish maximum tunability. In this article, the concepts and ideas …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 1, 2016 · pp. 31–41 Read article
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Digital Front-End Architecture of ECG Acquisition System with 0.5V Supply
Abstract: AbstractDue to the popularity of portable electronic products, low power systems have attracted more attention in recent years. Dynamic power consumption remains to be the biggest contributor to the total power consumption of a hardware design. A new power efficient electrocardiogram acquisition system that uses a fully digital architecture to reduce the power consumption and chip area has been proposed in this paper. The design of analog-to-digital converters (ADCs) is …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 2, 2016 · pp. 11–20 Read article
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Simulation Studies on the Electrical Characteristics of Novel Nanoelectronic AlGaN/GaN/AlGaN Double-Heterojunction HEMTs for Industrial Applications
Abstract: AbstractWe report the drain characteristics of AlGaN/GaN/AlGaN double heterojunction (DH) high electron mobility transistors (HEMTs) with the associated quantum well depths. The drain current is higher corresponding to the larger doping concentration of AlGaN nano-layer. The drain current is higher with the larger gate voltage at any particular drain voltage. The quantum well depth is significantly higher with the increasing doping concentration of AlGaN nano-layer. About the novelty of this …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 6–18 Read article
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Variations of Source Current in the Double-Heterojunction HEMTs
Abstract: AbstractIn this report, we have studied the variations in source current with respect to drain voltage corresponding to the double heterojunction (DH) high electron mobility transistors (HEMTs). Also, the effects of gate voltage and aluminium mole fractions on source current are studied. In this work, the highest source current achieved is 3.3 mA. This work may be useful to design many nanoelectronic HEMTs.Keywords: Source current, drain voltage, gate voltage, mole …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 19–24 Read article
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Study and Analysis on Multi-gate MOSFET Design
Abstract: AbstractMulti-gate MOSFET is the emerging technology that is used in the area of low-power VLSI design. Multi-gate devices provide much better advantages over conventional MOSFET. As less power dissipation, decrease size, and more operational value could be obtained. Multi-gate MOSFET devices also reduce cost of production. Thus, design of electronics devices based on multi-gate technology is beneficial in today’s requirement. Basic MOSFET due to its reduction in size shows short …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 1–7 Read article
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Development and Synthesis of Graphene Based Gas Sensor
Abstract: AbstractGraphene has become a promising material for many different applications, such as nano electronic devices, physical, chemical and biochemical sensors, transparent conductive films, clean energy scavenging and storage devices and nano composite formulation. Recently gas sensing as a critical application intelligent system, is receiving increasing attention in both industry and academia. Sensing application using graphene sheets as transducer have experienced surge of activities in recent years, especially for gas sensing …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 2, 2020 · pp. 13–19 Read article
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Emerging Trends in Applications of Antimonide Semiconductor Alloys in Wireless Communications
Abstract: We investigate inter diffusion in Antimonide alloy hetero structures by means of bright-field transmission electron microscopy (TEM). Samples grown by metal organic molecular beam epitaxy (MOMBE) are subjected to thermal treatment under both In-rich and Sb-rich conditions. Concentration profiles of the group-III elements are determined by evaluating changes of thickness fringes of cleaved 90° wedge specimens on a nanometer scale. We present first results of our inter diffusion experiments and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 1–4 Read article
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Speed Control Using AT89c51 with High Accuracy
Abstract: The aim of developing this project is to control the speed of DC motor. The main advantage in using a DC motor is that the speed-torque relationship can be varied to almost any useful form. To achieve the speed control an electronic technique called pulse width modulation is used which generates high and low pulses. These pulses vary the speed in the motor. For the generation of these pulses, a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 2, 2015 · pp. 28–35 Read article
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A Programmable Logic Controller Implicated to Control Speed
Abstract: The aim of developing this project is to control the speed of DC motor. The main advantage in using a DC motor is that the speed-torque relationship can be varied to almost any useful form. To achieve the speed control an electronic technique called pulse width modulation is used which generates high and low pulses. These pulses vary the speed in the motor. For the generation of these pulses a …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 3, 2015 · pp. 25–30 Read article
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Utilization of Power in Street Lights using PWM Technology
Abstract: The important consideration in the present field of electronics and related technologies are automation, power consumption and cost effectiveness. Automation is intended to reduce manpower with the help of intelligent systems. Power saving is the main consideration forever as the sources of the power (thermal, hydro etc.) are getting diminished due to various reasons. The power saving part in this project is that LEDs are used instead of helium bulbs …
Published in Journal of Semiconductor Devices and Circuits · Vol. 2, Issue 3, 2015 · pp. 31–35 Read article
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Microhardness of II-VI and III-V Semiconductors
Abstract: A correlation between microhardness and bond hardness of II-VI and III-V semiconductors is presented in this study. Bond hardness is calculated using valence electron number, covalent / ionic radius and co-ordination number of bonded atoms of the tetrahedral semiconductors. The covalent and ionic contributions to bond hardness are separately calculated to get resultant bond hardness. Results obtained using the correlation agrees well with the reported, experimental and theoretical values of …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 31–36 Read article
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Design and Performance of Semiconductor-Biosensor
Abstract: In this work, a high electron mobility transistor (HEMT) based biosensor is designed to detect the virus-protein. In this work, all the simulation-studies are carried out in the SILVACO-ATLAS physical simulator using the following models: Shockley Read Hall (SRH), band gap narrowing, Auger recombination, and Fermi Dirac statistics. Newton trap numerical solver is used in the device simulation. Conduction band engineering of the biosensor is studied. DC and RF properties …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 1–13 Read article
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DC and RF Analysis on Specific Quantum-Well Heterostructures
Abstract: Polarization-graded AlGaN back-barrier nano-layer is introduced in high electron mobility transistor (HEMT) structure to have an improved drain current characteristics and better radio-frequency performance, using two-dimensional drift-diffusion simulation by SILVACO-ATLAS physical simulator. In this work, the AlGaN/AlN/GaN/AlGaN/GaN double heterojunction HEMT structure is optimised with graded back barrier layer to study the DC and RF performances. Investigation of this structure with graded back barrier layer is the novelty of this work. …
Published in Journal of Semiconductor Devices and Circuits · Vol. 9, Issue 1, 2022 · pp. 1–13 Read article
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The Emerging Technologies in the Field of Semiconductors Along with the Use of the System on Chip
Abstract: An entire electronic or computer system can be combined onto a single platform using a system on chip, which is effectively an integrated circuit. The primary objectives underlying the development of this system on chip are to decrease energy waste, cut costs, and decrease the area occupied by massive systems. Students can understand and experience many methods utilised at each level of the design hierarchy using this strategy. The expansion …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 1, 2024 · pp. 8–15 Read article
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Structural and Elasto-Mechanical Properties of Half Heusler Alloy CoHfBi as Ferromagnetic Semiconductor
Abstract: Herein, we have explored Half Heusler Alloy CoHfBi under the density functional theory is simulated using the Wein2k package. The structural characterization we had done in two different phases, i.e., spin polarised, and non-spin polarised which suggests that the CoHfBi alloy stable in spin polarised phase in Y2 type structure. Ab-Initio calculations are helpful to examine the dependence of the global properties of Heusler alloys on atomic composition and crystal …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 2, 2024 · pp. 20–25 Read article
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Enhanced Photovoltaic Performance of Perovskite Solar Cell Using Copper Thiocyanate (CuSCN) as Hole Transport Layer
Abstract: In this study, the SCAPS tool was utilized to examine the efficacy of perovskite solar cells using perovskite materials such methyl ammonium lead Iodide (MAPbX3, MA=CH3NH3, X: I). Quantitative simulation and modeling have been used to determine the electrical characteristics of the MAPbI3 material used for the active layer for a number of parameters, including fill factor (FF), short-circuit current density (Jsc), power conversion rate (PCE), and open-circuit voltage (Voc). …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 3, 2024 · pp. 12–18 Read article