STM Journals Peer-reviewed research from Consortium e-Learning Network

Journal of VLSI Design Tools and Technology

Analysis of VLSI Circuits Designed with Single and Dual Channel Strained Silicon MOSFETs in Nanoregime

  1. neha sharan
  2. ashwani rana

Abstract

In this paper, performance of the VLSI circuits designed with strained silicon MOSFETs is analysed andcompared with bulk MOSFET. Emphasis is being given on the evaluation of speed, power and noisecharacteristics. An inverter circuit designed with single channel and dual channel biaxial strained MOSFETsof 40 nm channel length and 0.3 germanium mole-fraction is being taken to evaluate the performance throughsimulation. The device design and circuit simulation is done in Sentaurus TCAD tool. The designed strainedsilicon MOSFETs shows increased carrier mobility, carrier velocity and drive current than bulk MOSFET.Dual channel biaxial strained MOSFET shows even much better performance than single channel biaxialstrained MOSFET. The inverter circuit designed with this dual channel biaxial strained silicon MOSFETsshows much lesser delay and power consumption as compared to circuit designed with single channel strainedMOSFET and bulk MOSFETs. Thus, the circuits designed with strained silicon MOSFETs are preferred indigital applications for low power and high speed circuits.Keywords: Biaxial single channel strained MOSFET, Biaxial dual channel strained MOSFET, Carriermobility, Carrier velocity, Compressive strain, Delay, Inverter, Noise Margin, Tensile strain
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