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Analysis of VLSI Circuits Designed with Single and Dual Channel Strained Silicon MOSFETs in NanoregimeBy neha sharan, ashwani rana
Abstract: In this paper, performance of the VLSI circuits designed with strained silicon MOSFETs is analysed andcompared with bulk MOSFET. Emphasis is being given on the evaluation of speed, power and noisecharacteristics. An inverter circuit designed with single channel and dual channel biaxial strained MOSFETsof 40 nm channel length and 0.3 germanium mole-fraction is being taken to evaluate the performance throughsimulation. The device design and circuit simulation is done in Sentaurus …
Published in Journal of VLSI Design Tools and Technology · Vol. 1, Issue 1-2-3, 2011 · pp. 15–20 Read article →