Design, Verification and Circuit Level Implementation of a Ballistic MOSFET

Arun Kumar Chatterjee; B. Prasad

doi:10.37591/jovdtt.v8i3.1201

Abstract

A drain current expression is obtained for a nanoscale ballistic MOSFET within the framework of Landauer-Buttiker formalism considering intrinsic silicon channel at low temperature. The model drain current is compared with the numerical simulations of near ballistic nanoMOSFET structure. There is a reasonable agreement between the model and the numerical simulation results. This demonstrates the remarkably low value of the subthreshold slope of ballistic nanoMOSFET. Further, the design structure is incorporated in an inverter circuit which works well verifying its functionality in the integrated circuits.Keywords: Ballistic MOSFET, charge density, triangular potential well, wave function, drain currentCite this ArticleArun Kumar Chatterjee, Prasad B. Design, Verification and Circuit Level Implementation of a Ballistic MOSFET. Journal of VLSI Design Tools & Technology. 2018; 8(3): 15–22p.