1 publication

• Published Subscription 3 Dec 2018

  Design, Verification and Circuit Level Implementation of a Ballistic MOSFET

  By Arun Kumar Chatterjee, B. Prasad

  Abstract: A drain current expression is obtained for a nanoscale ballistic MOSFET within the framework of Landauer-Buttiker formalism considering intrinsic silicon channel at low temperature. The model drain current is compared with the numerical simulations of near ballistic nanoMOSFET structure. There is a reasonable agreement between the model and the numerical simulation results. This demonstrates the remarkably low value of the subthreshold slope of ballistic nanoMOSFET. Further, the design structure is …

  Published in Journal of VLSI Design Tools and Technology · Vol. 8, Issue 3, 2018 · pp. 15–22 Read article →