STM Journals Peer-reviewed research from Consortium e-Learning Network

Journal of Semiconductor Devices and Circuits

Microhardness of II-VI and III-V Semiconductors

  1. Mritunjai Kr. Pathak
  2. Madhu Sudan Dutta
  3. Paramanand Mahto
  4. Rajendra Nath Sinha
  5. Ashok Kumar Gupta

Abstract

A correlation between microhardness and bond hardness of II-VI and III-V semiconductors is presented in this study. Bond hardness is calculated using valence electron number, covalent / ionic radius and co-ordination number of bonded atoms of the tetrahedral semiconductors. The covalent and ionic contributions to bond hardness are separately calculated to get resultant bond hardness. Results obtained using the correlation agrees well with the reported, experimental and theoretical values of other researchers.

Keywords

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