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    Microhardness of II-VI and III-V Semiconductors

    Abstract: A correlation between microhardness and bond hardness of II-VI and III-V semiconductors is presented in this study. Bond hardness is calculated using valence electron number, covalent / ionic radius and co-ordination number of bonded atoms of the tetrahedral semiconductors. The covalent and ionic contributions to bond hardness are separately calculated to get resultant bond hardness. Results obtained using the correlation agrees well with the reported, experimental and theoretical values of …

    Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 1, 2021 · pp. 31–36 Read article

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