STM Journals Peer-reviewed research from Consortium e-Learning Network

Journal of Semiconductor Devices and Circuits

Fundamental Concepts and Applications of High Electron Mobility Transistors (HEMTs): A Qualitative Review

  1. Servin Rathi
  2. Gil-Ho Kim

Abstract

A brief qualitative review of the modulation doped field effect transistors (MODFETs), also known as High Electron Mobility Transistors (HEMTs) is provided here. The prominent features of this review include detailed discussion on the role of various layers and comparison between various HEMTs structures. Emphasis has been given to offer a complete overview of the various aspects of HEMT devices, from fabrication to applications, in a synergetic manner.
Support