STM Journals Peer-reviewed research from Consortium e-Learning Network

Journal of Semiconductor Devices and Circuits

Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET

  1. kunal kumar

Abstract

We carry out the performance of symmetric oxide (HfO2+HfO2) and asymmetric oxide (SiO2+HfO2) n-type junction less field-effect transistor (JLFET) based on two- dimensional Poisson equation. This study is accomplished by simulating a symmetric and asymmetric double gate JLFET on Sentaurus, Technology Computer Aided Design (TCAD) simulator for Silicon (Si) material at room temperature and varying temperature in between 300-360 k.Based on device simulation we find that the asymmetric oxide shows preferable performance in terms of ON-state current (ION), subthreshold swing(SS), the ION/IOFF ratios (~107) and the equivalent oxide thickness (EOT) compared to symmetric devices and also asymmetric oxide technology enhances the performance and reduces the power consumptions.

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