2 publications

• Published Subscription 1 Jan 2022

  A simulation based study of Capacitor-less Low-Dropout Regulator (LDO)

  By kunal kumar

  Abstract: Low-dropout (LDO) regulators have become an essential part of IC design for managing power consumption, this used large capacitors which increases the pin count and also occupies more space in chip. As the order of electronics items increses the the demand of LDO also increases.This is used used with switching regulators to defeat the value of noise and various unwanted signals and provided a low noise output In this work …

  Published in Journal of Microelectronics and Solid State Devices · Vol. 8, Issue 3, 2021 · pp. 11–15 Read article →

• Published Subscription 28 Oct 2021

  Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET

  By kunal kumar

  Abstract: We carry out the performance of symmetric oxide (HfO2+HfO2) and asymmetric oxide (SiO2+HfO2) n-type junction less field-effect transistor (JLFET) based on two- dimensional Poisson equation. This study is accomplished by simulating a symmetric and asymmetric double gate JLFET on Sentaurus, Technology Computer Aided Design (TCAD) simulator for Silicon (Si) material at room temperature and varying temperature in between 300-360 k.Based on device simulation we find that the asymmetric oxide shows …

  Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 14–20 Read article →