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3 articles for “read and write margins”
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Development of Polymer Based SRAM Cell with Enhance Low Power Performance
Abstract: Low-power memory technologies are in high demand with the rapid growth of portable electronics and energy-efficient computing systems. Static random-access memory (SRAM) plays a crucial role in processors, cache memories, and system-on-chip applications due to their speed and reliability. Static Random Access Memory (SRAM) is typically implemented using complementary MOS (CMOS) technology, which integrates both PMOS (P-channel Metal–Oxide–Semiconductor) and NMOS (N-channel Metal–Oxide–Semiconductor) transistors. However, as technology scales to deep submicron …
Published in Journal of Polymer & Composites · Vol. 14, Issue 1, 2026 · pp. 1439–1448 Read article
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Performance and Analysis of 6T, 8T & 10T SRAM Cell in 28nm Technology
Abstract: Technology scaling into deep sub-micron regimes has significantly increased the design challenges of Static Random Access Memory (SRAM), particularly at the 28 nm technology node. As transistor dimensions shrink, SRAM cells become more vulnerable to stability degradation, leakage current, process variations, and reduced noise margins, which adversely affect overall memory performance and reliability. The conventional 6T SRAM cell remains widely used due to its compact structure and high storage density; …
Published in Journal of VLSI Design Tools and Technology · Vol. 16, Issue 2, 2026 Read article
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Psychological Trauma Reflected in B.Rangarao’s Dalit Short Story Death of a Rich Man
Abstract: In the growing expansion of marginalized literature, B.Rangarao’s short story collection “Desperate Men and Women: Ten Dalit Short Stories from India” has been greatly applauded by the readers as it brilliantly exposed the trauma of both men and women of Dalit community in autocratic conditions in India. In Dalit writing Rangrao’s contribution gave fresh look especially to the short story genre as it is based on the revolutionary ideas of …
Published in Emerging Trends in Languages · Vol. 1, Issue 1, 2024 · pp. 01–07 Read article