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1 article for “multi node soft error”
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Design And Validation of High Efficiency Of 10T Sram with High Recoverability Of Multi Node Soft Error
Abstract: Sensitive nodes' critical charge is decreasing, which increases the soft-error vulnerability of SRAM cells used in aerospace applications. A single event upset (SEU) occurs when a radiation particle hits a sensitive node in a typical 6T SRAM cell, flipping the data that has been stored in the cell. Consequently, a Soft-Error-Aware Read-Stability-Enhanced Low Power 10T (SARP10T) SRAM cell is suggested in this project to reduce SEUs. The quadro cell exhibits …
Published in Journal of Semiconductor Devices and Circuits · Vol. 10, Issue 2, 2024 · pp. 7–14 Read article