Search
5 articles for “halo doping”
-
Exploring the Luminescent Behavior of Dysprosium-Doped Halo-sulphate Compounds
Abstract: In essence, this study aims toward understanding the photo-luminescent properties of Dy³⁺ halogenated sulfates, viz., synthesis, characterization, and luminescent behavior of the materials. Dysprosium ions are introduced into the halo-sulfate matrices to investigate their suitability for solid-state lighting applications. The aim of the study is to explain the mechanisms of the photo luminescence of Dy³⁺ and study the influence of the doping concentration on luminescence efficiency and the thermal stability …
Published in Journal of Materials & Metallurgical Engineering · Vol. 15, Issue 3, 2025 · pp. 01–06 Read article
-
A Two-Dimensional (2D) Analytical Model for Channel Potential and Threshold Voltage of Short Channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET
Abstract: In the present paper, an analytical model for the channel potential of short channel Triple Material Gate-Double Halo (TMG-DH) DG MOSFET has been presented using parabolic approximation method. Further, the threshold voltage of the device has been calculated using minimum mid channel potential and the result obtained has been compared with the threshold voltage of Triple Material double gate (TMDG) MOSFET in order to show the improvement in the threshold …
Published in Journal of Microelectronics and Solid State Devices · Vol. 6, Issue 2, 2019 · pp. 13–25 Read article
-
Simulation of Threshold Voltage Variation of Enhancement Mode n-channel MOSFET
Abstract: AbstractThe paper focuses on simulation of variation of threshold voltage as a function of effective channel length of the short-channel MOSFETs with a Gaussian-like doping profile. An investigation of short channel effect (SCE) in deep submicron region has been carried out. The validity of the proposed simulation is shown by comparing the results with the numerical calculation and simulation of data obtained by using the commercially available simulation software. Finally, …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 34–40 Read article
-
Effect of Various Parameters on Threshold Voltage of Virtually Fabricated Lightly Doped PMOS Device
Abstract: This paper emphasis on the design, fabrication and analysis of 45 nm P type MOSFET device using SILVACO TCAD tool. The analysis was based on variation of various parameters like oxide thickness, threshold implant and halo implant (pockets) to analyze the threshold voltage. The drain versus gate and drain versus gate plots are being plotted using tony-plot. It has been observed that as the thickness of the oxide increases, threshold …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 3, 2017 · pp. 13–20 Read article
-
Effect of Various Parameters on Threshold Voltage of Virtually Fabricated Lightly Doped PMOS Device
Abstract: This paper emphasis on the design, fabrication and analysis of 45 nm P type MOSFET device using SILVACO TCAD tool. The analysis was based on variation of various parameters like oxide thickness, threshold implant and halo implant (pockets) to analyze the threshold voltage. The drain versus gate and drain versus gate plots are being plotted using tony-plot. It has been observed that as the thickness of the oxide increases, threshold …
Published in Journal of VLSI Design Tools and Technology · Vol. 7, Issue 2, 2017 · pp. 13–20 Read article