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4 articles for “TCAD modelling”
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Performance Analysis of Dual Junction Solar Cell Devices utilizing Subcells of In0.51Ga0.49P and GaAs to Study Key Solar Cell Parameters via TCAD based Simulation
Abstract: In the present work, a multi-junction solar cell was designed to obtain better performance over single-junction solar cells. The proposed structure is composed of different layers of diverse semiconductor materials stacked on each other. Here, an In0.51Ga0.49P/GaAs double-junction solar cell was outlined as having a distinctive composite material (GaAs) as the tunneling junction. To optimize the solar cell's effectiveness, In0.47Ga0.15Al0.37P was used in the window layer and the back-surface field …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 829–837 Read article
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Comparative Study of Drain Current of Symmetric and Asymmetric DG-MOSFET with Simulation in Silvaco TCAD Software
Abstract: One of the most attractive and promising devices for the nanoscale devices is the double gate MOSFET. The double gate MOSFET can control the Si channel very efficiently and it chooses a very small width of the Si channel. It controls the Si channel by applying gate contact to either side of the channel. The idea of controlling the S channel in such a way reduces the short channel effects …
Published in Journal of Semiconductor Devices and Circuits Read article
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Fabrication, Numerical Simulation and Compact Modeling of Ph-BTBT-C10 Organic Thin Film Transistor
Abstract: Flexible and cost-effective electronics have been necessitated by the advent of organic thin-film transistors (OTFTs). This study aims to study the performance of OTFT using a 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C10) organic semiconductor. The paper also explore accurate device modeling for technology optimization and circuit design that supports device improvement. This research includes device fabrication, numerical simulation using TCAD, compact modeling, and parameter extraction. By combining temperature-dependent bandgap narrowing with existing theories, this …
Published in Journal of Polymer & Composites · Vol. 12, Issue 5, 2024 · pp. 1–18 Read article
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article