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2 articles for “SG-SOI”
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Optimization of Power in SG-SOI Structure at 1550 nm for Nanophotonic Application
Abstract: AbstractOptical power of semiconductor grating silicon-on-insulator (SG-SOI) at 1550 nm is investigated in this paper. The power of SG-SOI structure is calculated using plane wave expansion (PWE) method. Simulation result reveals that optical power is more than 99.9% in all SG-SOI structure. Simulation result shows that suitable combinations of grating layers play vital role to obtain high optical power.Keywords: SG-SOI, PWE, power
Published in Trends in Opto-electro & Optical Communication · Vol. 3, Issue 2, 2013 · pp. 22–24 Read article
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Understanding of optical power in semiconductor based SOI Structure at the signal 1550 nm
Abstract: A silicon-on-insulator (SOI) structure consists of a single crystalline silicon layer separated from the bulk substrate by a thin insulator layer. The insulator in SOI wafers is usually always a thermal silicon oxide (SiO2) layer, with a silicon wafer as the substrate. The silicon sheet can be very thin (50 nm for fully depleted transistors) or tens of micrometres thick, depending on the application. Similarly, the thickness of buried oxide …
Published in Trends in Opto-electro & Optical Communication · Vol. 12, Issue 1, 2022 · pp. 19–23 Read article