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5 articles for “Nanoscale Transistors”
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Next-Generation Semiconductors: Making AI, 5G, and More Possible
Abstract: The current digital environment is being reshaped by next-generation semiconductors, which are powering revolutionary technologies including enhanced computing systems, 5G connectivity, and artificial intelligence. Next-generation semiconductors are at the heart of new technologies that are changing the world we live in today, such as artificial intelligence (AI), 5G communication, and advanced computer systems. As traditional silicon-based designs reach their limits in terms of size and performance, new materials, architectures, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 1, 2026 Read article
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Nanoelectronics Based on Carbon Nanotubes
Abstract: Nanoelectronics, the study and application of electronic components and systems at the nanometer scale, plays a pivotal role in advancing modern technology toward faster, smaller, and more energy-efficient devices. Among the various nanomaterials explored for these applications, carbon nanotubes (CNTs) have emerged as one of the most promising candidates due to their exceptional electrical conductivity, mechanical strength, and thermal stability. This project report presents an in-depth exploration of the role …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 15, Issue 3, 2025 · pp. 40–53 Read article
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An Overview on MOSFET based Sensor Design
Abstract: In the past two decades the MOSFET has transformed from a simple switch in digital logic to an analog powerhouse that can be cofabricated with the sensing material on a single chip. MetalOxideSemiconductor FieldEffect Transistors (MOSFETs) have silently become the beating heart of modern sensor platforms, translating the faint whispers of physical, chemical, and biological phenomena into robust electrical signatures. This abstract surveys the latest advances that have turned the …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 20–26 Read article
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
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A Study on Polymer-Based FinFET Applications and Logic Circuit Implementation with FinFET
Abstract: Nano devices play a crucial role in the semiconductor industry and can work as the solution for the problems like scaling of MOSFET. The FinFET can serve as the substitute of bulk CMOS in nanoscale. It mainly consists of two gate terminals which can be either shorted or kept independent.The shorted gate (SG-FinFET) configuration provides higher Ion and Ioff whereas the Independent Gate (IG-FinFET) configuration reduces the transistor count and …
Published in Journal of Polymer & Composites · Vol. 13, Issue 1, 2025 · pp. 312–340 Read article