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6 articles for “Gallium Nitride (GaN)”
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The Comprehensive Study of Gallium Nitride (GaN) Semiconductor Technology
Abstract: Silicon is an important material in the field of semiconductors because of its special qualities. It has good semiconductor properties, is affordable, and can be found easily. However, it is becoming clear that silicon-based devices are reaching their limits in terms of what they can do. As a result, the search of alternative materials has been initiated. Gallium Nitride (GaN) is one such material. GaN is a type of semiconductor …
Published in Journal of VLSI Design Tools and Technology · Vol. 13, Issue 2, 2023 · pp. 1–11 Read article
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GaN-based Double Gate MOSFET (DG-MOSFET)
Abstract: AbstractGaN is auspicious for high-power, high-temperature devices because of its large bandgap, and high saturation velocity compared with Si. Gallium nitride (GaN) based devices are expected to play an important role to develop the next-generation devices. The performance of GaN-based double gate (DG) MOSFETs have been explored with gate length (Lg) 10.6 nm. The ON-current (ION) and OFF-current (IOFF) are found to be 8.11´10–3 and 6.38605´10–9A/µm respectively, respectively with an …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 24–28 Read article
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The Next Era of Solid-State Innovation: Beyond Silicon
Abstract: The semiconductor industry is getting close to the physical and economic boundaries of silicon-based technology. A new era of solid-state innovation is beginning. Beyond Silicon: The Next Era of Solid-State Innovation looks at the materials, device layouts, and manufacturing methods that are about to change the way electronics and energy work. The article talks about improvements in wide- and ultra-wide-bandgap semiconductors, two- dimensional materials, and quantum and neuromorphic systems that …
Published in International Journal of Solid State Innovations & Research · Vol. 3, Issue 2, 2025 · pp. 19–23 Read article
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Recent Innovations in Semiconductor Materials for Smart Electronic Devices
Abstract: Recent advancements in semiconductor materials have significantly transformed the design, performance, and functionality of smart electronic devices such as smartphones, wearable systems, IoT devices, autonomous systems, and biomedical electronics. With the continuous demand for higher processing speed, lower power consumption, improved thermal stability, and extreme miniaturization, traditional silicon-based semiconductor technology is facing major limitations. As device dimensions shrink to the nanometer scale, challenges such as leakage current, heat dissipation, and …
Published in Journal of Semiconductor Devices and Circuits · Vol. 13, Issue 2, 2026 · pp. 1–11 Read article
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Solid State Technology Reinvents Microwave Heating
Abstract: Since magnetrons first came into widespread commercial use in microwave ovens in the early 1970s solid state technology has evolved relatively slowly to be used in industrial heating, consumer cooking, drying, automotive applications etc. Recently, RF energy utilizing solid state devices has appeared in the market as a viable replacement for magnetrons as the heating engine. This route offers many advantages like better energy direction control, longer life, enhanced reliability, …
Published in Journal of Microelectronics and Solid State Devices · Vol. 9, Issue 1, 2022 · pp. 6–15 Read article
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Gallium Nitride based HEMTs in Nano-Scale Regime
Abstract: AbstractIn this work, a maximum drain current of 557 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length. The drain current is observed as higher at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer. Again, the drain current is higher at larger doping …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 11–21 Read article