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4 articles for “Equivalent Oxide Thickness (EOT).”
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Performance Analysis of Junctionless SONOS Memory
Abstract: AbstractThis paper presents the performance analysis of the JL SONOS device electrical characteristics of the two different types of device i.e., one built on BULK substrate and other over the SOI substrate. The difference in the properties and its related impact on the device performance will be discussed through physical interpretations and mathematical equations. Simulation of both devices is done by taking same device dimension and parameter to check the …
Published in Journal of Operating Systems Development & Trends · Vol. 7, Issue 3, 2020 · pp. 25–31 Read article
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Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET
Abstract: we carry out the performance of symmetric oxide (HfO2+HfO2) and asymmetric oxide (SiO2+HfO2) n-type junction less field-effect transistor (JLFET) based on two- dimensional Poisson equation. This study is accomplished by simulating a symmetric and asymmetric double gate JLFET on Sentaurus, Technology Computer Aided Design (TCAD) simulator for Silicon (Si) material at room temperature and varying temperature in between 300-360 k. Based on device simulation we find that the asymmetric oxide …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 4, 2021 · pp. 14–20 Read article
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Machine Learning Assisted Optimization of Nanoscale MOSFET Parameters Using TCAD Simulation
Abstract: This paper presents a machine learning (ML) assisted framework for the multi-objective optimization of nanoscale bulk n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with a 10 nm physical gate length, high-k HfO₂ gate dielectric, and TiN metal gate. Technology computer-aided design (TCAD) simulations employing drift-diffusion transport, Shockley-Read-Hall recombination, Lombardi mobility degradation, and density- gradient quantum correction models are used to generate a parametric dataset of 2,400 device configurations spanning gate length (L), …
Published in Journal of Microelectronics and Solid State Devices · Vol. 13, Issue 1, 2026 · pp. 10–19 Read article
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Comparative Study of Symmetric and Asymmetric Oxide Double Gate Junction less FET
Abstract: We carry out the performance of symmetric oxide (HfO2+HfO2) and asymmetric oxide (SiO2+HfO2) n-type junction less field-effect transistor (JLFET) based on two- dimensional Poisson equation. This study is accomplished by simulating a symmetric and asymmetric double gate JLFET on Sentaurus, Technology Computer Aided Design (TCAD) simulator for Silicon (Si) material at room temperature and varying temperature in between 300-360 k.Based on device simulation we find that the asymmetric oxide shows …
Published in Journal of Semiconductor Devices and Circuits · Vol. 8, Issue 2, 2021 · pp. 14–20 Read article