Search
6 articles for “Aluminium nitride”
-
Boron Nitride Nanoplatelets and Aluminium Nitride Incorporated Organic Organic Eutectic Phase Change Materials with Enhanced Thermal Conductivity with Low-Loading Nanoadditives
Abstract: Miniaturized high performance electronic appliances generate tremendous heat during the duty cycle, has led research community to explore advanced thermal management strategies. Operating electronics at high temperature may result in malfunctioning of compact appliances. Thus, phase change materials (PCM) are applied to maintain isothermal temperature by implementing phase transition through latent heat. To improve the thermal conductivity and to deduce at suitable phase transition temperature of novel eutectic PCM, nanoplatelets …
Published in Journal of Polymer & Composites · Vol. 12, Issue 2, 2024 · pp. 1–9 Read article
-
Effect of Aluminium Nitride Layer on the Electrical Performance of Microelectronic HEMTs
Abstract: AbstractIn this simulation work, a series of simulation outputs are reported related to the AlGaN/GaN single-heterojunction high electron mobility transistors (HEMTs). The effect of aluminium nitride nucleation layer on the drain characteristics is significant in single-heterojunction AlGaN/GaN HEMTs. The effects of drain voltage and gate voltage on the drain current are studied in the designed and simulated device structures. This simulation work may be a useful prediction to fabricate the …
Published in Journal of Microelectronics and Solid State Devices · Vol. 4, Issue 3, 2017 · pp. 9–12 Read article
-
Synergistic effect of AlN and 2D-BN Nanoplatelets on Phase Transition Kinetics and Thermal Transport of Eutectic Phase Change Materials
Abstract: High-power-density electronic appliances are in demand to meet the necessity from modern sustainable society. The heat generated with the continuous functioning need to be dissipated to keep electronics cool to retain efficiency and performance. To suppress heat accumulation, surplus heat needs to be controlled by adapting efficient cooling technologies. As an alternative, nanomaterials-enabled phase change materials (PCM)-based cooling is appropriate to curb temperature shoot. This work focuses on developing eutectic …
Published in Journal of Polymer & Composites · Vol. 12, Issue 1, 2024 · pp. 11–16 Read article
-
Investigating the Mechanical Properties and Microstructure of AA 7074 Composites with Silicon Nitride Reinforcement
Abstract: This study investigates the mechanical and microstructural properties of AA 7074 aluminium alloy reinforced with 1%, 3%, and 5% by weight of silicon nitride (Si₃N₄), fabricated via the stir casting method, intended for structural aerospace applications. A thorough series of mechanical tests—comprising tensile, compression, hardness, impact, flexural, and wear tests—was performed to assess the influence of differing reinforcing content. The composite containing 5 wt% Si₃N₄ (SN5) demonstrated the most pronounced …
Published in Journal of Polymer & Composites · Vol. 14, Issue 3, 2026 · pp. 268–281 Read article
-
Gallium Nitride based HEMTs in Nano-Scale Regime
Abstract: AbstractIn this work, a maximum drain current of 557 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length. The drain current is observed as higher at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer. Again, the drain current is higher at larger doping …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 11–21 Read article
-
Studies on the Variations of Drain Current in Gallium Nitride based High Electron Mobility Transistors
Abstract: AbstractIn this work, total 2477 individual simulation outputs are reported. Variations in drain current with respect to the electrical parameters (drain voltage and gate voltage) and structural parameters of high electron mobility transistors (HEMTs) have been studied. The drain current is higher corresponding to larger aluminium mole fraction. This study will be useful to fabricate the HEMT based biomedical sensors.Keywords: Drain current, drain voltage, gate voltage, high electron mobility transistorCite …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 13–24 Read article