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10 articles for “Aluminium mole fraction”
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Novel Characteristics of GaN based Nanoelectronic Double-Heterojunction HEMTs to Establish a Solid-State-Electronics Laboratory
Abstract: The drain characteristics are investigated with respect to electrical variables (drain voltage, gate voltage) and structural parameters of high electron mobility transistors (HEMTs). Total 10526 individual simulation-outputs are reported in this work. The maximum drain current of 553 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is higher at shorter gate length. The drain current is higher at larger aluminium …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 3, 2017 · pp. 11–20 Read article
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Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
Abstract: AbstractA maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction AlGaN/GaN/AlGaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool in this work. The drain current is observed as higher at shorter gate length. The drain current is found as higher at larger aluminium mole fraction. Also, the drain current is found as higher at larger thickness of AlGaN barrier layer. The drain current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 7–17 Read article
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Electrical Characteristics of Nanoelectronic Double-Heterojunction High Electron Mobility Transistors
Abstract: AbstractIn this work, a maximum drain current of 554 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length and at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer and at larger doping concentration of AlGaN barrier layer.In this work, the formation of 2-DEG …
Published in Journal of Semiconductor Devices and Circuits · Vol. 7, Issue 1, 2020 · pp. 18–28 Read article
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Gallium Nitride based HEMTs in Nano-Scale Regime
Abstract: AbstractIn this work, a maximum drain current of 557 mA is achieved by the simulated structures of double-heterojunction HEMTs using the SILVACO-ATLAS software tool. The drain current is found to be higher at shorter gate length. The drain current is observed as higher at larger aluminium mole fraction. The drain current is also higher at larger thickness of AlGaN barrier layer. Again, the drain current is higher at larger doping …
Published in Journal of Microelectronics and Solid State Devices · Vol. 5, Issue 3, 2018 · pp. 11–21 Read article
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Studies on the DC Characteristics of Nanoelectronic Single-Heterojunction GaN based HEMTs with AlGaN Layer of 22 nm
Abstract: AbstractIn this work, total 2367 individual simulation-outputs are reported. We have studied the drain characteristics in AlGaN/GaN high electron mobility transistors (HEMTs) having the AlGaN thickness of 22 nm. According to this study, the drain current increases with drain voltage. Also, the drain current increases with gate voltage. The drain current is observed as higher at larger aluminium mole fraction. Also, the drain current is higher at larger doping concentration. …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 1–12 Read article
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Studies on the Variations of Drain Current in Gallium Nitride based High Electron Mobility Transistors
Abstract: AbstractIn this work, total 2477 individual simulation outputs are reported. Variations in drain current with respect to the electrical parameters (drain voltage and gate voltage) and structural parameters of high electron mobility transistors (HEMTs) have been studied. The drain current is higher corresponding to larger aluminium mole fraction. This study will be useful to fabricate the HEMT based biomedical sensors.Keywords: Drain current, drain voltage, gate voltage, high electron mobility transistorCite …
Published in Journal of Microwave Engineering and Technologies · Vol. 5, Issue 1, 2018 · pp. 13–24 Read article
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Simulation Studies on the Drain Characteristics of Microelectronic AlGaN/GaN HEMTs Corresponding to the 30 nm of AlGaN Nano-Layer
Abstract: AbstractIn this work, the simulation studies are performed on high electron mobility transistor (HEMT) structures using the SILVACO-ATLAS software tool. The drain characteristics of HEMT structures is investigated with respect to the Aluminium mole fraction, drain voltage, gate voltage, and gate length at 30 nm thickness of AlGaN nano-layer. The simulation studies on the effect of gate length to control the drain characteristics are a novelty of this work. The …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 1, 2017 · pp. 8–16 Read article
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Report on the Novel Electrical Characteristics of Microelectronic High Electron Mobility Transistors to Establish a Low-Cost Microelectronics Laboratory in the National Institute of Technology Arunachal Pradesh
Abstract: AbstractIn this work, total 22584 individual simulation-outputs are reported according to the performed simulation-studies on the microelectronic AlGaN/GaN high electron mobility transistors (HEMTs). This series of simulation work has been performed using the SILVACO-ATLAS software tool on the basis of already established theories related to the semiconductor-physics of HEMTs. In this work, the drain characteristics are investigated with respect to the aluminium mole fraction, drain voltage, gate voltage, gate length …
Published in Journal of Semiconductor Devices and Circuits · Vol. 4, Issue 2, 2017 · pp. 6–28 Read article
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Variations of Source Current in the Double-Heterojunction HEMTs
Abstract: AbstractIn this report, we have studied the variations in source current with respect to drain voltage corresponding to the double heterojunction (DH) high electron mobility transistors (HEMTs). Also, the effects of gate voltage and aluminium mole fractions on source current are studied. In this work, the highest source current achieved is 3.3 mA. This work may be useful to design many nanoelectronic HEMTs.Keywords: Source current, drain voltage, gate voltage, mole …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 19–24 Read article
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Studies on the Electrical Characteristics of AlGaAs/GaAs High Electron Mobility Transistors
Abstract: AbstractIn this work, total 5722 individual simulation outputs are reported. The effects of drain voltage, gate voltage, aluminium mole fraction, and gate length on drain current are studied in AlGaAs/GaAs high electron mobility transistors (HEMTs). The linear region and saturation region are prominent in each drain characteristic curve. The drain current reduces in the structure of larger gate length. This work is useful to fabricate the HEMT based biomedical sensors. …
Published in Journal of Thin Films, Coating Science Technology & Application · Vol. 5, Issue 3, 2018 · pp. 30–40 Read article