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33 articles for “Nanoelectronic”
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R-M and M-R Model for Interpreting Logic State of Memristor Aided NOR with Enhanced Noise Margin
Abstract: Memristive crossbar arrays are one of the fascinating subjects in the field of nanoelectronics and memory devices. The arrangement of arrays consists of grid-like structure with rows and columns of memristors which are resistive devices that can preserve their resistance state even after power is turned OFF. They have now emerged as a promising alternative to traditional memory technologies due to their high density, non-volatility and low power consumption. This …
Published in Recent Trends in Mathematics · Vol. 1, Issue 1, 2024 · pp. 35–41 Read article
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Current-Voltage Characteristics of 15-Atom Agnrs and Zcnts at Various Bias Voltages: Insights for Polymer Nanocomposite Applications
Abstract: The present research investigates the electronic properties of 15-atom Armchair Graphene Nanoribbons (AGNRs) and 15-atom Zig-Zag Carbon Nanotubes (ZCNTs) under applied bias voltages of 100, 200, 300, 400, 500, and 600 millivolts. Using the Non-Equilibrium Green's Function (NEGF) technique, the study analyzes various electrical features, including current-voltage (I-V) characteristics, to understand the behavior of these nanostructures. The findings reveal that AGNRs exhibit a larger bandgap than ZCNTs, which have a …
Published in Journal of Polymer & Composites · Vol. 13, Issue 2, 2025 · pp. 135–144 Read article
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Comparison of 11-Atom Armchair Graphene Nanoribbons and Zig-Zag Carbon Nanotubes in Polymer Composites Under Various Bias Voltages: A Study of Electronic and Transmission Properties
Abstract: In this research, 11-atom zig-zag carbon nanotubes (ZCNTs) and 11-atom armchair graphene nanoribbons (AGNRs) were studied under applied bias voltages at 50, 150, and 300 millivolt levels. The focus was on understanding their behaviour concerning transmission qualities, current-voltage (I-V) characteristics, and energy-momentum (E-K) diagrams. The Non-Equilibrium Green's Function (NEGF) approach was employed to analyse various electronic properties for ZCNTs and AGNRs, including transmission, E-K relationships, and I-V characteristics. The results …
Published in Journal of Polymer & Composites · Vol. 13, Issue 2, 2025 · pp. 126–134 Read article
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Optical properties of Carbon quantum dots for AI enhanced flexible bioelectronics and nanomedicine
Abstract: Carbon nanodots are the emerging nanomaterials of 20 th century. Carbon nanodots is the family of carbon based material with distinguished bio-physical properties. In this paper, the optical properties of carbon nanodots are presented. One of the developments Nanoscale physics and nanotechnology is the ability of converting optical signals into meaning full information. This innovation is accelerated and improved by incorporating nanoscale materials including carbon quantum dot, carbon nanotube, and …
Published in International Journal of Photochemistry and Photochemical Research · Vol. 3, Issue 1, 2025 · pp. 19–30 Read article
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Photonic-Assisted Spintronic Solid-State Switching Model for High-Speed Memory Devices
Abstract: The rapid advancement of high-speed computing and data-centric applications has intensified the demand for energy-efficient and ultra-fast memory technologies. This paper proposes a Photonic-Assisted Spintronic Solid-State Switching Model for next-generation high-speed memory devices. The proposed framework integrates photonic excitation mechanisms with spintronic switching dynamics to enhance data transfer speed, minimize switching delay, and reduce power dissipation in solid-state memory architectures. By combining optical pulse-assisted spin polarization with magnetic tunnel junction-based …
Published in International Journal of Solid State Innovations & Research · Vol. 4, Issue 1, 2026 Read article
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Electrical Characteristics of AlGaN/GaN/AlGaN HEMTs
Abstract: AbstractA maximum drain current of 556 mA is achieved by the simulated structures of double-heterojunction AlGaN/GaN/AlGaN high electron mobility transistors (HEMTs) using the SILVACO-ATLAS software tool in this work. The drain current is observed as higher at shorter gate length. The drain current is found as higher at larger aluminium mole fraction. Also, the drain current is found as higher at larger thickness of AlGaN barrier layer. The drain current …
Published in Journal of Semiconductor Devices and Circuits · Vol. 5, Issue 3, 2018 · pp. 7–17 Read article
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Variations of Source Current in the Double-Heterojunction HEMTs
Abstract: AbstractIn this report, we have studied the variations in source current with respect to drain voltage corresponding to the double heterojunction (DH) high electron mobility transistors (HEMTs). Also, the effects of gate voltage and aluminium mole fractions on source current are studied. In this work, the highest source current achieved is 3.3 mA. This work may be useful to design many nanoelectronic HEMTs.Keywords: Source current, drain voltage, gate voltage, mole …
Published in Journal of Semiconductor Devices and Circuits · Vol. 3, Issue 3, 2016 · pp. 19–24 Read article
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Polypyrrole-Based Conductive Polymer-Gated Single Electron Transistor with Deep Neural Network Assistance for Biomedical Energy Harvesting and Charge Detection
Abstract: The increasing demand for intelligent biomedical monitoring systems has accelerated research into ultra-low-power sensing technologies capable of operating with high sensitivity and minimal energy consumption. Conductive polymers have attracted considerable attention for biomedical and nanoelectronic applications due to their tunable electrical properties, biocompatibility, and environmental stability. Among them, Polypyrrole (PPy) is a promising functional polymer that can enhance charge transport and electrostatic coupling in nanoscale devices. In this work, a …
Published in Journal of Polymer & Composites · Vol. 14, Issue 4, 2026 Read article
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Role of Artificial Intelligence in Quantum Materials Research
Abstract: Quantum materials have emerged as a transformative class of advanced materials due to their extraordinary electronic, magnetic, optical, and topological properties governed by quantum mechanical phenomena. These materials are expected to revolutionize next-generation technologies such as quantum computing, spintronics, superconducting electronics, nanoelectronics, intelligent sensing systems, and energy-efficient devices. However, conventional methods for discovering and optimizing quantum materials are often expensive, time-consuming, and computationally intensive because of the enormous complexity of …
Published in Journal of Materials & Metallurgical Engineering · Vol. 16, Issue 2, 2026 · pp. 13–27 Read article
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Spice Circuits for Optic Cellular Receiver Simulations
Abstract: A circuit-theoretic approach to the generation of equivalent circuit models of optoelectronic and integrated photonic receiver applications is presented, especially optical cellular receiver systems. In a conventional circuit, the parameters of nano-inductance, nano-capacitance, impedance and scattering (S) parameters can be effectively applied to the analog equivalent representation of a conventional circuit. In a fiber-optic system, those parameters can be used in an integrated photonics and optoelectronic and nanoelectronic circuit as …
Published in Trends in Opto-electro & Optical Communication · Vol. 16, Issue 2, 2026 Read article
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Fabrication and Characterization of Copper Nanowires: An Overview
Abstract: Copper (Cu) is one of the most important metals in modern electronic technology. Keeping in view its role in nanoelectronics, we have fabricated copper nanowires of diameters 100 and 200 nm using Anodic Alumina and polymer membranes as templates. Template-based growth of copper nanowires has been realized using conventional electro deposition technique in an electrochemical cell designed in our laboratory. Fabrication of copper nanowires is one of the most important …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 1, Issue 1, 2011 · pp. 1–16 Read article
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Review on Number Theory, Quantisation in Physics and Nanotechnology to Invent the Time-Machine in Rocket Engineering
Abstract: In this research-paper, the interdisciplinary-nature of science is demonstrated by highlighting the aspects of nanotechnology in other branches of science and engineering. The domain of semiconductor-nanostructures in nanotechnology including Ghatak-investigations is highlighted. The experimental demonstration of microfluidics in fluid mechanics is provided towards the probable establishment of nanofluidics in future. The theoretical demonstration on high electron mobility transistors is provided towards the experimental establishment of Nanoelectronics in future. Application of …
Published in Journal of Nanoscience, NanoEngineering & Applications · Vol. 10, Issue 3, 2020 · pp. 20–34 Read article
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Synthesis and Characterization of europium doped barium magnesium aluminate (BaMgAl 10 O 17 :Eu 2+ ) and lanthanum yttrium phosphate (LaYPO 4 :Eu 2+ ) nanophosphors
Abstract: Over a decade after adapting the definition and long-term vision for nanotechnology, the programs around the world have achieved remarkable results regarding scientific discoveries that span better understanding of the smallest living structures and functions of matter at the nanoscale. The current scenario of emerging field of luminescent material (phosphor) has a great interest in optoelectronics and solid-state lighting applications for industrial purpose. In the present work, we have reported, …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 23, Issue 2, 2021 · pp. 20–39 Read article