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24 articles for “High electron mobility transistor”
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Metal Oxide Based Thin Film Transistors for Transparent and Flexible Electronics: Critical Review
Abstract: AbstractTransparent and flexible electronics is new emerging research area. Various technologies are available for thin film transistors (TFT). Metal oxide semiconductors are suitable because of their high optical transparency, good electrical performance etc. These devices have advantages of a-Si and organic materials also. Advantages of these devices are low cost, low process complexity and temperature, and large-area scalability and large carrier mobility. In this paper research work is compared. This …
Published in Journal of Electronic Design Technology · Vol. 9, Issue 1, 2018 · pp. 30–40 Read article
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An overview of Nanocrystalline Hydrogenated Silicon Thin film Transistor
Abstract: This article elaborates and comprehends an overview on nc-Si:H TFT's, detailing and highlighting the topics like fabrication methodology, properties/stability, modelling, characterization techniques, challenges and futuristic scope/applications.With the growing demands in commercialization of Solar Cells (low-cost photo voltaic devices), Large Area Displays (like OLED’s), Thin film electronics (FPD applications), pixel switches, wearable/flexible electronics and so on, has prompted researchers to develop nc-Si:H TFT's (an alternative solution) which can out perform the …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 27, Issue 2, 2025 · pp. 1–23 Read article
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Computational Modeling of Polymer Semiconductors for Electronic Applications
Abstract: Polymer semiconductors have become important materials in modern electronic applications because they combine semiconducting behavior with mechanical flexibility, low-cost processing, and tunable molecular structure. Their growing use in organic field-effect transistors, organic photovoltaics, organic light-emitting diodes, and flexible sensing devices has increased the need for accurate computational approaches that can predict material properties and device performance before experimental fabrication. This paper reviews the major computational modeling techniques used for polymer …
Published in Journal of Polymer & Composites · Vol. 14, Issue 3, 2026 · pp. 132–146 Read article
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Influence of Dielectric and Active layer Thickness on MgZnO Thin Film Transistor Electrical Characteristics
Abstract: From last decades, Thin Film Transistors Technology uses low-k dielectric material as an insulator. Insulator thickness plays an important role in device dimension. The insulating layer also known as the gate oxide separates the gate electrode from the channel region of the transistor. If the insulating layer is too thin, there is a greater chance that electrons can tunnel through the oxide layer, leading to leakage current. To mitigate this …
Published in Journal of Polymer & Composites · Vol. 11, Issue 5, 2023 · pp. 17–26 Read article