The complementary metal-oxide semiconductor (CMOS) technology is in an urge requirement of high dielectric material especially at nano level scaling to avoid quantum mechanical tunnelling and leakage current. Hence to optimize the device performance and to compare the conventional SiO2 oxide material with the selected novel high K material (LaAlO3), the SiO2 and LaAlO3 materials are atomically built in the Virtual Nano Lab – Quantum Wise version 12.8.0 software and simulated for current density contour. The simulation results were analyzed and then the synthesis of lanthanum aluminate nanoparticles was done by solution combustion method. The synthesized nano lanthanum aluminate was characterized by X-ray diffractometer (XRD) for crystallite size; and dielectric property was studied by LCR meter. Keywords: current density contour, simulation, LaAlO3, solution-combustion, XRDCite this Article Bikshalu K, Reddy VSK, Manasa MV, et al. Simulation of current density of oxide layer materials & synthesis, characterization of nano lanthanum aluminate and its dielectric analysis. Journal of Nanotrends. 2015; 17(2): 10–14p.
