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Simulation of Current Density of Oxide Layer Materials & Synthesis, Characterization of Nano Lanthanum Aluminate and Its Dielectric AnalysisBy Kalagadda Bikshalu, Keerti Kumar K, B Madhu
Abstract: The complementary metal-oxide semiconductor (CMOS) technology is in an urge requirement of high dielectric material especially at nano level scaling to avoid quantum mechanical tunnelling and leakage current. Hence to optimize the device performance and to compare the conventional SiO2 oxide material with the selected novel high K material (LaAlO3), the SiO2 and LaAlO3 materials are atomically built in the Virtual Nano Lab – Quantum Wise version 12.8.0 software and …
Published in Nano Trends – A Journal of Nano Technology & Its Applications · Vol. 17, Issue 2, 2015 · pp. 10–14 Read article →