Studies of Tin Whisker Formation and Destruction

R. N. Chakraborty; S. Dutta; T. K. Pathak; B. Goswami

Abstract

This article contains whisker growth in current implements considered in electronics packaging. These surface relief growths are said contemporarily to prevent and save devices after Pb abatement. Vacancy flux at crack created from compressive stresses cause mass transfer to guide oxides for direct and control of whiskers. Logical subject to shift mass from equiax to migrating morphologies of equiax such as columns. Criteria from past theories for Sn whisker growth are elevated temperature at relative humidity, residual stress, mechanical force, intermetallic compounds formation and oxide layer. Ni under layer prolongs whisker formation at any temperature, humidity and rated mass transfer. Sn configured whiskers contribute to intermetallic growth rates dependent on exposure state as well as temperature. Sn-Mn alloy shows anomalous whisker formation without favoring compression. In place of trace Pb, Bi has enhanced equiaxed grain morphologies in order to migrate whiskers and indicated healthy applicability for electronics.

Abstract

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